G12-l
Abstract: LSI Logic ASIC g12 High Voltage G12L g12 transistor G12 000
Text: G12 ASIC Cell-Based Product Features/ Benefits Twelfth Generation ASIC Technology • ASIC technology with 0.18 micron L-drawn Overview LSI Logic’s G12 ASIC Cell-Based product, with its three digital libraries, offers unprecedented options for system ASIC designers to optimize their ASIC or
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18-micron
13-micron
B20023
G12-l
LSI Logic ASIC g12
High Voltage G12L
g12 transistor
G12 000
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250 mhz IBM PowerPC Processor
Abstract: IBM PCI Express serdes architecture ibm ASIC SRAM SA-12E IBM ASIC Products ibm ip IBM supports ccga 0.25-um standard cell library IBM ASIC
Text: Standard cell/gate array ASIC for mainstream and cost-sensitive applications SA-12E ASIC Highlights Integration and performance deliver exceptional value. The IBM SA-12E ASIC is a standard 0.25-µm process technology cell and gate array ASIC, featuring a
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SA-12E
SA14-2173-03
250 mhz IBM PowerPC Processor
IBM PCI Express serdes architecture
ibm ASIC SRAM
IBM ASIC Products
ibm ip
IBM supports ccga
0.25-um standard cell library
IBM ASIC
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NEC V30MX
Abstract: 8255a Max mode system in 8086 microprocessor v 12719 40673 71055 Rambus ASIC Cell 40673 cmos marking code C76 verilog code for 8254 timer IC Ensemble
Text: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design SystemTM of NEC. The family allows
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NEC 2933
Abstract: CMOS 5408 a1241 nec V830 mcu transistor 13009 V810 V30MX V830 V851 V853
Text: NEC Electronics Inc. CB-C9VX 3.3-Volt, 0.35-Micron Cell-Based CMOS ASIC Preliminary Description NEC’s CB-C9VX CMOS cell-based ASIC family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex macro functions
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35-Micron
27-micron
A12411EU2V0DS01
NEC 2933
CMOS 5408
a1241
nec V830 mcu
transistor 13009
V810
V30MX
V830
V851
V853
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upd4993
Abstract: f 49055 uPD72103 Z80 PROCESSOR in aerospace 49055 uPD71054 uPD7210 C50T uPD70008 72065B
Text: CB-C8VX/VM 3-Volt, 0.5-Micron Cell-Based CMOS ASIC NEC Electronics Inc. Preliminary April 1996 Figure 1. BGA Package Examples Description NEC's CB-C8VX/VM CMOS cell-based ASIC family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex
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35-micron
A10985EU1V0DS00
upd4993
f 49055
uPD72103
Z80 PROCESSOR in aerospace
49055
uPD71054
uPD7210
C50T
uPD70008
72065B
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CB-C9 macro
Abstract: NZ70008H upd4993 b60c C40C M97C g34c nec 772 uPD71054 22758
Text: NEC Electronics Inc. CB-C9 3.3-Volt, 0.35-Micron Cell-Based CMOS ASIC Preliminary Description June 1996 Figure 1. System-on-Silicon NEC's CB-C9 CMOS cell-based ASIC family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex macrofunctions such as microprocessors, intelligent
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35-Micron
35micron
27-micron
A11272EU1V0DS00
CB-C9 macro
NZ70008H
upd4993
b60c
C40C
M97C
g34c
nec 772
uPD71054
22758
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NEC 2561
Abstract: transistor f422 transistor f423 nec 2561 equivalent transistor f422 equivalent transistor NEC D 882 p verilog code for 8254 timer TBA 931 nec d 882 p datasheet nec 2561 datasheet
Text: CB-C7, 3-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. Preliminary October 1993 Description Figure 1. Integrated HDD Solution with CB-C7 Cell-Based ASIC and Embedded Megafunctions The CB-C7, 3-volt cell-based product family is intended for low power portables and battery-operated products. A
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0.18-um CMOS technology characteristics
Abstract: NEC 71055 NEC V30MX DSPG 71055 STEPS 30175 V30MX VR10000 A1246 CMOS-10
Text: DATA SHEET PRODUCT LETTER CB-C10 2.5 Volt 0.25-Micron CMOS Cell-Based ASIC PRELIMINARY Figure 1. Chip Size Package CSP Description NEC’s 0.25 µm (0.18 µm eff.) CB-C10 family incorporates ultra-high performance, deep submicron cell-based ASIC’s for high-end
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CB-C10
25-Micron
CB-C10
GB-MK14
0.18-um CMOS technology characteristics
NEC 71055
NEC V30MX
DSPG
71055
STEPS 30175
V30MX
VR10000
A1246
CMOS-10
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Untitled
Abstract: No abstract text available
Text: Semicustom Products UTMC Cell-based ASIC Design Methodology Fact Sheet Dec. 1997 FEATURES PRODUCT DESCRIPTION q UTMC’s cell-based design methodology provides flexibility for applications requiring specialized functions and configurations. The cell-based library includes
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SA-27E
Abstract: IBM PCI Express serdes architecture
Text: Standard cell/gate array ASIC for mainstream and cost-sensitive applications requiring fast time-to-market SA-27E ASIC Highlights Integration and performance deliver exceptional value. The IBM SA-27E ASIC is a dense, • Gate delay: 33 picoseconds
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SA-27E
SA14-2183-03
IBM PCI Express serdes architecture
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lvds to eDP
Abstract: qpsk implementation using verilog EDA 2500 manual LSI gigablaze "ASIC Products Databook" vhdl code hamming oak dsp EDP LVDS BZ75 LSI Logic EPBGA
Text: G10 -p Deep Submicron ASIC Technology Datasheet The G10-p cell-based CMOS ASIC technology is the highest performance, highest density 3.3 V product in LSI Logic’s portfolio, and supports consumer, computer, and communications applications. The G10-p ASIC product combined with specialized cores enable optimized
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G10TM-p
G10-p
35-micron
lvds to eDP
qpsk implementation using verilog
EDA 2500 manual
LSI gigablaze
"ASIC Products Databook"
vhdl code hamming
oak dsp
EDP LVDS
BZ75
LSI Logic EPBGA
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8251 usart architecture and interfacing
Abstract: microprocessors interface 8086 to 8251 2-bit half adder verilog code for 8254 timer
Text: GSC200 Series 0.35µ CMOS Standard Cell ASICs Advance Information DS4830 ISSUE 3.1 November 1998 INTRODUCTION The GSC200 standard cell ASIC family from Mitel Semiconductor is a standard cell product combining low power, mixed voltage capability with a very high density
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GSC200
DS4830
8251 usart architecture and interfacing
microprocessors interface 8086 to 8251
2-bit half adder
verilog code for 8254 timer
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2-bit half adder
Abstract: 6402 uart microprocessors interface 8086 to 8251 microprocessors architecture of 8251 USART 8251 interfacing with 8051 microcontroller vhdl source code for 8086 microprocessor 8253 usart programming DAC 8048 8255 interfacing with 8086 82530
Text: GSC200 Series 0.35µ CMOS Standard Cell ASICs Advance Information DS4830 ISSUE 3.1 November 1998 INTRODUCTION The GSC200 standard cell ASIC family from Mitel Semiconductor is a standard cell product combining low power, mixed voltage capability with a very high density
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GSC200
DS4830
2-bit half adder
6402 uart
microprocessors interface 8086 to 8251
microprocessors architecture of 8251
USART 8251 interfacing with 8051 microcontroller
vhdl source code for 8086 microprocessor
8253 usart programming
DAC 8048
8255 interfacing with 8086
82530
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cmos XOR Gates
Abstract: IBM ccga
Text: IBM Microelectronics ASIC 5SE Standard Cell/Gate Array Value ASIC for high function and price-performance applications Highlights • Extensive portfolio of cores for your data processing, communications, and consumer applications • Designs up to 2.8 million gates
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07SA14217401*
SA14-2174-01
cmos XOR Gates
IBM ccga
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2-bit half adder
Abstract: microprocessors architecture of 8251 USART 8251 interfacing with 8051 microcontroller microprocessors interface 8086 to 8251 8255 interfacing with 8086 USART 6402 USART 8251 interfacing "2-bit half adder" 8086 interfacing with 8254 peripheral philips 8251 microprocessor microcontroller
Text: GSC200 Series 0.35µ CMOS Standard Cell ASICs Advance Information DS4830 ISSUE 3.1 November 1998 INTRODUCTION The GSC200 standard cell ASIC family from Mitel Semiconductor is a standard cell product combining low power, mixed voltage capability with a very high density
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GSC200
DS4830
2-bit half adder
microprocessors architecture of 8251
USART 8251 interfacing with 8051 microcontroller
microprocessors interface 8086 to 8251
8255 interfacing with 8086
USART 6402
USART 8251 interfacing
"2-bit half adder"
8086 interfacing with 8254 peripheral
philips 8251 microprocessor microcontroller
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SA-27
Abstract: ibm ASIC SRAM IBM ASIC 0.03 um CMOS technology
Text: ASIC for high performance and high density applications ASIC SA-27 Standard Cell/Gate Array Highlights 0.12 µm effective channel length high performance Designs of up to 12 million gates Copper metallurgy for high performance in sub-quartermicron technology
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SA-27
07SA14217201*
SA14-2172-01
ibm ASIC SRAM
IBM ASIC
0.03 um CMOS technology
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SA-12E
Abstract: SA-27 SA-27E xnor cmos IBM ASIC Products SA-12
Text: Premium ASIC for high performance, high density, and low power applications ASIC SA-12 Standard Cell/Gate Array Highlights 0.18 µm effective channel length high performance Up to 3.4 million wireable gates in production today Optimized for low 2.5 volt operation
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SA-12
07SA14216503*
SA14-2165-03
SA-12E
SA-27
SA-27E
xnor cmos
IBM ASIC Products
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CB-11
Abstract: nec asic product letter nec cb cell product letter
Text: 0.18 µm ASIC Technology CB-11 Cell-based CMOS ICs Product Letter Description NEC’s 0.18 µm CB-11 family incorporates ultra-high performance, deep sub-micron cellbased ASIC’s for high-end applications requiring high speeds, high integration density and
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CB-11
A14226EE2V0PL00
nec asic product letter
nec cb cell product letter
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ibm ASIC SRAM
Abstract: xnor cmos SA-12E ccga IBM IBM ccga
Text: Value ASIC for high function and price-performance applications ASIC SA-12E Standard Cell/Gate Array Highlights Extensive portfolio of cores 0.18 µm effective channel length high performance Designs of up to 10 million gates 0.05 µW/MHz/gate power dissipation
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SA-12E
07SA14217302*
SA14-2173-02
ibm ASIC SRAM
xnor cmos
ccga IBM
IBM ccga
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ibm ASIC SRAM
Abstract: IBM "embedded dram" IBM supports ccga
Text: Standard cell/gate array ASIC for high-function, high-density applications Blue Logic Cu-11 ASIC Highlights 0.11-µm L drawn enables designs of up to 40 million gates Advanced technologies include copper metallurgy and low-k dielectric Choice of packaging options
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Cu-11
07SA14245100*
SA14-2451-00
ibm ASIC SRAM
IBM "embedded dram"
IBM supports ccga
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EDA 2500
Abstract: SR40 OC768 "128 cam" transistor 24 GHz
Text: Product Brief SR40 0.095 µm High-Speed Copper Standard Cell/Gate Array ASIC Speed is of the essence— The explosion in network bandwidth driven by the convergence of voice and data communications requires a specialized ASIC product. Optimized for the high-speed communications
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130-nm
EDA 2500
SR40
OC768
"128 cam"
transistor 24 GHz
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8251a usart interface from z80
Abstract: 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX
Text: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design System of NEC. The family allows
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TMXP-200
L427525
8251a usart interface from z80
72065B
verilog code for 8254 timer
NEC V30MX
Rambus ASIC Cell
OPENCAD CMOS Block library
nec floppy circuit
NEC 71059
NEC 71051
V30MX
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philips V30M
Abstract: No abstract text available
Text: CB-C8VX/VM 3-Volt, 0.5-M icron Cell-Based CMOS ASIC NEC NEC Electronics Inc. April 1996 Preliminary Figure 1. BGA Package Examples Description NEC's CB-C8VX/VM CMOS cell-based ASIC family facilitates the design of complete cell-based silicon system s composed of user-defined logic, complex
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35-micron
b427525
philips V30M
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8251a usart interface from z80
Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn
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L4E75BS
80C42H
D043fl23
8251a usart interface from z80
UDL TM 500
f922
verilog code for 8254 timer
l912
256x32
POWER MODULE TM 31
udl 500
78K3
F5S4
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