ACR300SG33
Abstract: ACR30 ACR300 AN4839 2000V to 3000V diodes
Text: ACR300SG33 ACR300SG33 Fast Turn-on Asymmetric Thyristor Replaces April 2000 version, DS5081-2.2 DS5081-2.4 August 2000 APPLICATIONS • Capacitor Discharge ■ Pulse Power Applications FEATURES ■ The ACR300SG33 is a high voltage asymmetric thyristor which has exceptionally fast turn-on
|
Original
|
ACR300SG33
DS5081-2
ACR300SG33
700ns
ACR30
ACR300
AN4839
2000V to 3000V diodes
|
PDF
|
ACR300SG33
Abstract: No abstract text available
Text: ACR300SG33 ACR300SG33 Fast Turn-on Asymmetric Thyristor Replaces April 2000 version, DS5081-2.2 DS5081-2.4 August 2000 APPLICATIONS • Capacitor Discharge ■ Pulse Power Applications FEATURES ■ The ACR300SG33 is a high voltage asymmetric thyristor which has exceptionally fast turn-on
|
Original
|
ACR300SG33
DS5081-2
ACR300SG33
700ns
|
PDF
|
asymmetric thyristor
Abstract: asymmetric thyristor datasheet Thyristor 470 A acr300 ACR300SG33
Text: ACR300SG33 ACR300SG33 Fast Turn-on Asymmetric Thyristor Replaces April 2000 version, DS5081-2.2 DS5081-2.4 August 2000 APPLICATIONS • Capacitor Discharge ■ Pulse Power Applications FEATURES ■ The ACR300SG33 is a high voltage asymmetric thyristor which has exceptionally fast turn-on
|
Original
|
ACR300SG33
DS5081-2
ACR300SG33
700ns
asymmetric thyristor
asymmetric thyristor datasheet
Thyristor 470 A
acr300
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Electrical Datasheet GA040TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
|
Original
|
GA040TH65-CAU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Electrical Datasheet GA060TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
|
Original
|
GA060TH65-CAU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Electrical Datasheet GA080TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
|
Original
|
GA080TH65-CAU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Electrical Datasheet GA080TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
|
Original
|
GA080TH65-CAU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Electrical Datasheet GA060TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
|
Original
|
GA060TH65-CAU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Electrical Datasheet GA040TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications
|
Original
|
GA040TH65-CAU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
|
Original
|
GA040TH65
OT-227
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
|
Original
|
GA060TH65
OT-227
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
|
Original
|
GA040TH65
OT-227
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
|
Original
|
GA060TH65
OT-227
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA080TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
|
Original
|
GA080TH65
OT-227
|
PDF
|
|
|
TA32912Q
Abstract: TA329-12Q TA32914Q TA32910Q TA329-14Q
Text: TA329.Q . TA329.Q Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4680-3.0 DS4680-3.1 July 2002 APPLICATIONS KEY PARAMETERS • High Frequency Applications VDRM 1400V ■ High Power Choppers And Inverters IT RMS 370A ITSM 2000A
|
Original
|
TA329.
DS4680-3
400Hz
40kHz
TA32912Q
TA329-12Q
TA32914Q
TA32910Q
TA329-14Q
|
PDF
|
GATE ASSISTED TURN-OFF THYRISTORS
Abstract: ultrasonic generator 40khz AN4839 DF451 TA329
Text: TA329.Q . TA329.Q Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4680-3.0 DS4680-3.1 July 2002 APPLICATIONS KEY PARAMETERS • High Frequency Applications VDRM 1400V ■ High Power Choppers And Inverters IT RMS 370A ITSM 2000A
|
Original
|
TA329.
DS4680-3
400Hz
40kHz
TA329
GATE ASSISTED TURN-OFF THYRISTORS
ultrasonic generator 40khz
AN4839
DF451
|
PDF
|
ultrasonic generator 40khz
Abstract: GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 1200 w 40khz 40KHZ ULTRASONIC asymmetric thyristor asymmetric thyristor datasheet DF451 TA329 RC snubber diode TA32910Q
Text: TA329.Q TA329.Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs APPLICATIONS • High Frequency Applications
|
Original
|
TA329.
DS4680-2
DS4680-3
400Hz
40kHz
ultrasonic generator 40khz
GATE ASSISTED TURN-OFF THYRISTORS
ultrasonic generator 1200 w 40khz
40KHZ ULTRASONIC
asymmetric thyristor
asymmetric thyristor datasheet
DF451
TA329
RC snubber diode
TA32910Q
|
PDF
|
DF451
Abstract: TA449
Text: TA449.W TA449.W Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4681-5.0 DS4681-5.1 July 2002 APPLICATIONS KEY PARAMETERS • UPS VDRM 1400V ■ Induction Heating IT RMS 400A ITSM 4000A dVdt 1000V/µs dI/dt 1000A/µs tq 10.0µs
|
Original
|
TA449.
DS4681-5
20kHz
TA449
DF451
|
PDF
|
65c812
Abstract: asymmetric thyristor DF451 TA449 RC snubber dc motor RC snubber thyristor design AN484 MU86
Text: TA449.W TA449.W Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4681-4.1 DS4681-5.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 400A ITSM 4000A dVdt 1000V/µs dI/dt 1000A/µs tq 10.0µs APPLICATIONS • UPS ■ Induction Heating
|
Original
|
TA449.
DS4681-4
DS4681-5
20kHz
TA449
65c812
asymmetric thyristor
DF451
RC snubber dc motor
RC snubber thyristor design
AN484
MU86
|
PDF
|
ACR44U
Abstract: No abstract text available
Text: ACR44U ACR44U Fast Turn-off Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4222-3.4 DS4222-4.0 January 2000 KEY PARAMETERS VDRM 1600V 44A IT AV 550A ITSM dVdt* 600V/µs dI/dt 2000A/µs 6.0µs tq APPLICATIONS • High Frequency Applications
|
Original
|
ACR44U
DS4222-3
DS4222-4
ACR44U
|
PDF
|
ACR400SE
Abstract: ACR400SE12 ACR400SE14 ACR400SE16 ACR400SE18
Text: ACR400SE ACR400SE Fast Turn-off Asymmetric Thyristor Replaces March 1998 version, DS4202-3.1 DS4202-4.0 January 2000 APPLICATIONS KEY PARAMETERS 1800V VDRM IT AV 380A ITSM 6000A dVdt 1000V/µs dI/dt 500A/µs tq 10.0µs • High Frequency Applications ■ Regulated Power Supplies
|
Original
|
ACR400SE
DS4202-3
DS4202-4
ACR400SE
ACR400SE18
ACR400SE16
ACR400SE14
ACR400SE12
ACR400SE12
ACR400SE14
ACR400SE16
ACR400SE18
|
PDF
|
XT2116
Abstract: DS4674
Text: XT2116 XT2116 Fast Turn-on Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4674-2.2 DS4674-3.0 January 2000 KEY PARAMETERS VDRM 1600V IT AV 50A ITSM 800A dIdt 2000A/µs dV/dt 300V/µs ton 350ns APPLICATIONS • Pulse Modulators ■ Laser Diode Triggering
|
Original
|
XT2116
DS4674-2
DS4674-3
350ns
XT2116
DS4674
|
PDF
|
XT2116
Abstract: 300v vdr
Text: XT2116 XT2116 Fast Turn-on Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4674-2.2 DS4674-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1600V VDRM 50A IT AV 800A ITSM dIdt 2000A/µs dV/dt 300V/µs 350ns ton • Pulse Modulators ■ Laser Diode Triggering
|
Original
|
XT2116
DS4674-2
DS4674-3
350ns
XT2116
300v vdr
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ACR400SE ACR400SE Fast Turn-off Asymmetric Thyristor Replaces March 1998 version, DS4202-3.1 DS4202-4.0 January 2000 KEY PARAMETERS VDRM 1800V 380A IT AV 6000A ITSM dVdt 1000V/µs dI/dt 500A/µs 10.0µs tq APPLICATIONS • High Frequency Applications ■ Regulated Power Supplies
|
Original
|
ACR400SE
DS4202-3
DS4202-4
ACR400SE
ACR400SE18
ACR400SE16
ACR400SE14
ACR400SE12
|
PDF
|
