fet dual gate sot143
Abstract: SGM2014M
Text: SGM2014M SONY, GaAs N-channel Dual Gate MES FET_ hor the availability of this product, please contact the sales officir] Description Package Outline Unit : mm The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is
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SGM2014M
SGM2014M
900MHz
Ga-18dB
OT-143
-64l0Â
fet dual gate sot143
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900mhz frequency generator
Abstract: BV 9y transistor VHF Transceiver IC NE5200D rf transmitter receiver 900Mhz A5200 NE5200 SA5200D RF Radio frequency IC, 8pin 900M Wideband Amplifier
Text: Product Specification Philips Sem iconductors NE/SA5200 RF dual gain-stage DESCRIPTION FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for
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NE5200/SA5200
1200MHz
NE/SA5200
95fiA
900MHzut
711005b
10MHz
-26dBm,
900mhz frequency generator
BV 9y transistor
VHF Transceiver IC
NE5200D
rf transmitter receiver 900Mhz
A5200
NE5200
SA5200D
RF Radio frequency IC, 8pin
900M Wideband Amplifier
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Sony 104A
Abstract: No abstract text available
Text: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable lor a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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SGM2014M]
SGM2014M
900MHz
at900MHz
OT-143
M-254
Sony 104A
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IE 500 mixer
Abstract: IS-54
Text: W A« HFA3600 December 1996 Low-Noise Amplifier/Mixer Description Features The HFA3600 is a silicon Low-Noise Amplifier with high per formance characteristics allowing the design of very sensi tive, wide dynamic-range 900MHz receivers with minimal
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HFA3600
900MHz
HFA3600
900MHz
at900MHz
1000iJ
FA3600IB
3600IB
IE 500 mixer
IS-54
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