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    American Technical Ceramics Corp ATC100B621JT100XT

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    Bristol Electronics ATC100B621JT100XT 217
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    Kyocera AVX Components 100B621JT100XT

    Silicon RF Capacitors / Thin Film 100volts 620pF 5%
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    TTI 100B621JT100XT Reel 6,000 500
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    ATC100B621JT100X Datasheets Context Search

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    ATC100B102JT50XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original
    MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC100B102JT50XT PDF

    Fair-Rite bead

    Abstract: AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original
    MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 Fair-Rite bead AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT PDF

    blf574

    Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
    Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract


    Original
    AN10714 BLF574 BLF574, AN10714 Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d PDF

    ATC200B103KT50XT

    Abstract: ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original
    MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC200B103KT50XT ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF PDF