TO272
Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to
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MWIC930/D
MWIC930R1
MWIC930GR1
MWIC930
MWIC930R1
TO272
RM73B2BT
A113
GRM42
MWIC930GR1
2XE3
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transistor marking code 1325
Abstract: R04003 ims pcb filtronic Solid State
Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FPD1000AS
FPD1000AS
J-STD-020C,
transistor marking code 1325
R04003
ims pcb
filtronic Solid State
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transistor SMD P1f
Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
transistor SMD P1f
Transistor p1f
MARKING P1F
SMD Transistor p1f
p1f on
MIL-HDBK-263
T491B105M035AS7015
ON MARKING P1F
Filtronic
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transistor SMD P2F
Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
Text: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FPD1000AS
FPD1000AS
J-STD-020C,
transistor SMD P2F
smd p2f transistor
smd code z16
transistor marking code 1325
transistor z14 smd
0604HQ-1N1
T491B105M035AS7015
filtronic Solid State
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140-A525-SMD
Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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AGRB03GM
AGRB03GM
IS-95
DS04-259RFPP
140-A525-SMD
Z1 SMD
agere c8 c1
atc600
JESD22-C101A
Sprague Electric
SMD MOSFET N Z4
agere c8
vj1206y223kxa
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J293
Abstract: ATC600S150JW J1805 ATC600S6R8CW atc600s1 J053 TO272 RM73B2BT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage structure. Its
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MWIC930
MWIC930R1
MWIC930GR1
J293
ATC600S150JW
J1805
ATC600S6R8CW
atc600s1
J053
TO272
RM73B2BT
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MWIC930N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to
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MWIC930N
MWIC930NR1
MWIC930GNR1
MWIC930N
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Untitled
Abstract: No abstract text available
Text: Document Number: MWIC930 Freescale Semiconductor Rev. 5, 5/2006 Replaced by MWIC930NR1 GNR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MWIC930
MWIC930NR1
MWIC930
MWIC930R1
MWIC930GR1
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J252
Abstract: A113 AN1955 AN1987 MWIC930 MWIC930GNR1 MWIC930GR1 MWIC930NR1 MWIC930R1
Text: Freescale Semiconductor Technical Data MWIC930 Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage structure. Its
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MWIC930
MWIC930
MWIC930NR1
MWIC930GNR1
MWIC930R1
MWIC930GR1
J252
A113
AN1955
AN1987
MWIC930GR1
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RM73B2AT102J
Abstract: free schematic diagram of IC 4558 free IC 4558 RM73B2AT102J DATASHEET RM73B2BT105J INF 740 J7440 RM73B2BT KOA RM73B2AT102J DATASHEET Fet j584
Text: Document Number: MWIC930 Freescale Semiconductor Rev. 5, 5/2006 Replaced by MWIC930NR1 GNR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MWIC930
MWIC930NR1
MWIC930
MWIC930R1
MWIC930GR1
RM73B2AT102J
free schematic diagram of IC 4558
free IC 4558
RM73B2AT102J DATASHEET
RM73B2BT105J
INF 740
J7440
RM73B2BT
KOA RM73B2AT102J DATASHEET
Fet j584
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SMD Transistor p1f
Abstract: bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD FPD1000AS MIL-HDBK-263
Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
SMD Transistor p1f
bd 222 smd
MARKING P1F
smd p1f
transistor SMD P1f
marking code 68W
PHEMT marking code a
transistor BD 222 SMD
MIL-HDBK-263
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transistor SMD P1f
Abstract: atc600s marking code 68W MARKING P1F SMD Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015 Transistor p1f CB100
Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz
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FPD1000AS
FPD1000AS
R04003,
CB100
transistor SMD P1f
atc600s
marking code 68W
MARKING P1F
SMD Transistor p1f
MIL-HDBK-263
T491B105M035AS7015
Transistor p1f
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ims pcb
Abstract: No abstract text available
Text: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FPD1000AS
FPD1000AS
PARSTD-1686
MIL-HDBK-263.
FPD1000AS-EB
EB-1000AS-AB
880MHz)
EB-1000AS-AA
85GHz)
ims pcb
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Untitled
Abstract: No abstract text available
Text: Document Number: MWIC930N Rev. 6, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescales newest High Voltage 26 to
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MWIC930N
MWIC930N
MWIC930NR1
MWIC930GNR1
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MWIC930
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its
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MWIC930
MWIC930R1
MWIC930GR1
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ATC600S680JW250
Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS
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FPD1000AS
FPD1000AS
R04003,
CB100
ATC600S680JW250
PC-SP-000010-006
AMP-103185-2
atc600s
ATC600S5R
T491B105M035AS7015
ATC600S2R0BW250
ATC600S680
ATC600S3R
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020C
Abstract: AN1955 AN1987 MWIC930 MWIC930GR1 MWIC930R1 A 2057
Text: Freescale Semiconductor Technical Data MWIC930 Rev. 2, 12/2004 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its
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MWIC930
MWIC930
MWIC930R1
MWIC930GR1
020C
AN1955
AN1987
MWIC930GR1
A 2057
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hatching machine
Abstract: MWIC930 MWIC930GR1 MWIC930R1 RM73B2AT102J
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and
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MWIC930/D
MWIC930R1
MWIC930GR1
MWIC930
MWIC930R1
hatching machine
MWIC930GR1
RM73B2AT102J
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
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CAPACITOR 33PF
Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT
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FPD1000AS
31dBm
42dBm
-52dBc
21dBm
FPD1000AS
14GHz)
EB1000AS-AD
CAPACITOR 33PF
8653 p
T491B105M035AS7015
ATC600S680
atc600s2r0bw
TP 220 bjt
Tyco 108-18
capacitor 1mf
BC 251 transistor
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transistor SMD P1f
Abstract: SMD Transistor p1f PHEMT marking code a MARKING P1F Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015
Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
transistor SMD P1f
SMD Transistor p1f
PHEMT marking code a
MARKING P1F
Transistor p1f
MIL-HDBK-263
T491B105M035AS7015
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transistor Bc 542
Abstract: transistor bc 567
Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power
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FPD1000AS
FPD1000AS
31dBm
42dBm
-52dBc
21dBm
85GHz)
EB-1000AS-AA
14GHz)
transistor Bc 542
transistor bc 567
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transistor SMD P1f
Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
transistor SMD P1f
R04003
A114
A115
JESD22
ATC600S5R6CW250
PHEMT marking code a
ATC600S680
marking code P1F
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70GHz HEMT Amplifier
Abstract: smd code z16 transistor z14 smd FPD1000AS T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf
Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized
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FPD1000AS
FPD1000AS
31dBm
42dBm
-52dBc
21dBm
880MHz)
EB1000AS-AB
70GHz HEMT Amplifier
smd code z16
transistor z14 smd
T491B105M035AS7015
atc600s2r0bw
max 9694 e
transistor bc 567
capacitor 1mf
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