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    TRANSISTOR REPLACEMENT GUIDE d882

    Abstract: transistor D1876 TRANSISTOR D412 7403-09FR d1876 transistor SIL-PAD 2000 density transistors D1876 SIL-PAD 3223 Sil Pad A2000 0.015 TR-NWT-000930
    Text: Thermally Conductive Interface Materials for Cooling Electronic Assemblies Sil-Pad S E L E C T I O N G U I D E All statements, technical information and recommendations herein are based on tests we believe to be reliable, and THE FOLLOWING IS MADE IN LIEU OF ALL WARRANTIES,


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    TOWA Electrolytic capacitor

    Abstract: 593d epcos TCM1C105ASSR hitachi TMCM kemet footprint 6032-15 partsnic TCM partsnic FPS 3528 267L3502685MR-720 B45196E
    Text: Manufacturer’s Cross Reference and Tantalum Chip Capacitor Part Numbering Systems P.O. Box 5928 Greenville, SC 29606 Phone 864 963-6300 Fax (864) 963-66521 www.kemet.com F3075D 11/04 ATTENTION: When crossing another manufacturers' part number to KEMET T491 part number, you must be


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    PDF F3075D TOWA Electrolytic capacitor 593d epcos TCM1C105ASSR hitachi TMCM kemet footprint 6032-15 partsnic TCM partsnic FPS 3528 267L3502685MR-720 B45196E

    9833

    Abstract: telephone
    Text: Westcode Semiconductors AUSTRALIA_ GREECE_ Westek Industrial Products Pty Ltd. Unit 2/8-10 Maria Street, Laverton North, Victoria 3026 Telephone: 03 9369 8802 Fax: (03) 9369 8006 Ebeh A. Kypriotis S.A., P.O. Box 9


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    PDF D-34277 9833 telephone

    WESTCODE SW

    Abstract: westcode ct K2730
    Text: W estcode Sem iconductors AUSTRALIA_ GREECE_ SINGAPORE S.E. ASIA _ W estinghouse Brake and Signal Co. (Aust) Lim ited, Ebeh A. K yp rio tis S A , C onvergent System s (S) Private L im ited,


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    accelerator rockwell modem

    Abstract: com- 4481 PROCOMM PLUS
    Text: RC224AT/1 AccelerATor Kit User's Guide Rockwell International Digital Communications Division 1991 R o ckw ell In te rn a tio n a l All R ights R eserved P rin ted in U .S.A . O rd er No. 953 A u g u s t 1991 R C 22 4 A T /1 -P A c c e le ra to r Kit U ser's G uide


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    PDF RC224AT/1 J22106 accelerator rockwell modem com- 4481 PROCOMM PLUS

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 jiA Standby • Fast Byte Write Time— 200 ps or 1 ms • Data Retention >200 years


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    PDF 28C17A 32-updates. DS11127F L103201

    24CQ1A

    Abstract: 24CG1A 28 pin ic TM 1628 HT 8870 24CQ1
    Text: 24C01A/02A/04A M ic r o c h ip 1K/2K/4K 5.0V I2C Serial EEPROMs FEATURES PACKAGE TYPES • Low power CMOS technology DIP • Hardware write protect • Two wire serial interface bus, l2C ™ compatible A0 1 A1 2 A2 3 Vss 4 • 5.0V only operation • Self-timed write cycle including auto-erase


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    PDF 24C01A/02A/04A 14-lead T37NC DS11183D-page 24CQ1A 24CG1A 28 pin ic TM 1628 HT 8870 24CQ1

    TIC 593-4

    Abstract: No abstract text available
    Text: M ic r o c h ip 2 8 L V 6 4 A 64K 8K x 8 Low Voltage CMOS EEPROM FEATURES PACKAGE TYPES • 2 .7 V to 3 .6 V S u p p ly • R e a d A c c e s s T im e — 3 0 0 ns • C M O S T e c h n o lo g y fo r L o w P o w e r D is s ip a tio n RDY/BSY C • 1 28 □ Vcc


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    PDF DS211 13B-page TIC 593-4

    93CQ6

    Abstract: 93c06 national semiconductor
    Text: 93C06/46 M ic r o c h ip 256 Bit/1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES • Low power CMOS technology DIP • 16 bit memory organization - 16 x 16-bit organization 93C06 - 64 x 16-bit organization (93C46) • Single 5V only operation • Self-timed ERASE and WRITE cycles


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    PDF 93C06/46 16-bit 93C06) 93C46) 93C06/46 DS11179D-page 93CQ6 93c06 national semiconductor

    Untitled

    Abstract: No abstract text available
    Text: 85C72/82/92 M ic r o c h ip 1K/2K/4K 5.0V I2C Serial EEPROM FEATURES PACKAGE TYPES PDIP • Low power CMOS technology • 2-wire serial interface bus, l2C™ compatible • 5 volt only operation • Self-timed write cycle including auto-erase • Page-write buffer


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    PDF 85C72/82/92 128x8 256x8 14-lead DS11182D-page

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    Abstract: No abstract text available
    Text: 24AA32A MllSÖÖlSWi:!» 32K 1.8V I2C Serial EEPROM FEATURES PACKAGE TYPE • Single supply with operation down to 1,8V - Maximum write current 3 mA at 6.0V - Standby current 1 ^A max at 1,8V • 2-wire serial interface bus, l2C™ compatible • 100 kHz 1,8V and 400 kHz (5V) compatibility


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    PDF DS21162B-page

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    Abstract: No abstract text available
    Text: 24AA164 M ic r o c h ip 16K 1.8V Cascadable I2C Serial EEPROM FEATURES PACKAGE TYPES • Single supply with operation down to 1,8V PDIP w • Low power CMOS technology 8 ^ Vcc A0 □ 1 - 1 mA active current typical - 10 ^Astandby current typical at 5.5V


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    PDF 24AA164 DS21100D-page

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip 2 4 A A 0 0 /2 4 L C 0 0 /2 4 C 0 0 128 Bit I2C Bus Serial EEPROM PACKAGE TYPES DEVICE SELECTION TABLE Device Vcc Range Temp Range 24AA00 1.8- 6.0 C,l 24LC00 2.5- 6.0 C,l 24C00 4.5 - 5.5 C.I.E 8-PIN PDIP SOIC NC H 1 Vcc 2 rs •t* X


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    PDF 24AA00 24LC00 24C00 100kHz 400kHz OT-23 S21178A-page

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    Abstract: No abstract text available
    Text: 24LC32A MllSÖÖlSWi:!» 32K 2.5V I2C Serial EEPROM FEATURES PACKAGE TYPES • Single supply with operation down to 2.5V - Maximum write current 3 mA at 6.0V - Standby current 1 max at 2.5V • 2-wire serial interface bus, l2C™ compatible • 100 kHz 2.5V and 400 kHz (5V) compatibility


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    PDF DS21144B-page

    1XFH12n100

    Abstract: transistor 13n80
    Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure


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    PDF 4bflb22b 1532A 200ns) IXFH12N100 IXFH10N100 IXFM12N100 IXFM10N100 1XFH12n100 transistor 13n80

    Untitled

    Abstract: No abstract text available
    Text: 24LC174 M ic r o c h ip 16K 2.5V Cascadable I2C Serial EEPROM with OTP Security Page FEATURES PACKAGE TYPES • Single supply with operation down to 2.5V • 16 bytes OTP Secure Memory • Low power CMOS technology - 1 mA active current typical - 10 ^A sta n d b y current typical at 5.5V


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    PDF DS21101

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    Abstract: No abstract text available
    Text: 25C080/160 8K/16K 5.0V SPI Bus Serial EEPROM FEATURES • • • • • • • • • • • • • SPI modes 0,0 and 1,1 3 MHz Clock Rate Single 5V supply Low Power CMOS Technology - Max Write Current: 5 mA - Read Current: 1.0 mA - Standby Current: 1 nA typical


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    PDF 25C080/160 8K/16K 25C080 25C160 DS21147F-page

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    Abstract: No abstract text available
    Text: M ic r o c h ip 93AA76/86 8K/16K 1.8V Microwire Serial EEPROM FEATURES • Single supply operation down to 1,8V • Low power CMOS technology - 1 mA active current typical - 5^ standby current typical at 3.0V • ORG pin selectable memory configuration


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    PDF 93AA76/86 8K/16K 16-bit 93AA76) 93AA86) DS21130C-page

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    Abstract: No abstract text available
    Text: MllSÖÖlSWi:!» 25LC320 32K 2.5V SPI Bus Serial EEPROM FEATURES • SPI modes 0,0 and 1,1 • 3.0 MHz Clock Rate • Single supply with Programming Operation down to 2.5V • Low Power CMOS Technology - Max Write Current: 5.0 mA - Read Current: 1 mA at 5.5V, 3 Mhz


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    PDF 32-Byte 14-pin DS21158B-page

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    Abstract: No abstract text available
    Text: 25C320 M ic r o c h ip 32K 5.0V SPI Bus Serial EEPROM rTM FEATURES • • • • • • • • • • • • • SPI modes 0,0 and 1,1 3.0 MHz Clock Rate Single 5V Supply Low Power CMOS Technology - Max Write Current: 5 mA - Read Current: 1.0 mA at 5.5V, 3MHz


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    PDF 25C320 14-pin DS21159B-page

    Untitled

    Abstract: No abstract text available
    Text: 24AA174 M ic r o c h ip 16K 1.8V Cascadable I2C Serial EEPROM with OTP Security Page FEATURES • Single supply with operation down to 1,8V • 16 bytes OTP Secure Memory • Low power CMOS technology - 1 mA active current typical - 10 ^Astandby current typical at 5.5V


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    PDF DS21102D-page

    program eeprom 24c32a

    Abstract: 24C32AW
    Text: 24C32A MllSÖÖlSWi:!» 32K 5.0V I2C Serial EEPROM FEATURES • Voltage operating range: 4.5V to 5.5V - Maximum write current 3 mA at 5.5V - Standby current 1 ^A typical at 5.0V 2-wire serial interface bus, l2C™ compatible 100 kHz and 400 kHz compatibility


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    PDF 24C32A 32-byte DS21163B-page program eeprom 24c32a 24C32AW

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    Abstract: No abstract text available
    Text: 25LC080/160 M llS Ö Ö lS W i:! » 8K/16K 2.5V SPI Bus Serial EEPROM FEATURES • SPI modes 0,0 and 1,1 • 3 MHz Clock Rate • Single supply with programming operation down to 2.5V • Low Power CMOS Technology - Max Write Current: 5 mA - Read Current: 1.0 mA


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    PDF 25LC080/160 8K/16K 25LC080 25LC160 DS21145D-page

    Untitled

    Abstract: No abstract text available
    Text: chip_ 93C76/86 8K/16K 5.0V Microwire Serial EEPROM FEATURES • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8- or 512 x 16-bit organization 93C76 2048 x 8- or 1024 x 16-bit organization (93C86)


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    PDF 16-bit 93C76) 93C86) 93C76/86 8K/16K DS21132C-page