ST72262G2

Abstract: smd transistor marking sp1 TRANSISTOR SMD MARKING CODE 2301 SDIP32 ST72260G ST72260G1 ST72262G ST72262G1 FR MARKING SMD TRANSISTOR ST72264G1
Contextual Info: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at

Contextual Info: DO NOT SCALE THIRD ANGLE METRIC PROJECTION ALTERNATE FORM - 4 x 2 ,0 = 8 ,0 SE C TIO N 4 9 ,9 - •21 ,9- A -A SECTION B -B -1 , 7 ■21 ,9!X. § M ][M M ][M ^ ][M M ][M M ] [M M ] [M M ] [M HÜBIiliiii Biiiiiiiiii HIÜIBIBilH l i i l h i h i <^ s mm iiiiBiliüB

BFR92P

Abstract: 011v1
Contextual Info: BFR92P NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

ELM36405EA

Contextual Info: 单 P 沟道 MOSFET ELM36405EA-S •概要 ■特点 ELM36405EA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-20V ·Id=-5A ·Rds on < 44mΩ (Vgs=-4.5V) ·Rds(on) < 70mΩ (Vgs=-2.5V) ·Rds(on) < 100mΩ (Vgs=-1.8V)

P3055

Abstract: 50V 20A buck converter P3055L N1164 SOIC-24 dual n-channel buck mosfet driver 12v synchronous buck converter niko-sem
Contextual Info: NIKO-SEM 5 Bit Programmable Synchronous Buck Converter with Dual LDOs Controller N1164 GENERAL DESCRIPTION FEATURES The N1164 is a 5 bit TTL-compatible input, digital-to-analog DAC programmable, synchronous buck converter with dual LDOs controller designed specifically to power the

USCAR 2 tyco

Contextual Info: 4 T H 1S D R A W 1 NG c IS 3 U N P U B L 1S H E D . RELEASED BY C O P Y R 1G H T 2 0 TYCO ELECTRON ICS CORPORATION. FOR ALL PUBLICATION RIGHTS - LOC REV I S IONS D I ST FX RESERVED. D E S C R I P T I ON REVISED A3 KEY CONFIGURATION "A" SCALE I : KEY CONFIGURATION "B"

P70N02LDG

Contextual Info: Single N-channel MOSFET ELM32406LA-S •General description ■Features ELM32406LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=65A Rds(on) < 8.5mΩ (Vgs=10V) Rds(on) < 15mΩ (Vgs=4.5V)

1355047

Abstract: junior power timer amp 2p junior timer 1355390-1
Contextual Info: í 7 , 1999 T H IS DRAWING IS UNPUBLISHED. VERTRAULICHE UNVEROEFF ENTLICHTE ZEICHNUNG 0 COPYRIGHT RELEASED FOR PUBLICATION FREI FUER VEROEFFENTLI CHUNG ALL RESERVED. BY AMP 1NCORPORATFD JNLUKKUKA l hLJ. ALLE RIGHTS R E ]CHTE VORBEHALTEN. 1 999 ï 6 MATED WITH:

BCR108W

Abstract: BFR92W E6327 VSO05561
Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: DRAWING THIS 4 MADE DRAWING @ IN T H I R D IS ANGLE UNPUBLISHED. COPYRIGHT RELEASED 19 3 PROJECTION BY AN P FOR PUBLICATION INCORPORATED. ALL ,19 INTERNATIONAL RIGHTS RESERVED. D 8S* •Sg I-.010 MAX :n=U ^ Sy “ CUT-OFF kr;' TAB . 1 2 0 — * PLATING POINT

BF2040W

Contextual Info: BF2040W Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled 4 input stages up to 1GHz
Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

free circuit diagram of USB modem

Abstract: CYGNAL cp2101 CYGNAL INTEGRATED PRODUCTS CP2101EK CP2101 10C4h CIP-51 MCS-51 mlp28 controller
Contextual Info: Preliminary CP2101 Single-Chip USB to UART Bridge SINGLE-CHIP USB to UART DATA TRANSFER - Integrated USB Transceiver; No External Resistors - Required Integrated Clock; No External Crystal Required Integrated 512-Byte EEPROM for Vendor ID, Product ID, Serial Number, Power Descriptor, Release Number and

NSVA253

Contextual Info: NSVA253 Aug-03 JRC SAW FILTER NSVA253 Application 1216.5MHz Specified Low Power Radio Station Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance

Contextual Info: BCV 26, BCV 46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV 27, BCV 47 NPN 2 1 Type Marking Pin Configuration BCV 26 FDs 1=B 2=E 3=C SOT-23 BCV 46 FEs 1=B 2=E 3=C

BF2040

Abstract: VPS05178
Contextual Info: BF2040 Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking code BB Diode

Abstract: ir 831 Q62702-B592 sod323 diode marking code AC 5k variable resistance CT28
Contextual Info: BB 831 Silicon Variable Capacitance Diode Preliminary data •Frequency range up to 2 GHz special design for use in TV-sat indoor units Type Marking Ordering Code Pin Configuration Package BB 831 white T Q62702-B592 1=C SOD-323 2=A Maximum Ratings Parameter

Contextual Info: シングル P チャンネル MOSFET ELM36405EA-S •概要 ■特長 ELM36405EA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-5A ・ Rds on < 44mΩ (Vgs=-4.5V) ・ Rds(on) < 70mΩ (Vgs=-2.5V)

Contextual Info: DRAWING THIS MA D E DRAWING 0 IN 15 4 THIRD ANGLE UNPUBLI5HED. COPYR I G H T 3 PROJECTION RELEASED 19 BY ANP FOR P U B L I C A T I O N I N CORPORAT ED . ALL , 19 INTERNATIONAL RIGHTS RESERVED. D -.010 MAX CUT-OFF TAB . 12 0 - * PLATING POINT OF M E A 5 U R E N E N T

NSVA254

Contextual Info: NSVA254 Aug-03 JRC SAW FILTER NSVA254 Application 1252.5MHz Specified Low Power Radio Station Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance

NSVA386

Contextual Info: NSVA386 Aug-03 JRC SAW FILTER NSVA386 Application PAGER 280MHz Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance 230Ω//-7pF

NSVA372

Contextual Info: NSVA372 Aug-03 JRC SAW FILTER NSVA372 Application PAGER 325MHz Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance 230Ω//-5pF

BFR92W

Abstract: VSO05561 marking p1S
Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Single P-channel MOSFET ELM36405EA-S •General description ■Features ELM36405EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-5A Rds(on) < 44mΩ (Vgs=-4.5V) Rds(on) < 70mΩ (Vgs=-2.5V)