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    Microchip Technology Inc ATAVRAUTO102

    DEBUGGER KIT
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    DigiKey ATAVRAUTO102 1
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    Pulse Electronics Corporation HM7142NLT

    Audio Transformers / Signal Transformers AUTO-10GBT MODULE SIN 10G 1:1
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    TTI HM7142NLT Reel 300 300
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    AUTO10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EDD2516AETA-5B-E

    Abstract: DDR333 DDR400 EDD2516AETA EDD2516AETA-5C-E EDD2516AETA-6B-E EDD2516AETA-7A-E
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2516AETA 16M words x 16 bits Specifications Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant) • Power supply:


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    PDF EDD2516AETA 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps cycles/64ms M01E0107 E0859E20 EDD2516AETA-5B-E DDR333 DDR400 EDD2516AETA EDD2516AETA-5C-E EDD2516AETA-6B-E EDD2516AETA-7A-E

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS43R16800A 8Meg x 16 128-MBIT DDR SDRAM PRELIMINARY INFORMATION JULY 2005 FEATURES DEVICE OVERVIEW • • • • ISSI’s 128-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory


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    PDF IS43R16800A 128-MBIT 728-bit 32M-bit 16-bit

    DDR333

    Abstract: IS43R16800A-6
    Text: ISSI IS43R16800A-6 8Meg x 16 128-MBIT DDR SDRAM PRELIMINARY INFORMATION APRIL 2006 FEATURES DEVICE OVERVIEW • • • • ISSI’s 128-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory


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    PDF IS43R16800A-6 128-MBIT 728-bit 32M-bit 16-bit DDR333 IS43R16800A-6

    DDR333

    Abstract: DDR400 EDD5108AFTA EDD5108AFTA-5B-E EDD5108AFTA-5C-E EDD5108AFTA-6B-E EDD5108AFTA-7A-E EDD5116AFTA
    Text: DATA SHEET 512M bits DDR SDRAM EDD5108AFTA 64M words x 8 bits EDD5116AFTA (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDD5108AFTA) ⎯ 8M words × 16 bits × 4 banks (EDD5116AFTA)


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    PDF EDD5108AFTA EDD5116AFTA EDD5108AFTA) EDD5116AFTA) 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps M01E0107 E0699E50 DDR333 DDR400 EDD5108AFTA EDD5108AFTA-5B-E EDD5108AFTA-5C-E EDD5108AFTA-6B-E EDD5108AFTA-7A-E EDD5116AFTA

    EDD2508AETA-7A-E

    Abstract: EDD2516AETA DDR333 DDR400 EDD2508AETA EDD2508AETA-5B-E EDD2508AETA-5C-E EDD2508AETA-6B-E
    Text: DATA SHEET 256M bits DDR SDRAM EDD2508AETA 32M words x 8 bits EDD2516AETA (16M words × 16 bits) Specifications Features • Density: 256M bits • Organization  8M words × 8 bits × 4 banks (EDD2508AETA)  4M words × 16 bits × 4 banks (EDD2516AETA)


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    PDF EDD2508AETA EDD2516AETA EDD2508AETA) EDD2516AETA) 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps M01E0706 E0859E50 EDD2508AETA-7A-E EDD2516AETA DDR333 DDR400 EDD2508AETA EDD2508AETA-5B-E EDD2508AETA-5C-E EDD2508AETA-6B-E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR SDRAM WTR Wide Temperature Range EDD5108ADTA-TI (64M words x 8 bits) EDD5116ADTA-TI (32M words × 16 bits) Pin Configurations The the EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR) SDRAM. Read and write


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    PDF EDD5108ADTA-TI EDD5116ADTA-TI EDD5108AD EDD5116AD M01E0107 E0438E10

    resistor mr6

    Abstract: SD78K0 IE-78000-R NEC MR31 resistor MR25 resistor mr4 EV-9200GF-100 PD780208 ISS123 auto-10
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF d200GF-100 EP-78064GF-R DF780208 DF78098 DF780208 IE-78000-R 78K/0 IE-78000-R IE-78000-R-BK. IE-75000-R, resistor mr6 SD78K0 NEC MR31 resistor MR25 resistor mr4 EV-9200GF-100 PD780208 ISS123 auto-10

    BA 75 is

    Abstract: DDR333 DDR333B DDR400 DDR400B
    Text: PRELIMINARY DATA SHEET 512M bits DDR SDRAM High Quality Product EDD5116AFTA-H 32M words x 16 bits Specifications Features • Density: 512M bits • Organization ⎯ 8M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)


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    PDF EDD5116AFTA-H 66-pin DDR400: DDR333: 400Mbps/333Mbps M01E0107 E0957E30 BA 75 is DDR333 DDR333B DDR400 DDR400B

    74S1057

    Abstract: 74S1055 ACT374 IE-78000-R bnc to probe clips pal22v10 EV-9200GC-80 MR15 PD178004 auto-10
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    DDR400

    Abstract: No abstract text available
    Text: DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-5-E 16M words x 16 bits, DDR400 Description Pin Configurations The EDD2516AKTA-5 is a 256M bits DDR SDRAM organized as 4,194,304 words × 16 bits × 4 banks. Read and write operations are performed at the cross


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    PDF EDD2516AKTA-5-E DDR400) EDD2516AKTA-5 66-pin 400Mbpsribed M01E0107 E0638E20 DDR400

    EDD1216AATA

    Abstract: EDD1216AATA-6B-E
    Text: DATA SHEET 128M bits DDR SDRAM EDD1216AATA 8M words x 16 bits Description Pin Configurations The EDD1216AATA is a 128M bits Double Data Rate (DDR) SDRAM organized as 2,097,154 words × 16 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 2 bits prefetchpipelined architecture. Data strobe (DQS) both for


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    PDF EDD1216AATA EDD1216AATA 66-pin 333Mbribed M01E0107 E0444E40 EDD1216AATA-6B-E

    DDR400

    Abstract: EDD1232AAFA-5C-E
    Text: PRELIMINARY DATA SHEET 128M bits DDR SDRAM EDD1232AAFA-5 4M words x 32 bits, DDR400 Description Features The EDD1232AA is a 128M bits DDR SDRAM organized as 1,048,576 words × 32 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data


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    PDF EDD1232AAFA-5 DDR400) EDD1232AA 100-pin 400Mbps M01E0107 E0401E30 DDR400 EDD1232AAFA-5C-E

    DDR400

    Abstract: EDD1232AABH-5C-E
    Text: PRELIMINARY DATA SHEET 128M bits DDR SDRAM EDD1232AABH-5 4M words x 32 bits, DDR400 Description Features The EDD1232AA is a 128M bits DDR SDRAM organized as 1,048,576 words × 32 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data


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    PDF EDD1232AABH-5 DDR400) EDD1232AA 144-ball 400Mbps M01E0107 E0532E20 DDR400 EDD1232AABH-5C-E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 128M bits DDR SDRAM EDD1232ABBH 4M words x 32 bits Specifications Features • Density: 128M bits • Organization ⎯ 1M words × 32 bits × 4 banks • Package: 144-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 2.5V ± 0.125V


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    PDF EDD1232ABBH 144-ball 400Mbps M01E0107 E0874E30

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 128M bits DDR SDRAM EDD1232AABH-5 4M words x 32 bits, DDR400 Description Features The EDD1232AA is a 128M bits DDR SDRAM organized as 1,048,576 words × 32 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data


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    PDF EDD1232AABH-5 DDR400) EDD1232AA 144-ball 400Mbps M01E0107 E0532E10

    5bti

    Abstract: DDR333 DDR333B DDR400 DDR400B
    Text: PRELIMINARY DATA SHEET 512M bits DDR SDRAM WTR Wide Temperature Range EDD5116AFTA-TI (32M words x 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 8M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)


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    PDF EDD5116AFTA-TI 66-pin DDR400: DDR333: 400Mbps/333Mbps M01E0107 E0894E30 5bti DDR333 DDR333B DDR400 DDR400B

    EDD5104ADTA-E

    Abstract: EDD5108ADTA-E EDD5116ADTA-E EDD5116ADTA-6B-E
    Text: PRELIMINARY DATA SHEET 512M bits DDR SDRAM EDD5104ADTA-E 128M words x 4 bits EDD5108ADTA-E (64M words × 8 bits) EDD5116ADTA-E (32M words × 16 bits) Pin Configurations The EDD5104AD, the EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR)


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    PDF EDD5104ADTA-E EDD5108ADTA-E EDD5116ADTA-E EDD5104AD, EDD5108AD EDD5116AD 66-pin M01E0107 E0501E10 EDD5104ADTA-E EDD5108ADTA-E EDD5116ADTA-E EDD5116ADTA-6B-E

    DDR333

    Abstract: DDR400 EDD5108AFTA EDD5108AFTA-5B-E EDD5108AFTA-5C-E EDD5108AFTA-6B-E EDD5108AFTA-7A-E EDD5116AFTA EDD5116AFTA-5B-E
    Text: DATA SHEET 512M bits DDR SDRAM EDD5108AFTA 64M words x 8 bits EDD5116AFTA (32M words × 16 bits) Features • Density: 512M bits • Organization  16M words × 8 bits × 4 banks (EDD5108AFTA)  8M words × 16 bits × 4 banks (EDD5116AFTA) • Package: 66-pin plastic TSOP (II)


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    PDF EDD5108AFTA EDD5116AFTA EDD5108AFTA) EDD5116AFTA) 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps M01E0107 E0699E50 DDR333 DDR400 EDD5108AFTA EDD5108AFTA-5B-E EDD5108AFTA-5C-E EDD5108AFTA-6B-E EDD5108AFTA-7A-E EDD5116AFTA EDD5116AFTA-5B-E

    EDD1216AJTA-5B-E

    Abstract: DDR400B EDD1216AJTA EDD1216AJTA-5C-E EDD1216AJTA-6B-E
    Text: DATA SHEET 128M bits DDR SDRAM EDD1216AJTA 8M words x 16 bits Features • Density: 128M bits • Organization  2M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 2.5V ± 0.2V


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    PDF EDD1216AJTA 66-pin 400Mbps/333Mbps/266Mbps cycles/64ms M01E0706 E0972E30 EDD1216AJTA-5B-E DDR400B EDD1216AJTA EDD1216AJTA-5C-E EDD1216AJTA-6B-E

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    DDR266A

    Abstract: DDR333B EDD1232AABH-6B-E EDD1232AABH-7A-E
    Text: DATA SHEET 128M bits DDR SDRAM EDD1232AABH 4M words x 32 bits Description Features The EDD1232AABH is a 128M bits DDR SDRAM organized as 1,048,576 words × 32 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data


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    PDF EDD1232AABH EDD1232AABH 144-ball 333Mbps/266Mbps M01E0107 E0533E50 DDR266A DDR333B EDD1232AABH-6B-E EDD1232AABH-7A-E

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 128M bits DDR SDRAM EDD1232AAFA-5 4M words x 32 bits, DDR400 Description Features The EDD1232AAFA is a 128M bits DDR SDRAM organized as 1,048,576 words × 32 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data


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    PDF EDD1232AAFA-5 DDR400) EDD1232AAFA 100-pin 400Mbps M01E0107 E0401E40

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2508AETA 32M words x 8 bits EDD2516AETA (16M words × 16 bits) Specifications Features • Density: 256M bits • Organization ⎯ 8M words × 8 bits × 4 banks (EDD2508AETA) ⎯ 4M words × 16 bits × 4 banks (EDD2516AETA)


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    PDF EDD2508AETA EDD2516AETA EDD2508AETA) EDD2516AETA) 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps M01E0107 E0859E40

    IC43R16320B

    Abstract: DDR333 DDR400 IC43R16320B-6TL
    Text: IS43R16320B IC43R16320B 512 Mb Double Data Rate Synchronous DRAM PRELIMINARY INFORMATION JUNE 2008 Features Specifications • Density: 512M bits • Organization ⎯ 8M words x 16 bits × 4 banks • Package: 66-pin plastic TSOP II ⎯ Lead-free (RoHS compliant)


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    PDF IS43R16320B IC43R16320B 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps IC43R16320B DDR333 DDR400 IC43R16320B-6TL