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    AV 29 TRANSISTOR Search Results

    AV 29 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AV 29 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hx8250a

    Abstract: HX8678A JIS-K5600 lcd 10.1 Himax touch screen Himax and TOUCH and SCREEN touch panel pin assignment Termination Pin Diagram for Liton Power Supply HX8250 HX8678-A
    Text: Messrs. Product Specification Model: MTF-TV57NP721-AV Rev. No. Issued Date. Page. C Feb .12, 08 1 / 29 LIQUID CRYSTAL DISPLAY MODULE MODEL: MTF-TV57NP721-AV Customer’s No.: Acceptance Microtips Technology Inc. 12F. No.31 Lane 169, Kang Ning St., His-Chih, Taipei Hsien, Taiwan


    Original     		PDF MTF-TV57NP721-AV hx8250a HX8678A JIS-K5600 lcd 10.1 Himax touch screen Himax and TOUCH and SCREEN touch panel pin assignment Termination Pin Diagram for Liton Power Supply HX8250 HX8678-A

    MTF-TQ57SN721-AV

    Abstract: lcd 10.1 MIL-STD-105e 320RGB HX8615A HX8218 Himax touch screen MTFTQ57SP721-AV Himax 68 MTF-TQ57SP721-AV
    Text: Messrs. Product Specification Model: MTF-TQ57SN721-AV Rev. No. Issued Date. Page. A Aug.14, 07 1 / 29 LIQUID CRYSTAL DISPLAY MODULE MODEL: MTF-TQ57SN721-AV Customer’s No.: Acceptance Microtips Technology Inc. 12F. No.31 Lane 169, Kang Ning St., His-Chih, Taipei Hsien, Taiwan


    Original     		PDF MTF-TQ57SN721-AV MTF-TQ57SN721-AV lcd 10.1 MIL-STD-105e 320RGB HX8615A HX8218 Himax touch screen MTFTQ57SP721-AV Himax 68 MTF-TQ57SP721-AV

    Untitled

    Abstract: No abstract text available
    Text: 19-3483; Rev 0; 11/04 KIT ATION EVALU LE B A IL A AV Dual PCI Express, Hot-Plug Controller Ordering Information PART TEMP RANGE PIN-PACKAGE MAX5946AETX -40°C to +85°C 36 Thin QFN MAX5946LETX -40°C to +85°C 36 Thin QFN TOP VIEW 36 35 34 33 32 31 30 29 28


    Original     		PDF MAX5946AETX MAX5946LETX 12VIN MAX5946 MAX5946

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10LS-160 Power LDMOS transistor Rev. 01 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10LS-160 BLF6G10LS-160

    350N06L

    Abstract: DIODE D29 IPD350N06L F29 SMD d29 smd
    Text: IPD350N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS on ,max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated


    Original     		PDF IPD350N06L PG-TO252-3 350N06L PG-TO252-3: 350N06L DIODE D29 F29 SMD d29 smd

    350n06l

    Abstract: DIODE D29 diode d29-08 d29 smd GSV102 diode d29-08 12
    Text: IPD350N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS on ,max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated


    Original     		PDF IPD350N06L PG-TO252-3-11 350N06L PIPD350N06L PG-TO252-3: 350n06l DIODE D29 diode d29-08 d29 smd GSV102 diode d29-08 12

    BLF888

    Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
    Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888 dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 01 — 29 March 2010 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P BLF7G27LS-75P

    BLF6G22LS-100

    Abstract: RF35 TRANSISTOR SMD BV
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 BLF6G22LS-100 RF35 TRANSISTOR SMD BV

    DIODE D29

    Abstract: 350N06L d29 diode case d29 IPD350N06L PG-TO252-3-11 F29 SMD d29 smd
    Text: IPD350N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS on ,max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated


    Original     		PDF IPD350N06L PG-TO252-3-11 350N06L DIODE D29 350N06L d29 diode case d29 PG-TO252-3-11 F29 SMD d29 smd

    Untitled

    Abstract: No abstract text available
    Text: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 1 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.


    Original     		PDF BLF8G27LS-150V; BLF8G27LS-150GV BLF8G27LS-150V 8G27LS-150GV

    Untitled

    Abstract: No abstract text available
    Text: BLP7G07S-140P Power LDMOS transistor Rev. 3 — 29 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Test signal


    Original     		PDF BLP7G07S-140P

    Untitled

    Abstract: No abstract text available
    Text: BLF8G27LS-100V Power LDMOS transistor Rev. 3 — 29 January 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.


    Original     		PDF BLF8G27LS-100V

    SmD TRANSISTOR a41

    Abstract: No abstract text available
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 SmD TRANSISTOR a41

    BLF6G22LS-100

    Abstract: RF35
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 BLF6G22LS-100 RF35

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    mitsubishi dc motor control

    Abstract: simple circuit motor forward reverse control diagram 100PF M61018GP BF119
    Text: MITSUBISHI<AV COMMON> M61018GP PRELIMINARY MOTOR DRIVER FOR CAMERA DESCRIPTION VCH VDD CT VREF NC VAF VWL2 SGND PIN CONFIGURATION M61018GP is a semiconductor integrated circuit built-in motor driver for compact camera. All power transistors which have been used as external parts so


    Original     		PDF M61018GP M61018GP mitsubishi dc motor control simple circuit motor forward reverse control diagram 100PF BF119

    Untitled

    Abstract: No abstract text available
    Text: BLF6G05LS-200RN Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.


    Original     		PDF BLF6G05LS-200RN

    Untitled

    Abstract: No abstract text available
    Text: BLP25M710 Broadband LDMOS driver transistor Rev. 1 — 29 August 2013 Product data sheet 1. Product profile 1.1 General description A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information


    Original     		PDF BLP25M710

    BLV935

    Abstract: ferroxcube 4322 ferroxcube tx
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile


    Original     		PDF BLV935 OT273 SCDS47 127041/500/01/pp12 BLV935 ferroxcube 4322 ferroxcube tx

    3N06L13

    Abstract: ANPS071E IPD50N06S3L-13 PG-TO252-3-11
    Text: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-13 PG-TO252-3-11 3N06L13 3N06L13 ANPS071E IPD50N06S3L-13 PG-TO252-3-11

    DIODE D29 -08

    Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
    Text: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88128 DIODE D29 -08 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2

    PN06L13

    Abstract: Application Note ANPS071E PG-TO252-3-11 Diode d29 08 ANPS071E IPD50N06S3L-13
    Text: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-13 PG-TO252-3-11 PN06L13 PN06L13 Application Note ANPS071E PG-TO252-3-11 Diode d29 08 ANPS071E IPD50N06S3L-13

    motorola transistor 2N2907A

    Abstract: a201 ic transistor av 29 transistor
    Text: Semiconductor, Inc. TC57 Series LINEAR REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application


    OCR Scan     		PDF FZT749 OT23-5 OT-23A TC57-01 motorola transistor 2N2907A a201 ic transistor av 29 transistor