Untitled
Abstract: No abstract text available
Text: CSD17510Q5A www.ti.com SLPS271G – JULY 2010 – REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17510Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated
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CSD17510Q5A
SLPS271G
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Untitled
Abstract: No abstract text available
Text: CSD19535KCS www.ti.com SLPS484 – JANUARY 2014 CSD19535KCS, 100 V N-Channel NexFET Power MOSFET Check for Samples: CSD19535KCS FEATURES 1 • • • • • • • 2 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating
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CSD19535KCS
SLPS484
CSD19535KCS,
O-220
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ndf02n60zg
Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
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NDF02N60Z,
NDD02N60Z
22-A114)
NDF02N60Z/D
ndf02n60zg
NDD02N60ZT4G
g1Dv
ndf02n60
NDF02N60Z
60ZG
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M0139-01
Abstract: M0137-02 P0093-01
Text: CSD16410Q5A www.ti.com SLPS205A – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET Power MOSFETs Check for Samples: CSD16410Q5A FEATURES 1 • • • • • • • 2 Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating
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CSD16410Q5A
SLPS205A
M0139-01
M0137-02
P0093-01
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STPS2L60U
Abstract: "Schottky Rectifiers" schottky diode SMB marking code 120 DO-221 ecopack2 Diode SMB marking code 14
Text: STPS2L60 Power Schottky rectifier Features • Negligible switching losses ■ Low forward voltage drop ■ Surface mount miniature package ■ Avalanche capability specified ■ ECOPACK2 compliant component SMB flat A K DO-41 STPS2L60 Description Axial and surface mount power Schottky rectifiers
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STPS2L60
DO-41
DO221-AA)
STPS2L60UF
DO-214AC)
STPS2L60A
STPS2L60U
"Schottky Rectifiers"
schottky diode SMB marking code 120
DO-221
ecopack2
Diode SMB marking code 14
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STPS20
Abstract: STPS200 stps2001
Text: STPS200170TV1 High voltage power Schottky rectifier Features • Negligible switching losses ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop ■ Insulated package: ISOTOP – Electrical insulation = 2500 V rms,
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STPS200170TV1
STPS20
STPS200
stps2001
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Untitled
Abstract: No abstract text available
Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching
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IRFPE40,
SiHFPE40
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time
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BYG23M
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
DO-214AC
2011/65/EU
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output
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TPIC6259
SLIS009A
250-mA
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Untitled
Abstract: No abstract text available
Text: Panasonic P o w er F -M O S F E T s 2SK2375 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown 5X ■ A pplications • • • • • Non-contact relay
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OCR Scan
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2SK2375
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DL5551P2
Abstract: NDL5516PC
Text: DATA SHEET PHOTO DIODE NDL5506P Series 0 50 ¿¿in InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NDL5506P Series is an InGaAs avalanche photodiode module with Internal therm oelectric cooler. This series Is available In multimode or single mode fiber. It covers the wavelength range between 1 000 and 1 600 nm with high
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OCR Scan
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NDL5506P
14-PIN
DL5590P
NDL5531P
NDL5531P1
DL5531P2
NDL5592P
NDL5592P1
DL5551P2
NDL5516PC
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Untitled
Abstract: No abstract text available
Text: Back to FETs 0 /V E F ^ IP NES 130/59 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS
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OCR Scan
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NES130/59
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IRF820PBF
Abstract: No abstract text available
Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements
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IRF820,
SiHF820
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF820PBF
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Untitled
Abstract: No abstract text available
Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110
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IRFP360,
SiHFP360
2002/95/EC
O-247AC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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irfpf40
Abstract: No abstract text available
Text: IRFPF40, SiHFPF40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 2.5 Qg (Max.) (nC) 120 Qgs (nC) 16 Qgd (nC) 67 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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IRFPF40,
SiHFPF40
2002/95/EC
O-247AC
O-247AC
O-220trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
irfpf40
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AUIRLSL4030
Abstract: AULS4030 3LD2 gs 069 marking h3a 4.5v to 100v input regulator
Text: PD - 96406B AUTOMOTIVE GRADE AUIRLS4030 AUIRLSL4030 Features l l l l l l l l Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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96406B
AUIRLS4030
AUIRLSL4030
AUIRLSL4030
AULS4030
3LD2
gs 069
marking h3a
4.5v to 100v input regulator
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Power MOSFETs Application Notes irf520
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Power MOSFETs Application Notes irf520
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AUIRLS4030-7P
Abstract: 4.5v to 100v input regulator
Text: PD - 96399A AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features l l l l l l l l D Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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6399A
AUIRLS4030-7P
AUIRLS4030-7P
4.5v to 100v input regulator
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flyback xfmr 3.5 mh
Abstract: No abstract text available
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRF730A,
SiHF730A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
flyback xfmr 3.5 mh
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Untitled
Abstract: No abstract text available
Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching
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IRFPE40,
SiHFPE40
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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100V Single P-Channel HEXFET MOSFET
Abstract: ld smd transistor p channel mosfet 100v 70a to-252 KRFR9210
Text: Transistors IC SMD Type HEXFET Power MOSFET KRFR9210 TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 Available in Tape & Reel Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 Features +0.8 0.50-0.7 Dynamic dv/dt Rating Repetitive Avalanche Rated 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15
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KRFR9210
O-252
100V Single P-Channel HEXFET MOSFET
ld smd transistor
p channel mosfet 100v 70a to-252
KRFR9210
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auirf7484q
Abstract: F7484Q AUIRF
Text: PD - 97757 AUTOMOTIVE GRADE AUIRF7484Q Features l Advanced Planar Technology l Low On-Resistance l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*
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AUIRF7484Q
auirf7484q
F7484Q
AUIRF
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
O-247AC
IRFPC50APbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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910410
Abstract: No abstract text available
Text: IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) () VGS = 10 V Qg (Max.) (nC) 17 • Fast Switching Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.5 Configuration Available • Repetitive Avalanche Rated
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IRF710,
SiHF710
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
910410
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