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    AVALANCHE TRANSISTOR 2N Search Results

    AVALANCHE TRANSISTOR 2N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AVALANCHE TRANSISTOR 2N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7218

    Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
    Text: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated


    Original     		PDF 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, 2N7218 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219

    JANTXV2N7224

    Abstract: 2N7224 JANTXV 2N7228 JANTX mosfet data sheet JANTX2N7224 JANTX2N7225 2N7228 JANTX mosfet JANTX2N7228 2N7224 2N7225 2N7227
    Text: 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated


    Original     		PDF 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTXV2N7224 2N7224 JANTXV 2N7228 JANTX mosfet data sheet JANTX2N7224 JANTX2N7225 2N7228 JANTX mosfet JANTX2N7228 2N7224 2N7225 2N7227

    2N3033

    Abstract: No abstract text available
    Text: , One, J. C/ TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18


    Original     		PDF 2N3033 2N3033 200mA 100mA

    2N7261U

    Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U
    Text: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage


    Original     		PDF 1806A IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U 100Volt, 1x106 2N7261U IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFET 2N6849HP • MOSFET Transistor In A Hermetic Metal TO-205AD Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF 2N6849HP O-205AD -100V -100V 500mJ O-205AD)

    p-channel mosfet

    Abstract: 2N7522 p-channel 200V 2n752 iGSS 80 nA Vgs 0v
    Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7522 200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -200V 0.505 Ω -8.0A Absolute Maximum Ratings


    Original     		PDF 2N7522 200Volt, -200V -160V, p-channel mosfet 2N7522 p-channel 200V 2n752 iGSS 80 nA Vgs 0v

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFET 2N6849HP • MOSFET Transistor In A Hermetic Metal TO-205AD Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF 2N6849HP O-205AD -100V 500mJ O-205AD)

    2N7261

    Abstract: 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261
    Text: PD - 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage


    Original     		PDF 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 100Volt, 1x106 2N7261 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261

    2SC4832

    Abstract: 2SA2151
    Text: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


    Original     		PDF 2SC6011 SSE-23013 2SC4832 2SA2151

    a2151a

    Abstract: 2SA2151A SANKEN AUDIO 2SA1668A sanken power audio
    Text: 2SA2151A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


    Original     		PDF 2SA2151A 2SC6011A 2SA1668A a2151a SANKEN AUDIO 2SA1668A sanken power audio

    transistor a2151

    Abstract: A2151 2SA2151 2sc6011 Sanken Transistor Mt 200 SANKEN AUDIO data A2151 ic pa sanken SC102 YG6260
    Text: 2SA2151 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


    Original     		PDF 2SA2151 SSE-23012 transistor a2151 A2151 2SA2151 2sc6011 Sanken Transistor Mt 200 SANKEN AUDIO data A2151 ic pa sanken SC102 YG6260

    2SC4832

    Abstract: c6011 sanken c6011 2sc6011 Sanken Transistor Mt 200 2SA2151 sanken high power audio amplifier SANKEN AUDIO c6011 transistor 2SA21
    Text: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


    Original     		PDF 2SC6011 SSE-23013 2SC4832 c6011 sanken c6011 2sc6011 Sanken Transistor Mt 200 2SA2151 sanken high power audio amplifier SANKEN AUDIO c6011 transistor 2SA21

    Untitled

    Abstract: No abstract text available
    Text: 2SA2151A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


    Original     		PDF 2SA2151A

    c6011a

    Abstract: 2SC6011A SANKEN AUDIO NPN c6011a sanken power transistor
    Text: 2SC6011A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


    Original     		PDF 2SC6011A 2SA2151A 2SC4382A c6011a SANKEN AUDIO NPN c6011a sanken power transistor

    c6011a

    Abstract: NPN c6011a
    Text: 2SC6011A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


    Original     		PDF 2SC6011A SSE-23015 c6011a NPN c6011a

    sanken c6011

    Abstract: 2SC4832 c6011 2SC6011 c6011 transistor NPN c6011 2SA2151 sanken audio "Sanken Rectifiers" "Sanken Electric"
    Text: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


    Original     		PDF 2SC6011 2SA2151 2SC4832 sanken c6011 2SC4832 c6011 c6011 transistor NPN c6011 2SA2151 sanken audio "Sanken Rectifiers" "Sanken Electric"

    transistor a2151

    Abstract: A2151 2sa2151 equivalent for 2sa1668 sanken a2151 2sc6011 sanken audio sanken transistors mold "Sanken Rectifiers"
    Text: 2SA2151 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


    Original     		PDF 2SA2151 2SC6011 2SA1668 transistor a2151 A2151 equivalent for 2sa1668 sanken a2151 2sc6011 sanken audio sanken transistors mold "Sanken Rectifiers"

    c6011a

    Abstract: 2SC6011A 2sc4382a 2SA2151A c6011 C6011A OR ITS EQUIVALENT SANKEN AUDIO Sanken Transistor Mt 200 NPN c6011a G746
    Text: 2SC6011A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


    Original     		PDF 2SC6011A SSE-23015 c6011a 2SC6011A 2sc4382a 2SA2151A c6011 C6011A OR ITS EQUIVALENT SANKEN AUDIO Sanken Transistor Mt 200 NPN c6011a G746

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF IRFF9130 2N6849 O-205AF -100V 500mJ O-205AF)

    diode sg 94

    Abstract: GC522 diode sg 64
    Text: r Z Z SGS-THOMSON Ä 7# S TD 2 N 50 Raoei ILE gra©M][](£S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 2N 50 V dss RDS(on Id 500 V < 5.5Í1 2 A • . . . . TYPICAL Ros(on) = 4.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF O-251) O-252) O-251 O-252 L681001 diode sg 94 GC522 diode sg 64

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O M S O N ¿ 5 S T K 2N 80 ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK2N80 dss 800 V R D S o n Id <7 a 2.1 A • TYPICAL RDS(on) = 5 0 . . AVALANCHE RUGGED TECHNOLOGY ■ . . . . 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STK2N80 OT-194 P032B

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N60 STP2N60FI V dss RDS on Id 600 V 600 V < 3 .5 Q. < 3 .5 Q. 2.9 A 2.2 A • TYPICAL RDS(on) = 3.2 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED


    OCR Scan     		PDF STP2N60 STP2N60FI V60/FI ISQWATT220

    2N7236

    Abstract: M6554 mosfet K 1377 IRFM9140 transistor 3et 2sc 1740 transistor 2SC 1384
    Text: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL IRFM914Q 2N 7236 JANS2IM7236 JAIMTX2N723G JANTXV2N7236 R -100 Volt, 0.20 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan     		PDF IRFM914Q MIL-S-19500/59B] IRFM9140D IRFM9140U O-254 MIL-S-19500 43S54S2 2N7236 M6554 mosfet K 1377 IRFM9140 transistor 3et 2sc 1740 transistor 2SC 1384

    IRFM9240

    Abstract: 2N7237 23XT
    Text: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED IRFM9S40 2N 7237 JANS2N7237 JANTX2N7237 JANTXV2N7237 HEXFET TRANSISTOR : P-CHANNEL REF: M IL -S -1 9 5 0 0 /5 9 5 ] -200 Volt, 0.51 Ohm HEXFET Product Summary


    OCR Scan     		PDF IRFM9S40 JANS2N7237 JANTX2N7237 JANTXV2N7237 IRFM9240D IRFM9240U O-254 MIL-S-19500 I-388 IRFM9240 2N7237 23XT