SMD A06 AMPLIFIER
Abstract: MAV-4 MMIC MAR-6 MMIC MAR-3 MAV11 MSA01104 MAV-3 MMIC MAR-1 MAV3 A04 monolithic amplifier
Text: MINI-CIRCUITS / AVANTEK MONOLITHIC AMPLIFIERS DC TO 8GHz 10GHz Usable MARKING IDENTIFICATION / EQUIVALENT Model Plastic Mini-circuits Equivalent SMD Mini-Circuits Equivalent 83mil HP/Avantek Equivalent Plastic HP/Avantek Equivalent SMD HP/Avantek Other Known
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10GHz
83mil
MSA-0135
MSA-0235
MSA-0335
MSA-0735
MSA-0835
MSA0185
MSA0285
MSA0385
SMD A06 AMPLIFIER
MAV-4
MMIC MAR-6
MMIC MAR-3
MAV11
MSA01104
MAV-3
MMIC MAR-1
MAV3
A04 monolithic amplifier
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AVANTEK
Abstract: Avantek amplifier apg avantek Avantek awt Avantek power amplifier avantek Low Noise Amplifier Avantek amt Avantek S avantek Low Noise Amplifier GHz avantek sa
Text: AVANTEK ORDERING AND APPLICATIONS SUPPORT A Subsidiary of Hewiett>Pack*rd Avantek Sales and Distribution Network These products are available through the Avantek World wide Distribution Network: Avantek has a worldwide Sales and Distribution Network to
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1-800-AVANTEK.
1-800-AVANTEK
AVANTEK
Avantek amplifier
apg avantek
Avantek awt
Avantek power amplifier
avantek Low Noise Amplifier
Avantek amt
Avantek S
avantek Low Noise Amplifier GHz
avantek sa
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Untitled
Abstract: No abstract text available
Text: AVANTEK IN C SCIE D ^AVANTEK • UHL%t QOObbBb 3 ■ MSA-0200 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek Chip Outline1 Features NOTAPPLICABLE • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.8 GHz
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MSA-0200
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Untitled
Abstract: No abstract text available
Text: EQE D AVANTEK INC O avantek • limibb MSA-0600 MOD AMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Am plifiers Avantek Chip Outline1 Features • • • • • OOObbaM 3 I Cascadable 50 n Cain Block Low Operating Voltage 3.5 V typical Vd
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MSA-0600
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Avantek, Inc
Abstract: Avantek 29353
Text: AVANTEK INC GbE D | Q avantek T-39-05 IM-2935-3 3 Watt, 2.9-3.5 GHz Internally Matched Power GaAs FET Avantek IMFET Package Features • • • • • • 0QGtiD12 T | 2.9-3.5 GHz Minimum Bandwidth Internally Matched Input/Output Impedance High Output Power
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IM-2935-3
0QGtiD12
T-39-05
Avantek, Inc
Avantek
29353
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Avantek UA-152
Abstract: No abstract text available
Text: 5QE D AVANTEK INC n O avantek n m 3 aGObb^a MSA-0711 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Am plifiers T * W Avantek SOT-143 Package Features • • • • • • V O Cascadable 50 i i Gain Block 3 dB Bandwidth: DC to 1.9 GHz
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MSA-0711
OT-143
MSA-0711
CA95054
310-371-8717of310-371-847&
Avantek UA-152
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AVANTEK oscillator
Abstract: Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323
Text: AVANTEK INC 2GE AVANTEK D • llMlìbb 0GGb544 T ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET _ ^ T - 3 > - Z S Avantek Chip Outline Features • Low Noise Figure: 1.1 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz
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0GGb544
ATF-13100
rel-48
AVANTEK oscillator
Avantek rf amplifier
Avantek amplifier 140
Avantek atf-1323
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avantek
Abstract: Avantek amplifier AT-41410 T-31-21 Avantek, Inc ic and 4081 AVANTEK oscillator
Text: AVANTEK Q INC imntt ooobMb3 i 2GE D avantek AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor Z .\ Features • • • • Avantek 100 mil Package Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Galn:14.0 dB typical at 2.0 GHz
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AT-41410
AT-41410
avantek
Avantek amplifier
T-31-21
Avantek, Inc
ic and 4081
AVANTEK oscillator
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AVANTEK transistor
Abstract: No abstract text available
Text: avantek O in c SCIE » AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor avantek ^pS>-o£ Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:
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AT-64023
AT-64023
AVANTEK transistor
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AVANTEK TO-8
Abstract: AVANTEK transistor
Text: AVANTEK IN C 20E imnbb QoobSTs 4 T> AVANTEK ATF-45171 AT-11571 2-8 GHz Medium Power Gallium Arsenide FET T “*3l-ZS Avantek 70 mil Flange Package Features • • • • High Output Power: 29.0 dBm typical Pi d8 at 4 GHz High Gain at 1 dB Compression:
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ATF-45171
AT-11571)
AVANTEK TO-8
AVANTEK transistor
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Untitled
Abstract: No abstract text available
Text: AVANTEK INC 2DE D avantek • AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • ll'mibb DGQti4S2 H 22.0 dBm typical Pi ¿b at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwldth Product: 7.0 GHz typical
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AT-01635
ion202
310-371-8717or310-37l-847a
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AVANTEK transistor
Abstract: AVANTEK oscillator Avantek, Inc Avantek S Avantek
Text: AVANTEK INC 20E D AVANTEK • 11411th 0QGb4bb 4 ■ AT-41411 Surface Mount Low Noise ‘ Silicon Bipolar Transistor :" " P i M S' Avantek SOT-143 Plastic Features Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.8 dB typical at 2.0 GHz High Associated Gain: 18.0 dB typical at 1.0 GHz
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11411th
AT-41411
OT-143
AVANTEK transistor
AVANTEK oscillator
Avantek, Inc
Avantek S
Avantek
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Untitled
Abstract: No abstract text available
Text: AVANTEK INC 20E D • AVANTEK i m n t t QGDbSlb 4 AT-60570 Up to 6 GHz Low Noise Silicon Bipolar Transistor ^T3 Avantek 70 mil Package Features • • Low B ias Current Operation: Low Noise Figure: 1.8 d B typical at 2.0 G Hz 2.8 d B typical at 4.0 G Hz
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AT-60570
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Untitled
Abstract: No abstract text available
Text: AVANTEK I N C Q 2GE D avantek im n tb AT-00570 ' Up to 4 GHz General Purpose Silicon Bipolar Transistor _ Avantek 70 mil Package Features • • • • • QDGfci4H3 3 16.0 dBm typical Pi dB at 2.0 GHz 11.5 dB typical Gi dB at 2.0 GHz 2.5 dB typical NF0 at 2.0 GHz
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AT-00570
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AVANTEK transistor
Abstract: No abstract text available
Text: AVANTEK INC 2ÛE D avantek • 11411b'b D00b5S2 Ô ATF-13336 2-16 GHz Low Noise Gallium Arsenide FET Avantek 36 micro-X Package1 Features • • • • • Low Noise Figure: 1.4 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB
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11411b
D00b5S2
ATF-13336
AVANTEK transistor
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Avantek S
Abstract: AVANTEK transistor
Text: SOE D AVANTEK I N C • AVANTEK im n b b QOGbS?11! b ATF-26350 AT-10650-3 2-16 GHz General Purpose Gallium Arsenide FET T -2 Avantek 50 mil Package Features • • • • \-Z $ Low Noise Figure: 2.3 dB typical at 12 GHz High Associated Gain: 8.0 dB typical at 12 GHz
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ATF-26350
AT-10650-3)
ATF-26350
CA95054
310-371-8717or
Avantek S
AVANTEK transistor
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TRANSISTOR SE 135
Abstract: AVANTEK transistor
Text: AVANTEK IN C EOE D • O avantek limiti, □QObS'i? ô ATF-46100 AT-8161 2-14 GHz Mèdium Power Gallium Arsenide FET T-31-X5 Avantek Chip Outline Features • High Output Power: 27.0 dBm typical Pi dB at 4 GHz • High Gain at 1 dB Compression: 12.0 dB typical Gi dB at 4 GHz
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ATF-46100
AT-8161)
T-31-X5
A95054
TRANSISTOR SE 135
AVANTEK transistor
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AT12535
Abstract: AT-12535 Avantek S AVANTEK oscillator Avantek amplifier 167
Text: avantek 50E inc D avantek ATF-25735 AT-12535 0.5-10 GHz General Purpose Gallium Arsenide FET Avantek 35 micro-X Package Features • • • • i m n t t ooGbS7s 3 High Output Power: 19.0 dBm typical Pi <jb at 4 GHz High Gain: 12.5 dB typical Gi dB at 4 GHz
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ATF-25735
AT-12535)
3lO-371-8717or3lO-37l
AT12535
AT-12535
Avantek S
AVANTEK oscillator
Avantek amplifier 167
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s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Abstract: AVANTEK transistor AT01670 Avantek amplifier 167 AVANTEK AT016 Avantek S Avantek UA-152
Text: AVANTEK INC 2QE D AVANTEK i m n b t a AT-01670 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 70 mil Package Features • • • • OGObMSM 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz High Galn-Bandwidth Product: 7.0 GHz typical fr
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AT-01670
devic56
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
AVANTEK transistor
AT01670
Avantek amplifier 167
AVANTEK
AT016
Avantek S
Avantek UA-152
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atf-25100
Abstract: AVANTEK transistor AVANTEK ATF-25100-GP3 93 40s
Text: AVANTEK Q INC SOE D im n b h OGDhSbS b ATF-25100 AT-8251 0.5-10 GHz Lôw Noise Gallium Arsenide FET avantek Features Avantek Chip Outline • Low Noise Flgure:.0.8 dB typical at 4 GHz » High Associated Gain: 14.0 dB typical at 4 GHz • High Output Power: 21.0 dBm typical Pkjb
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ATF-25100
AT-8251)
ATF-25100
reliab127
AVANTEK transistor
AVANTEK
ATF-25100-GP3
93 40s
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Untitled
Abstract: No abstract text available
Text: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:
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AT-64020
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Avantek, Inc
Abstract: AVANTEK transistor
Text: AVANTEK INC EDE D ^AVANTEK • im n b b OGGbbOl b ATF-46171 AT-11671 2-1(rGHz Medium Powef J Gallium Arsenide FET -1 ~T-Z\-zS Avantek 70 mil Flange Package. Features • • • • High Output Power: 27.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression:
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ATF-46171
AT-11671)
F-46171
310-371-8717of
Avantek, Inc
AVANTEK transistor
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Avantek UA-152
Abstract: No abstract text available
Text: îm n tt 2QE D AVANTEK INC AVANTEK OGObMTS G AT-42085 Up td 6 GHz Medium Power Silicon Bipolar Transistor 'T - S l- Z l Features • • • • • Avantek 85 Plastic Package .020 .51 High Output Power: 20.5 dBm typical Pi dB at 2.0 GHz High Gain at 1 dB Compression: .
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AT-42085
Avantek UA-152
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avantek
Abstract: ATF-10235 AVANTEK transistor Avantek amplifier ld-s1 ATF 351 ATF10235
Text: AVANTEK GbE D INC O avantek QGGS^b ö I T-31-25 ATF-10235 2-12 GHz Low Noise Gallium Arsenide FET Avantek micro-X Package Features • Low Noise Figure 0.8 dB typical at 4 GHz • Low Bias V d s = 2V, lDs =20 mA • High Associated Gain 13.0 dB typical at 4 GHz
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ATF-10235
T-31-25
ATF-10235
avantek
AVANTEK transistor
Avantek amplifier
ld-s1
ATF 351
ATF10235
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