1K29
Abstract: mox-750
Text: Mini-Mox Features Precision Thick Film Axial Terminal High Voltage/High Resistance B A Ohmite Series Applications • Avionics • Medical electronics • High gain feedback applications • Current pulse limiters • Vacuum and space application 1.5" typ.
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MOX1125231006FE
MOX-200
50ppm
1-866-9-OHMITE
1K29
mox-750
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rt6010
Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The
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MDS140L
MDS140L
rt6010
2200uf, 63v electrolytic capacitor
j453
transistor x 313
63v 2200uF
200B
25-mils
J345
1030 PULSED 32uS MODE-S
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960-1215 MHz transistor 20W
Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.
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0912LD20
0912LD20
20Wpk
960-1215 MHz transistor 20W
CAPACITOR 33PF
electrolytic capacitor, .1uF
470uf, 35v electrolytic capacitor
capacitor 470uf/63v
ADG419
capacitor 226 20V
47pf
55QT
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MS2205
Abstract: No abstract text available
Text: MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL M220 Epoxy Sealed DESCRIPTION:
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MS2205
MS2205
400mW
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BLA1011-10
Abstract: 200B
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain
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M3D381
BLA1011-10
OT467C
SCA75
R77/05/pp9
BLA1011-10
200B
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TAN15
Abstract: No abstract text available
Text: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor
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TAN15
TAN15
25oC2
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MDS800
Abstract: No abstract text available
Text: R.3.110599 MDS800 800 Watts, 50 Volts, Pulsed Avionics 1090 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1090 MHz, with the pulse
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MDS800
MDS800
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pressure sensor response time ms
Abstract: MEDICAL LOW PRESSURE SENSOR 1210 Pressure Sensor
Text: Model 23 Low Pressure PC Board Mountable Pressure Sensor Medical Instrumentation 0-1 PSI HVAC 0-100 mV Output Low Cost Factory Automation Process Control Avionics Temperature Compensated Air Flow Management DESCRIPTION The Model 23 is a temperature compensated, piezoresistive
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PH1090-550S
Abstract: No abstract text available
Text: Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S PH1090-550S Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty 1 Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications
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PH1090-550S
PH1090-550S
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1035 transistor
Abstract: M.P transistor
Text: 1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes
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25oC2
1035 transistor
M.P transistor
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55ay
Abstract: DME150
Text: DME 150 150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven
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25oC2
DME150
55ay
DME150
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M112
Abstract: SD1541-01 SD1541-1 A 1458
Text: SD1541-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS • 400 W min. DME 1025 - 1150 MHz • 6.5 dB min. GAIN • REFRACTORY GOLD METALLIZATION • EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND
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SD1541-01
SD1541-1
SD1541-01
M112
SD1541-1
A 1458
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AJT150
Abstract: ASI10548
Text: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:
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AJT150
AJT150
ASI10548
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T491D476M020AS
Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain
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M3D379
BLA0912-250
OT502A
SCA74
613524/06/pp11
T491D476M020AS
TRANSISTOR SMD 2X K
transistor j127
BLA0912-250
T491D226M020AS
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700 v power transistor
Abstract: No abstract text available
Text: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
700 v power transistor
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TACAN
Abstract: SD1540 SD1540-08 SD1540-8
Text: SD1540-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 350 WATTS typ. IFF 1030 - 1090 MHz 300 WATTS (min.) DME 1025 - 1150 MHz 290 WATTS (typ.) TACAN 960 - 1215 MHz 6.3 dB MIN. GAIN
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SD1540-08
SD1540-8
SD1540-08
TACAN
SD1540
SD1540-8
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mode 5 IFF
Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1011-300
429-HVVi
EG-01-DS02A
EG-01-DS02A5
mode 5 IFF
diode gp 429
hvvi
"RF MOSFET" 300W
1030mhz
hvv1011
1090mhz
RF 1090MHz
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Temic Semiconductors
Abstract: CECC9000
Text: Temic S e m i c o n d u c t o r s Application-Specific ICs for Aerospace & Military At TEMIC Semiconductors, we provide a full range of components for the demanding environ ment of the space, defense, and avionics industries. Ensuring a constant renewal of our commitment to
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dg908
Abstract: No abstract text available
Text: B DG908/909 8-Channel/Dual 4-Channel Fault Protected CMOS Analog Multiplexers FEATURES • All Channels OFF When Power OFF, For Analog Signals Up to ±2 5 V BENEFITS APPLICATIONS • Increased Reliability and Ruggedness • Avionics • Power-Down and Overvoltage Protected
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DG908/909
DG908
DG909
DG908/909
DG908
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RXB12350Y
Abstract: No abstract text available
Text: ^ M AINTENANC E TYPE 5bE D PHILIPS INTERNATIONAL 3 3 -/3 RXB12350Y TllQflEb DDMbSMb 575 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.
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RXB12350Y
0DMb54b
FO-91.
t-33-13
RXB12350Y
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Untitled
Abstract: No abstract text available
Text: ALLEN AVIONICS, INC. DIL CASE GENERAL USAGE TRANSFORMER SERIES FEATURE: •0.250“ maximum height from seating plane. ■ Low leakage inductance, winding capacitance, and DC resistance. ■ More economical than discrete transformers, four transformers per package.
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CTC470
CTC471
CTC472
CTC473
CTC474
CTC475
CTC476
CTC477
CTC478
CTC479
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Untitled
Abstract: No abstract text available
Text: Honeywell HTMOS High Temperature Products Advance Information HIGH TEMPERATURE CLOCK OSCILLATORS FEATURES APPLICATIONS • Tested -55 to +225°C, Operation to 300°C • Down-Hole Oil Well • CMOS/TTL Compatible • Avionics • Output Frequencies of 24KHz— 20MHz
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24KHzâ
20MHz
14-Pin
50ppm/year
24Khz-20Mhz
48Khz-40Mhz
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Untitled
Abstract: No abstract text available
Text: Honeywell HTMOS High Temperature Products Advance Information HIGH TEMPERATURE 5.0V VOLTAGE REFERENCE HTREF-05 FEATURES APPLICATIONS • Tested -55 to +225°C, Operation to 275°C • Down-Hole Oil Well • Optional External Biasing • Avionics • 8mA Output Current
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HTREF-05
EF-05D
100pF
HTREF-05DC
51S72
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Untitled
Abstract: No abstract text available
Text: Honeywell HTMOS High Temperature Products Advance Information HIGH TEMPERATURE NEGATIVE LINEAR REGULATOR HTNLREG FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Output Current to -300 mA • Avionics • Adjustable or Calibrated -15, -10, and -5V Output
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