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    AWT6252 Price and Stock

    Rochester Electronics LLC AWT6252M7P8

    IC POWER 2 CIRCUIT
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    DigiKey AWT6252M7P8 Bulk 160
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    Rochester Electronics LLC AWT6252RM7P8

    IC POWER 2 CIRCUIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AWT6252RM7P8 Bulk 160
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    ANADIGICS Inc AWT6252RM7P8

    AWT6252RM7P8
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    Verical AWT6252RM7P8 5,000 177
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    Rochester Electronics AWT6252RM7P8 5,000 1
    • 1 $1.81
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    ANADIGICS Inc AWT6252M7P8

    AWT6252M7P8
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    Verical AWT6252M7P8 2,500 177
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    Quest Components AWT6252M7P8 2
    • 1 $3.6225
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    Rochester Electronics AWT6252M7P8 2,500 1
    • 1 $1.81
    • 10 $1.81
    • 100 $1.7
    • 1000 $1.54
    • 10000 $1.54
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    Skyworks Solutions Inc AWT6252

    RF & MW POWER AMPLIFIER
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    Richardson RFPD AWT6252 1
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    AWT6252 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AWT6252 Anadigics Original PDF
    AWT6252M7P8 Anadigics Original PDF

    AWT6252 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    QUALCOMM

    Abstract: No abstract text available
    Text: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 41% - Low Bias Mode 39% - High Bias Mode • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original
    PDF AWT6252 AWT6252 QUALCOMM

    AWT6252

    Abstract: AWT6252M7P8
    Text: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • High Efficiency: 39% • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA • VREF = +2.85 V +2.75 V min over temp


    Original
    PDF AWT6252 AWT6252 AWT6252M7P8

    Untitled

    Abstract: No abstract text available
    Text: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • High Efficiency: 39% • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA • VREF = +2.85 V +2.75 V min over temp


    Original
    PDF AWT6252 AWT6252

    eel 16 2005

    Abstract: AWT6252 AWT6252M7P8
    Text: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • High Efficiency: 41% - Low Bias Mode 39% - High Bias Mode • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original
    PDF AWT6252 AWT6252 eel 16 2005 AWT6252M7P8

    Untitled

    Abstract: No abstract text available
    Text: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • High Efficiency: 41% - Low Bias Mode 39% - High Bias Mode • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original
    PDF AWT6252 AWT6252

    signal generator

    Abstract: AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series
    Text: Application Note WCDMA IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 0 RELEVANT PRODUCTS • • • • AWT6252 AWT6274 AWT6275 AWT6276 GENERAL DESCRIPTION The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed


    Original
    PDF AWT6252 AWT6274 AWT6275 AWT6276 signal generator AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series