QFP-64
Abstract: TC9329FA TC9329FB
Text: TOSHIBA TC9329FA/FB TO SHIBA CMOS DIGITAL IN TEGRATED CIRCUIT SILICON MONOLITHIC TC9329FA, TC9329FB PORTABLE AUDIO DTS CONTROLLER DTS-21 The TC 9 3 2 9 FA /FB is a single-chip DTS m icrocontroller for portable audio incorporating 230 MHz prescaler, PLL, and
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TC9329FA/FB
TC9329FA,
TC9329FB
DTS-21)
TC9329FA/FB
20-bit
LQFP64-P-1010-0
25typ
QFP-64
TC9329FA
TC9329FB
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC9329FA/FB TO SHIBA CMOS DIGITAL IN TEGRATED CIRCUIT SILICON MONOLITHIC TC9329FA, TC9329FB PORTABLE AUDIO DTS CONTROLLER DTS-21 The TC 9 3 2 9 FA /FB is a single-chip DTS m icrocontroller for portable audio incorporating 230 MHz prescaler, PLL, and
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TC9329FA/FB
TC9329FA,
TC9329FB
DTS-21)
20-bit
LQFP64-P-1010-0
QFP64-P-1212-0
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MBFJ310
Abstract: No abstract text available
Text: MMBFJ309LT1* MMBFJ310LT1* M A X IM U M R A T IN G S Rating CASE 318-07, STYLE 10 SOT-23 TO-236AB S ym bol Value U n it D rain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc 'G 10 m Adc Sym bol M ax U n it PD 225 mW 1.8 m W °C R«j a 556 3C W
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MMBFJ309LT1*
MMBFJ310LT1*
MMBFJ309LT1
MMBFJ310LT1
OT-23
O-236AB)
OT-23
MBFJ309
MBFJ310
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Untitled
Abstract: No abstract text available
Text: RF2413 1 GAIN CONTROLLED DUAL-CONVERSION QUADRATURE MODULATOR MICRO DEVICES Typical Applications U H F Digital and Analog Receivers • Com mercial and C onsum er System s • Digital Communications Systems • Portable Battery Powered Equipm ent • Spread Spectrum Communications Systems
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RF2413
RF2413
7341-D
F2413-4
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TA8637BF
Abstract: vcr rf modulator 82 rf modulator for vcr
Text: TOSHIBA TA8637BF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8637BF VHF MODULATOR FOR VCR OR VDP FEATURES • V id eo clam p • W h ite clip • M ain carrier o scillator • M ain carrier a tte n u a to r • V id eo M o d u la to r •
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TA8637BF
980910EBA1
33//H
TA8637BF
SSOP16-P-225-1
vcr rf modulator 82
rf modulator for vcr
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RF MOSFETs
Abstract: ax vhf hen vd
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs Designed for broadband com mercial and military applications up to 200 MHz frequency range. The high-pow er, high-gain and broadband performance of
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MRF173.
MRF173
RF MOSFETs
ax vhf hen vd
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TA8637BP
Abstract: No abstract text available
Text: TOSHIBA TA8637BP TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8637BP VHF MODULATOR FOR VCR OR VDP FEATURES • V id eo clam p • W h ite clip • M ain carrier o scillator • M ain carrier a tte n u a to r • V id eo M o d u la to r •
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TA8637BP
980910EBA1
TA8637BP
DIP16-P-300-2
75MAX
735TYP
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Untitled
Abstract: No abstract text available
Text: RF2412 I MICRO-DEVICES BROADBAND DUAL-CONVERSION QUADRATURE MODULATOR Typical Applications • Digital and Spread Spectrum Communications • Portable Battery Powered Equipment • FSK, GMSK, QPSK, DQPSK, QAM • Commercial and Consumer Systems • Analog Communication Systems
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RF2412
100KHJ,
7341-D
RF2412-5
-----------40C
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2SK192A
Abstract: No abstract text available
Text: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 0.55MAX. 0.4 CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature
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2SK192A
100MHz)
55MAX.
100MHz
2SK192A
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K192a
Abstract: No abstract text available
Text: T O SH IB A 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure : NF=1.8dB (Typ.) (f=100MHz)
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2SK192A
100MHz)
100MHz
K192a
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division RC7352 P aram etric M easurem ent U nit Features • Force voltage/measure current and force current measure voltage functions • Forced voltage range -5V to +15 V • Four programmable measured current ranges:
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RC7352
DS30007352
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 0.55MAX. 0.4 CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature
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2SK192A
55MAX.
100MHz)
100MHz
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2sk192
Abstract: 2SK192A BL 2SK192A
Text: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A FM TUNER APPLICATIONS U nit in mm VHF BAND AM PLIFIER APPLICATIONS 4.2M AX. • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure : NF = 1.8dB (Typ.) (f= 100MHz)
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2SK192A
100MHz)
55MAX.
100MHz
2sk192
2SK192A BL
2SK192A
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2sk161
Abstract: 2SK1619
Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR 9 <; SILICON N CHANNEL JUNCTION TYPE 1 fi 1 k Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 4.2MAX. : NF = 2.5dB Typ. (f = 100MHz) Low Noise Figure • High Forward Transfer Admittance : |Yfs| =9m S (Typ.)
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2SK161
100MHz)
2sk161
2SK1619
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 3SK259 TOSHIBA FIELD EFFECT TRANSISTOR 3 SILICON N CHANNEL DUAL GATE MOS TYPE <; \c i * q TV TUNER, UHF RF AM PLIFIER APPLICATIONS. TV TUNER VHF W ID E BAND RF AM PLIFIER APPLICATIONS. U nit in mm z. i ±o. 1 • . ± 0. 1 1 25 Superior Cross Modulation Performance.
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3SK259
025pF
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Untitled
Abstract: No abstract text available
Text: . RF2454_ R F H MICRO DEVICES V H F Q UADRATURE MODULATOR T y p ic al A pp lication s • Digital and Spread Spectrum Systems • AM, SSB, DSB Modulation • GMSK, QPSK, DQPSK, QAM Modulation • Image-Reject Upconverters • Private Mobile Radio Systems P ro du ct D escription
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RF2454_
RF2454
RF2454
63-j139
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2SK192
Abstract: No abstract text available
Text: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K19 2A FM TUNER APPLICATIONS Unit in mm VHF BAND AM PLIFIER APPLICATIONS 4.2 M AX. • High Power Gain : GPs = 24dB Typ. (f= 100MHz) • Low Noise Figure : N F= 1.8dB (Typ.) (f= 100MHz)
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2SK192A
100MHz)
55MAX.
2SK192
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11C44
Abstract: 11c44dc three phase sequence detector phase sequence detector IC404 Phase Frequency detector sine wave vfd inverter circuit diagram 11C44 DC C44DC three phase vfd circuit diagram
Text: 11C44'/ PH A SE/FR EQ U EN C Y DETECTOR 11C00 SERIES G EN ER A L D E S C R IP T IO N — The 11C44 co n ta in s a P hase/Frequency D etector, a Phase D ecte ctor, a C harge Pum p, and an A m p lifie r. The P hase/Frequency D ete ctor acce pts T T L signa ls re prese nting a R eference Frequ ency (RF and a V ariable Fre
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11C44
11C00
11C44
IC404
R3200B
11c44dc
three phase sequence detector
phase sequence detector
Phase Frequency detector
sine wave vfd inverter circuit diagram
11C44 DC
C44DC
three phase vfd circuit diagram
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT jU P D 1 7 8 0 0 2 , 1 7 8 0 0 3 8-BIT SINGLE-CHIP MICROCONTROLLERS The ¿¡PD178002 and 178003 are 8-bit single-chip CMOS m icrocontrollers that incorporate hardware for digital tuning system s. The CPU uses the 78K/0 architecture, w hich makes it easy to im plem ent high-speed access to internal mem ory
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PD178002
78K/0
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GK2AN
Abstract: TC9316FB skip 24 evi 10 transistor K52 skip 24 evi 10 t3 TC9316 TC9316F TC9316FA TD6134AF TD7101F
Text: T O S H IB A TC9316F/FA/FB TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9316F, TC9316FA, TC9316FB DTS MICRO CONTROLLER CONTAINING PLL, LCD DRIVER DTS-11 TC9316F/FA/FB are a 4bit CMOS microcontroller for digital tuning system capable of making 3V low voltage
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TC9316
TC9316F,
TC9316FA,
TC9316FB
DTS-11)
TC9316F/FA/FB
TC9316F)
TC9316FB)
GK2AN
TC9316FB
skip 24 evi 10
transistor K52
skip 24 evi 10 t3
TC9316F
TC9316FA
TD6134AF
TD7101F
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HEF4750VDF
Abstract: HEF4751V
Text: HEF4750V Signetics Frequency Synthesizer Product Specification Linear Products DESCRIPTION The HEF4750V frequency synthesizer is one of a pair of LOCMOS devices, primarily intended for use in high-perfor mance frequency synthesizers; e.g., in all communication, instrumentation, tele
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HEF4750V
HEF4750V
HEF4751V.
HEF4750VDF
HEF4751V
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MRF151G
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF151G RF P o w e r Field-Effect T ra n sisto r N-Channel Enhancement-Mode MOSFET . . . designed fo r b roadband co m m ercia l and m ilita ry a pp licatio n s at fre q u en cies to 175 MHz. The h ig h pow er, high gain and broadband perfo rm a n ce o f th is device makes
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RF151G
MRF151G
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 4-BIT SINGLE-CHIP MICROCONTROLLER FOR PORTABLE RADIOS The ¿¡PD17015 is a super low-voltage 4-bit single-chip m icrocontroller for digital tuning applications. It features a prescaler that can operate at frequencies up to 220 MHz, a PLL synthesizer, and an LCD controller/driver, all
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PD17015
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N M494 i[LG SINGLE CHIP VOLTAGE TUNING SYSTEM WITH 4 ANALOG CONTROLS AND *iP INTERFACE NV M EM ORY FOR 20 PROGRAM W ORDS 17 BIT x 20 . TUNING VOLTAGE 12 BITS . BAND 2 BITS . MULTI STANDARD 2 BITS - PROGRAM SKIP BIT 1 BIT - 10,000 M ODIFY CYCLES PER W ORD
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M2872
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