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    B 1566 TRANSISTOR Search Results

    B 1566 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    B 1566 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRf 48 MOSFET

    Abstract: MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A IRF133
    Text: - Standard Power M O SFET s File N u m b e r IRF130, IRF131, IRF132, IRF133 1566 Power M O S Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors


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    IRF130, IRF131, IRF132, IRF133 0V-100V 92CS-33741 IRF132 IRF133 IRf 48 MOSFET MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A PDF

    MC1566L

    Abstract: MC1466L equivalent MC1566 1466 HO MC1466 MC1466L schematic of mc1466 Transistor B 1566 MC 1466 L MJE340 REGULATOR
    Text: MOTOROLA Specifications and Applications Information PRECISION WIDE-RANGE VOLTAGE and CURRENT REGULATOR MONOLITHIC VOLTAGE AND CURRENT REGULATOR . SILICON MONOLITHIC INTEGRATED CIRCUiT This unique "floating" regulator can deliver hundreds of volts — limited only by the breakdown voltage of the external series


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    MC1466/MC1566 MC1566 MJ413 MC1466L, MC1566L MJE340 1N4001 Q-TO-40 MC1466L equivalent 1466 HO MC1466 MC1466L schematic of mc1466 Transistor B 1566 MC 1466 L MJE340 REGULATOR PDF

    Untitled

    Abstract: No abstract text available
    Text: IS0C0P1 C O d P O N E N T S LTD 7SC J> m HööbSlD ODOOElt, 30e! • ISO 4 8 8 6 5 1 0 ISOCOM INC 75C 0 0 2 1 6 D r-V Z -iS ’ IS660, IS661, IS662 HIGH VOLTAGE PHOTO DARUNGTON ISOLATORS ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted Storage Tem perature. — 55° Cto + 1 5 0 ° C


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    IS660, IS661, IS662 20Test 100mA 100S2 10Ofl PDF

    Untitled

    Abstract: No abstract text available
    Text: • ^53^31 QD2Sbn T3T H A P X N AUER PHILIPS/DISCRETE BSS87 b7E ]> J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in a SOT89 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other


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    BSS87 D025b21 PDF

    TRANSISTOR ba 751

    Abstract: BSS87 marking JC MOS MARKING KA Transistor B 1566 S2 MARKING TRANSISTOR Marking BA SOT89
    Text: • L.bSB'm OQESbn T3T H A P X N AflER P H I L I P S / D I S C R E T E b?E BSS87 D - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in a SOT89 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other


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    BSS87 TRANSISTOR ba 751 BSS87 marking JC MOS MARKING KA Transistor B 1566 S2 MARKING TRANSISTOR Marking BA SOT89 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz Q62702-F1504 OT-343 B235LDS 12nfl3 PDF

    transistor 1564

    Abstract: Transistor B 1566
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fietd-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


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    PHP18N20E T0220AB transistor 1564 Transistor B 1566 PDF

    TRANSISTOR BC 137

    Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
    Text: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case


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    23SbG5 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A Q60203-X108-B Q60203-X108-C 60203-X109 Q60203-X109-B TRANSISTOR BC 137 BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107 PDF

    2SC1541

    Abstract: transistor 1548 b 4500cm
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    re-25 700mhz, 2sa795 Tc-25 2sa794 2sa900 V156S 100hz, 250pS 2SC1541 transistor 1548 b 4500cm PDF

    thermal analysis on pcb

    Abstract: LM25576 LM2590HV-AQ LM5576 Transistor B 1566 1566 Transistor 49/54ACT3301 die national semiconductor
    Text: National Semiconductor Application Note 1566 Frederik Dostal Applications Engineer February 2007 To reduce time-to-market and component count, power management ICs with integrated power transistors such as National’s new SIMPLE SWITCHER regulators LM5576,


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    LM5576, LM25576, AN-1566 thermal analysis on pcb LM25576 LM2590HV-AQ LM5576 Transistor B 1566 1566 Transistor 49/54ACT3301 die national semiconductor PDF

    D2395

    Abstract: No abstract text available
    Text: 2SB1566 2SD2395 Transistors Power Transistor —60V, —3A 2SB1566 I # Features # Absolute maximum ratings (Ta=25'C ) '1 ) Low Vce(sm>. (T yp .—0.3V at Ic /Ib » — 2 J — 0 .2A ) 2 ) W ide S O A (safe ope ratin g area). 3 ) C om plem ents th e 2S D2395.


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    2SB1566 2SD2395 D2395. O-220FN 0Dlb713 O-220FN O220FP D2395 PDF

    MPS 4355 transistor

    Abstract: mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor
    Text: 6091788 MICRO ELECTRONICS CORP ~~ä5 _ * 82D 00661 DE |bGT17fifl GGGDbbl 2 | Medium Power Am plifiers and Switches X P O L A R IT Y M AXIM UM R A T IN G S CASE PN PN PN PN PN 3568 3569 3638 3638A 3641 N N P P N TO-92A TO-92A TO-92A TO-92A TO-92A 625 625 625


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    bGT17fifl O-92A MPS 4355 transistor mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor PDF

    SN7401

    Abstract: SN5401 irl 4905 2857 transistor
    Text: CIRCUIT TYPES SN5401, SN7401 QUADRUPLE 2-INPUT POSITIVE NAND GATES WITH OPEN-COLLECTOR OUTPUT] schematic (each gate J OR N DUAL-IN-LINE PACKAGE (TOP VIEW) W FLAT PACKAGE (TOP VIEW) 4A o cc S (H ) ‘Æ GND 38 (E ) (î? ) r h ß u 4Y f e f - i s i i


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    SN5401, SN7401 SN5401 irl 4905 2857 transistor PDF

    2n3904 smd pin configuration

    Abstract: 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530
    Text: H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device Part Number and DESC


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    HCPL-553X HCPL-653X HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, 6N135, 6N136, HCPL-2530/ HCPL-5530) 2n3904 smd pin configuration 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530 PDF

    Untitled

    Abstract: No abstract text available
    Text: ô /• ^-THOMSON 07C D I QÜÎ4b31 5 I C O S /M O S " INTEGRATED CIRCUIT h c c /h c f Î2^ 41C 7929225 •- * 4oi3B _ :_ u 0864^ ■ r— T -4 6 -0 7 -0 8 S G” S SEM ICONDUCTOR CORP DUAL 'D '-T Y P E FLIP-FLOP • • S E T - R E S E T C A P A B IL IT Y


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    4012B 4023B PDF

    Untitled

    Abstract: No abstract text available
    Text: S G S-THOHSON 07E D ri ÜC1524A 1 I 7 ^ 5 3 ? 73C 186 52 D aiflb SM 3 I D ; 7 = v 5 ^ -/7 « 3 7 A UC3524A LINEAR INTEGRATED CIRCUITS PRELIM IN A RY DATA ADV AN CED REGULATING PULSE WIDTH MODULATORS • FULLY IN T E R C H A N G E A B L E W ITH SG1524 • PR E C ISIO N R E F E R E N C E ± 1%


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    C1524A UC3524A SG1524 200mA UC15and C3S24A 7clST237 UC1524A UC2524Â PDF

    LM3900

    Abstract: LM3301N power amplifier circuit diagram with ic lm3900 an lm3900 lm2900
    Text: bSDllSM Ü07SS4S T73 « N S C 2 LM2900/LM3900/LM3301 SflE D NATL SEMICOND LINEAR gg National Semiconductor 'T - 'T \ - I ° LM2900/LM3900/LM3301 Quad Amplifiers G eneral Description Features The LM2900 series consists of four independent, dual input, Internally compensated amplifiers which were designed


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    LM2900/LM3900/LM3301 07SS4S LM2900 LM2900/LM3900/LM3301 TL/H/7936-46 b501124 D0755b0 LM2900/ LM3900/LM3301 TL/H/7936-- LM3900 LM3301N power amplifier circuit diagram with ic lm3900 an lm3900 PDF

    LM3900

    Abstract: audio mixer ic lm3900 quad comparator LM3900 an lm3900 national LM3900 of bistable multivibrator using transistor mixer lm3900 sawtooth generator lm2900 LM390
    Text: LM2900/LM3900/LM3301 ¡^National ÆM Semiconductor LM2900/LM3900/LM3301 Quad Amplifiers General Description Features The LM2900 series consists of four independent, dual input, internally compensated amplifiers which were designed specifically to operate off of a single power supply voltage


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    LM2900/LM3900/LM3301 LM2900/LM3900/LM3301 LM2900 TL/H/7936-43 TL/H/7936-44 15vqc) TL/H/7936-48 LM3900 audio mixer ic lm3900 quad comparator LM3900 an lm3900 national LM3900 of bistable multivibrator using transistor mixer lm3900 sawtooth generator LM390 PDF

    CI 4013B

    Abstract: CI 4013 4013B uc 4013 HCC4013BK circuit diagram 4013 hcf4013 4013BE 4013 bf 4013
    Text: ô /• ^-T H O M S O N 07C D I QÜÎ4b31 5 I C O S / M O S " INTEGRATED CIRCUIT h c c /h c f Î2^ 41C 7929225 S G” S • - * S E M IC O N D U C T O R 4oi3B _ :_ u 0864^ ■ r— T-46-07-08 CORP DU AL 'D '- T Y P E FLIP-FLOP • S E T -R E S E T C A P A B IL IT Y


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    QQ14t 4013b T-46-07-08 OPERATION-16 4011B 4012B 4023B CI 4013B CI 4013 4013B uc 4013 HCC4013BK circuit diagram 4013 hcf4013 4013BE 4013 bf 4013 PDF

    Untitled

    Abstract: No abstract text available
    Text: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan


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    HXBUSX18 100MHz HXBUSX18 22CFR N61-1002-000-000 PDF

    5962-07A06

    Abstract: tms 1944 1A7-B MIL-PRF38535 S150 SN54LVTH18502A tms 1601 HXBUSX18
    Text: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan


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    HXBUSX18 100MHz HXBUSX18 22CFR N61-1002-000-000 5962-07A06 tms 1944 1A7-B MIL-PRF38535 S150 SN54LVTH18502A tms 1601 PDF

    TGAM 1

    Abstract: 2000w power amplifier circuit diagram CRYSTAL ITT TCXO 4 5 MHZ UMA10 TCXO 10 MHz ITT AM13 UMA1020M TCXO ITT
    Text: Philips Semiconductors Preliminary specification Low-voltage dual frequency synthesizer for radio telephones UMA1020M FEA TU R ES The principal synthesizer operates at VCO input frequencies up to 2.4 GHz the auxiliary synthesizer operates at 300 MHz. The auxiliary loop is intended for the


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    UMA1020M MKA602 UMA1020M 7110flEti TGAM 1 2000w power amplifier circuit diagram CRYSTAL ITT TCXO 4 5 MHZ UMA10 TCXO 10 MHz ITT AM13 TCXO ITT PDF

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


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    2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460 PDF

    kc 5188

    Abstract: 7805 Ka 2535 data sheet
    Text: NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.


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