JB82-59
Abstract: No abstract text available
Text: QBW QBH 75 177 261 80 185 158 Ø4.5 QBY kPa V-3YC21 C-3YC23 H-3YC24 M-1Cr18Ni9Ti 190 QBC Kpa M-1Cr18Ni9Ti L1 L2 325 520 230 406 230 372 QBYF Kpa QBYF QBYF3 b Ø Ø Ø Ø Ø Ø Ø Ø Ø Ø Ø6 QBF Kpa QBF1 QBF3 6 5 4 3 2 1 7 8 9 Ø Ø Ø Ø Ø Ø Ø Ø Ø Ø87
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-3YC21
C-3YC23
H-3YC24
M-1Cr18Ni9Ti
JB82-59
SZQ-1004
JB82-59
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PDF
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A42 BF 331
Abstract: No abstract text available
Text: 12345634789A6BC 1DE48F75ECF34E87C2345C7D5E C9A A2 E 3F374C2!CC9"C#$%& 'EF34EC C12B9 6C2!C#$%# F 3 !" FB 5# 1 333B9D7$936B62 'B 2AB9 3 !" 3
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12345634789A6BC
1DE48F75
ECF34
C2345
3F374C2
C12B9
12234567893A758BCD834E3F2
367D3
333B9D7
367D37D(
A42 BF 331
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PDF
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ELM-910-927
Abstract: power led heat sink ELM Technology D-12555
Text: LED Module ELM-910-927 Preliminary 6/22/2007 Wavelength Type Technology Case Infrared LED Array Module DDH FR4/Cu-plated Description 24 20,6 Infrared LED-Array consisting of five high power LED connected in series. Chipassembly covered with plastic lenses.
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ELM-910-927
D-12555
ELM-910-927
power led heat sink
ELM Technology
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PDF
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ELC-13
Abstract: IR LED infrared led 690
Text: LED - CHIP ELC-700-25-1 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up Outline (dimensions in microns) 280 240 50 epitaxial n-AlGaAs active layer 150 R 325 n-side electrode, gold alloy 50 epitaxial p-AlGaAs p-side electrode, gold alloy
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ELC-700-25-1
ELC-13
D-12555
ELC-13
IR LED infrared led 690
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PDF
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Untitled
Abstract: No abstract text available
Text: LED - Lamp ELD-850-345 15.11.2007 rev. 05 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing with standoff leads
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ELD-850-345
D-12555
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PDF
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IR LED 810 nm
Abstract: No abstract text available
Text: LED - Lamp ELD-810-345 15.11.2007 rev. 05 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing with standoff leads
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Original
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ELD-810-345
D-12555
IR LED 810 nm
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PDF
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LED standard
Abstract: No abstract text available
Text: LED - Lamp ELD-840-325 15.11.2007 rev. 02 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description Ø4,0 ±0,1 Ø3,0 ±0,1 High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing without standoff leads
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Original
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ELD-840-325
D-12555
LED standard
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PDF
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Untitled
Abstract: No abstract text available
Text: LED - Lamp ELD-810-335 15.11.2007 rev. 04 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing with standoff leads
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ELD-810-335
D-12555
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PDF
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ELD-880-595
Abstract: No abstract text available
Text: LED - Lamp ELD-880-595 15.11.2007 rev. 05 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 5 mm flat plastic case Description High-power, high-speed infrared LED, wide beam angle, housing with standoff leads 32,5 ±0,1 ±1,0 ±0,2 Note: Special packages without standoff available on request
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ELD-880-595
D-12555
ELD-880-595
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PDF
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ELD-770-344
Abstract: No abstract text available
Text: LED - Lamp ELD-770-344 15.11.2007 rev. 05 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing with standoff leads
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ELD-770-344
D-12555
ELD-770-344
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PDF
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74035
Abstract: No abstract text available
Text: LED - Lamp ELD-740-354 15.11.2007 rev. 02 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing with standoff leads
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Original
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ELD-740-354
D-12555
74035
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PDF
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str So 765
Abstract: str 765
Text: LED - Lamp ELD-780-524 03.04.2008 rev. 01 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 5 mm plastic lens Description 8,6 ±0,2 Ø5,9 Ø5,0 ±0,2 ±0,3 0,5 1 ±0,3 Note: Special packages without standoff available on request 2,54 Anode High-power, high-speed LED with narrow beam
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ELD-780-524
D-12555
str So 765
str 765
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PDF
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B 325 Dd
Abstract: BUZ 325
Text: SIEMENS BUZ 325 SIPMOS Power Transistor • N channel • Enhancement mode ' • Avalanche-rated fé V>I05‘S5 J Pin 1 Pin 2 G Type BUZ 325 Vfcs 400 V b 12.5 A ^DS on 0.35 ß Pin 3 D S Package Ordering Code TO-218AA C67078-S3118-A2 Maximum Ratings Parameter
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O-218AA
C67078-S3118-A2
O-218AA
GPT05-56
B 325 Dd
BUZ 325
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PDF
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BZX85C
Abstract: BZX85C200 BZX85C22 1.3W BZX85C24 BZX85C36 BZX85C39 BZX85C43 BZX85C7V5 BZX85C 45 C1500R
Text: 57E J> m FA C O B 345^325 GG0G773 700 • F G R S b 2X85C7V5. BZX85C200 FA60R E L E C T R O N I C S 1.3 WZener Diodes "TIUlS . Dimensions in mm. DO-41 Plastic Voltage 7.5 to 200 V Power 1.3 W Standard Voltage Tolerance is ± 5% Mounting instructions
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OCR Scan
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BZX85C7V5.
BZX85C200
DO-41
C2-17
DO-201AD
DO-27A
DO-201AE
BZX85C
BZX85C200
BZX85C22 1.3W
BZX85C24
BZX85C36
BZX85C39
BZX85C43
BZX85C7V5
BZX85C 45
C1500R
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PDF
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Untitled
Abstract: No abstract text available
Text: 7^237 D D 4 b G 1 2 325 • S 6 T H _ SGSTHOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N50 ■ . . . . V dss RDS on Id 500 V < 6 Q 2 A TYPICAL R ds (or) = 4.6 £2 AVALANCHE RUGGED TECHNOLO GY 100% AVALANCHE TESTED
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OCR Scan
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STK2N50
GC21B40
GC21620
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PDF
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bu508df
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b=lE D bbS3T31 0D2fl2?D 325 IAPX BU508AF BU508DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended fo r use in horizontal deflection
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OCR Scan
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bbS3T31
BU508AF
BU508DF
OT199
BU508DF)
bu508df
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PDF
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m5m44260aj
Abstract: No abstract text available
Text: M IT S U B IS H I NENORY/ASIC blE D • [,5^325 DOlflGMb D7 b « M I T I MITSUBISHI LSIs M5M44260AJ,LJP,RT-7,-7S,-8,-8S,-10,-10S Preliminary FAST PAGE MODE 4,194,304-BIT(262,144-W ORD BY 16-BIT) DYNAMIC RAM D E S C R IP T IO N This is a family of 262144-word by 16-bit dynamic
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OCR Scan
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M5M44260AJ
304-BIT
16-BIT)
262144-word
16-bit
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PDF
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BZX85C
Abstract: BZX85
Text: 57E J> m 345^325 GG0G773 700 • F G R S FA C O B b2X85C7V5. BZX85C200 FA60R ELECTRONICS " T I U l S 1.3 WZener Diodes . Dimensions in mm. DO-41 Plastic Voltage 7.5 to 200 V Power 1.3 W Standard Voltage Tolerance is ± 5% Mounting instructions 1. Min. distance from body to soldering point,
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OCR Scan
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GG0G773
b2X85C7V5.
BZX85C200
FA60R
DO-41
DO-201AD
DO-27A
--------------DO-201AE
DO-201
BZX85C
BZX85
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PDF
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Untitled
Abstract: No abstract text available
Text: Package Number 325 - 5-Leatì DD PAK DIM INCHES MILLIMETERS MIN. MAX. MIN. MAX. .1 7 0 .1 8 3 .0 0 4 4 .3 2 .0 0 0 0.00 4 .6 5 0 .1 0 b .0 2 6 .0 3 7 0 .6 6 0 .9 4 C2 .0 4 5 .0 5 5 1 .1 4 0 .3 6 1 .4 0 0 .6 6 c .0 1 4 o CD A A1 D .3 1 0 .3 5 0 7 .8 7 8 .8 9
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ZZ325
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PDF
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY SEMICONDS 31E » • 3?t.êSEH 0Gl0fi63 0 MAY 1989 PLESSEY S e m ic o n d u c t o r s . PRELIMINARY INFORMATION 1 P 7 3 -4 -3 SLH 325 MINIATURE HIGH PERFORMANCE LOG I LIMITING AMPLIFIER The S L H 3 2 5 wideband amplifier e m p lo y s advanced b ip o la r in te g ra te d c irc u it t e c h n o lo g y to p e rfo rm
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0Gl0fi63
PS2328
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PDF
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SPC-401
Abstract: SPC-402 SPC-410 SPC-411 SPC-413 SPC-423 SPC-423M SPC-424 SPC-425 150Too
Text: SOLID POWER CORP DE~| û3bS70D DDQG112 S HIGH VOLTAGE TRANSISTO RS 2.0 3.5 3.5 3.5 2.0 3.5 3.5 3.5 3.5 100 100 80 100 75 100 100 100 100 300 325 200 300 325 325 325 350 400 100 100 100 100 100 100 100 100 V 400 400 200 300 400 400 40Ó 500 500 ICEO MA Ic 125°C
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OCR Scan
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03bS700
SPC-401
SPC-402
SPC-410
SPC-411
SPC-413
SPC-423
SPC-423M
TWX-510-224-6582
SPC-424
SPC-425
150Too
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PDF
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Untitled
Abstract: No abstract text available
Text: CD4029A Types CMOS Presettable Up/Down Counter INPUTS Vdo Binary or BCD-Decade Features: • Medium speed operation . . . 5 M H z typ. @ C l =15 pF and V DD~ V SS- 1 0 V The RCA-C D 4029A consists o f a four-stage binary or BCD-decade up/dow n counter w ith
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OCR Scan
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CD4029A
11--Logic
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PDF
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CflPNTS WLTM HEWLETT wSHM PACKARD blE » • 44M7584 DDlQ13b 607 « H P A MSA-1000 Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers MODAMP Features Chip Outline 1 • High Output Power: +27 dBm typical P1 jb at
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OCR Scan
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44M7584
DDlQ13b
MSA-1000
MSA-1000
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PDF
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DAMA15S
Abstract: DBMA25S DBMA25P DCMA-37S DCMA-37P DEMAM9P DEMA9S ddma-50p DDMA50S DBMM17W2P
Text: D*MA Crimp Snap D How to Order — Crimp Connectors contacts are removable Receptacles (Includes Socket Contacts) W ith .120’ Through-Mounting Holes Number of Contacts Standard (Shell Size) DEMA9S 9 (El 15(A) DAMA15S 25 (B) DBMA25S DCMA37S DDMA50S 37 (C)
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M24308
M24308/2-1
DAMA15S
M24308I2-2
DBMA25S
DBMAM25S
M24308/2-3
DCMA37S
DEMAM37S
M24308/2-4
DBMA25P
DCMA-37S
DCMA-37P
DEMAM9P
DEMA9S
ddma-50p
DDMA50S
DBMM17W2P
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PDF
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