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    B 342 D TRANSISTOR Search Results

    B 342 D TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    B 342 D TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 342 G

    Abstract: buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor
    Text: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω


    Original     		O-218 C67078-S3135-A2 transistor 342 G buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 342 Infine on t*c h o ologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated •d v /d / rated 1 VPT051SB 2 J • Ultra low on-resistance • 175"C operating temperature D G Type BUZ 342 h Vds 60 A 50 V f lDS on 0.01 n


    OCR Scan     		O-218AA C67078-S3135-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    C67078-S3135-A2

    Abstract: transistor 342 G BUZ342
    Text: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω


    Original     		O-218 C67078-S3135-A2 C67078-S3135-A2 transistor 342 G BUZ342 PDF

    buz 342 G

    Abstract: transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog
    Text: SIEMENS BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Ultra low on-resistance • 175°C operating temperature Type BUZ 342 Vds 50 V h 60 A flbS on Package Ordering Code 0.01 Q TO-218 AA C67078-S3135-A2


    OCR Scan     		O-218 C67078-S3135-A2 O-218AA buz 342 G transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog PDF

    GA200SA60SP

    Abstract: GA200SA60S
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		GA200SA60SP OT-227 E78996 2002/95/EC 11-Mar-11 GA200SA60SP GA200SA60S PDF

    CGC SWITCH

    Abstract: transistor 342 pf GA200SA60SP
    Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		GA200SA60SP OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 CGC SWITCH transistor 342 pf GA200SA60SP PDF

    b342d

    Abstract: information applikation applikation heft mikroelektronik Heft 12 information applikation mikroelektronik Transistoren DDR VEB mikroelektronik "information applikation" mikroelektronik Heft 10 ITT transistoren
    Text: m n t k if ^ s j e le lK t e n a r iH - c g|B Information Applikation in n f B = a n iis ö lH W b n a n lK Information Applikation Heft: 28 Transistorarrays Iweb Halbleiterwerk frankfurt/oder | betrieb im veto kombinet mikroelektronik KAMMER DER TECHNIK Bezirksvorstand Frankfurt/O.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Bipolar Transistors -i : . ,*&• M l VCE Pm dBM TYP (dBM) VCE (V) fc <mA> (V) (mA) Mm m. / -fr:.; λ TYP 'rrtifria' (dB) r. JH H S L 2.0 12.5 100 19 27 10 100 9.8 5.5 100 NE46134 1.0 . 12.5 100 20.5 27.5 10 50 9 5.5 100 ] 250 NE461M02 1.0


    OCR Scan     		NE46100 NE46134 NE461M02 NE85634 NE856M02 OT-89 NE94430 NE94433 PDF

    NE68018

    Abstract: 814T
    Text: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89


    OCR Scan     		NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T PDF

    ep 1387

    Abstract: 2SA738 2SA681 2SA682 i705 2SA683 2SC1361
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		2SA682 2SA683 2SA681 ep 1387 2SA738 2SA682 i705 2SA683 2SC1361 PDF

    2SC793

    Abstract: 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		2SC633A 2SC634A 2SC1079 2SC1080 2SC1382 2SC793 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520 PDF

    318F

    Abstract: AN569 MMBT2131T1
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value


    Original     		MMBT2131T1 MMBT2132T1/T3) r14525 MMBT2131T1/D 318F AN569 MMBT2131T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.


    OCR Scan     		MMBT2131T1/D MMBT2131T1 MMBT2131T3 MMBT2132T1/T3) PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBT2132T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2132T1 MMBT2132T3 Product Preview General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (T q = 25°C unless otherwise noted)


    OCR Scan     		MMBT2132T1/D MMBT2132T1 MMBT2132T3 MMBT2131T1/T3) PDF

    bipolar junction transistor

    Abstract: motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications
    Text: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.


    Original     		MMBT2131T1/D MMBT2131T1 MMBT2131T3 MMBT2132T1/T3) bipolar junction transistor motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications PDF

    318F

    Abstract: AN569 MMBT2131T1 MMBT2131T3
    Text: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)


    Original     		MMBT2131T1 MMBT2131T3 MMBT2132T1/T3) r14525 MMBT2131T1/D 318F AN569 MMBT2131T1 MMBT2131T3 PDF

    318F

    Abstract: AN569 MMBT2132T1 MMBT2132T3 318F-03
    Text: ON Semiconductort MMBT2132T1 MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS – V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating 6 Symbol Value


    Original     		MMBT2132T1 MMBT2132T3 MMBT2131T1/T3) r14525 MMBT2132T1/D 318F AN569 MMBT2132T1 MMBT2132T3 318F-03 PDF

    MOTOROLA TRANSISTOR T2

    Abstract: motorola an569 thermal motorola an569 MOTOROLA TRANSISTOR TRANSISTOR MOTOROLA 318F AN569 MMBT2132T1 MMBT2132T3
    Text: MOTOROLA Order this document by MMBT2132T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2132T1 MMBT2132T3 Product Preview General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted)


    Original     		MMBT2132T1/D MMBT2132T1 MMBT2132T3 MMBT2131T1/T3) MOTOROLA TRANSISTOR T2 motorola an569 thermal motorola an569 MOTOROLA TRANSISTOR TRANSISTOR MOTOROLA 318F AN569 MMBT2132T1 MMBT2132T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: M O T O R O L A S C O I O D E S / O P T O J " 3 4 6367255 MOTOROLA SC D È T | 3 k b ? E S 34c DIODES/OPTO S □ □ 3 7 T b t . 37966 fi D 7 “'< 3 3 " O f SILICON POWER TRANSISTOR DICE (continued) MJEC13009 DIE NO. — NPN LINE SOURCE — PL500.E586


    OCR Scan     		PL500 MJE13008 MJE13009 MJEC13009 PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT PDF

    318F

    Abstract: AN569 MMBT2131T1
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value


    Original     		MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D 318F AN569 MMBT2131T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage


    Original     		MMBT2132T3 MMBT2132T1/D PDF

    ilpi 215

    Abstract: C1 1OOUF ilc 150 eth transistor k41 brush dc motor control 200v 20a h-bridge igbt pwm k3900 82340 ilpi -115 transistor k42
    Text: □OB' PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses MOSFETs in the output stage while the


    OCR Scan     		PWR-82340 PWR-82342 PWR-82342 PWR-82340/342 8234X ilpi 215 C1 1OOUF ilc 150 eth transistor k41 brush dc motor control 200v 20a h-bridge igbt pwm k3900 82340 ilpi -115 transistor k42 PDF

    AN569

    Abstract: MMBT2131T1 MMBT2131T1G 318F
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available


    Original     		MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D AN569 MMBT2131T1 MMBT2131T1G 318F PDF