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    B P1 TRANSISTOR Search Results

    B P1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B P1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FCX591

    Abstract: FCX491 FMMT591 DSA003685
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FCX591 ✪ C PARTMARKING DETAIL COMPLEMENTARY TYPE - P1 FCX491 E B C ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage


    Original     		PDF FCX591 FCX491 -500mA, -50mA* -100mA* -50mA, 100MHz FMMT591 FCX591 FCX491 DSA003685

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FCX591 ✪ C PARTMARKING DETAIL COMPLEMENTARY TYPE - P1 FCX491 E B C ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage


    Original     		PDF FCX591 FCX491 -500mA, -50mA* -100mA* -50mA, 100MHz FMMT591

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FCX591 ✪ ISSUE 3 - NOVEMBER 1995 C PARTMARKING DETAIL COMPLEMENTARY TYPE - P1 FCX491 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage


    Original     		PDF FCX591 FCX491 Vo-100 -500mA, -50mA* -100mA* -50mA, 100MHz

    TNR10SE621

    Abstract: TNR10SE tnr10se271 tnr 221 TNR12H220K varistor tnr tnr10se271k TNR15H220K TNR20V471K TNR Varistor
    Text: SURGE ABSORBERS ‹ METAL OXIDE VARISTORS TNR R TNR Series ™Taping Specification • The Specifications for TNR C Series Dimensions(mm) Size ±0.1 B± ± 0.1 W± ±0.3 F± ±0.1 E± ±0.1 P1±0.1 P2±0.1 P3±0.1 ΦD0+0.10 TMax. T2Max. ΦD1Min. A± code


    Original     		PDF TNR5C220K470K, TNR5C820K271K TNR5C560K, TNR32E TNR20E TNR10SE621 TNR10SE tnr10se271 tnr 221 TNR12H220K varistor tnr tnr10se271k TNR15H220K TNR20V471K TNR Varistor

    HT17E11-300

    Abstract: Hyundai HT17E11 lcd hyundai EZ 0302 ecn 1310 CN24 THC63LVDM83A BHSR-02VS-1 equivalent
    Text: PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF HYDIS A N D S H A L L N O T B E REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF HEI AND MUST BE RETURNED TO HYDIS UPON ITS REQUEST. TITLE: HT17E11-300 Preliminary Product Specification Rev. P1 Hyundai Display Technology, Inc.


    Original     		PDF HT17E11-300 S864-1080 Hyundai HT17E11 lcd hyundai EZ 0302 ecn 1310 CN24 THC63LVDM83A BHSR-02VS-1 equivalent

    k 2645 MOSFET

    Abstract: MAX1536 MAX1536ETI T2055-2 voltage regulator PWM 1999 transconductance sink
    Text: LCJ/JH 9/22/05 P1 KIT ATION EVALU E L B A IL AVA 19-2729; Rev 1; 8/05 3.6A, 1.4MHz, Low-Voltage, Internal-Switch StepDown Regulator with Dynamic Output Voltage Control The MAX1536 constant-off-time, pulse-width-modulated (PWM) step-down DC-to-DC converter is ideal for use in


    Original     		PDF MAX1536 MAX1536 k 2645 MOSFET MAX1536ETI T2055-2 voltage regulator PWM 1999 transconductance sink

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FCX591 Features • • • • Part Marking Detail: P1 Complementary Type: FCX491 Capable of 1.0W of Power Dissipation Collector-current 2.0A


    Original     		PDF FCX591 FCX491 OT-89 100uAdc, 10mAdc, 60Vdc) 100mA 50mAdc,

    MARKING P1 TRANSISTOR

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# FCX591 Features • • • • Part Marking Detail: P1 Complementary Type: FCX491 Capable of 1.0W of Power Dissipation Collector-current 2.0A


    Original     		PDF FCX591 FCX491 OT-89 100uAdc, 10mAdc, 60Vdc) 100mA MARKING P1 TRANSISTOR

    23P transistor sot 23

    Abstract: PTZZ0005DA-A PWSN0008DD-A electrical symbol PRSP0008DD-D PRSP0008DA-B PRSP0008DD-A G300721H02 TSSOP-8 8d
    Text: Unit:mm Reel type A B Ｃ Ｄ E F A 330 330 178 178 330 178 W 12 12 12 P1 8 8 8 A0 4.8 6.9 7 12.0 8.0 4.8 N 80 100 60 60 100 66 W1 13.5 13.5 13 13 13.4 13.5 W2 17.5 17.5 17 15.4 17.4 15.5 12-mm width emboss taping Taping code Package name Renesas code Previous code


    Original     		PDF 12-mm G300721H02 MTE1208G-8P2S-A MTE1208H-8P2J OT-89 PLZZ0004CB-A PRSP0008DA-B PTSP0008JA-A TSOT89 TE1208-5P, 23P transistor sot 23 PTZZ0005DA-A PWSN0008DD-A electrical symbol PRSP0008DD-D PRSP0008DA-B PRSP0008DD-A G300721H02 TSSOP-8 8d

    transistor c3909

    Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57

    transistor p14

    Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8
    Text: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.


    Original     		PDF LM2940 19-May-2005 transistor p14 P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0360NB25A T0360NB25A

    T0360NB25A

    Abstract: igbt1 T0360NB T0360
    Text: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0360NB25A T0360NB25A igbt1 T0360NB T0360

    Reverse polarity relay 24vdc

    Abstract: reverse polarity relay 12vdc S312T double polarity relay 12vdc S312N relay 12vdc S312 relay 12vdc with diode relay 12 volt relay
    Text: Hoyles Electronic Developments Ltd. Unit 3 Millbrook Business Park, Mill Lane, Rainford, St Helens, WA11 8LZ HED Tel: 01744 886600 S312 Series Interface Relays Website: www.hoyles.com Fax: 01744 886607 +ve These transistorised relays are designed as Fig 4


    Original     		PDF 30vdc 120vac S312P S312T \elec\corelec\instrn\60071 Reverse polarity relay 24vdc reverse polarity relay 12vdc S312T double polarity relay 12vdc S312N relay 12vdc S312 relay 12vdc with diode relay 12 volt relay

    6B22

    Abstract: MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1
    Text: Bias Resistor Transistor MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and


    Original     		PDF MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 6B22 MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1

    2SK1283

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC M MOS FIELD B S EFFECT POWER TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		PDF 2SK1283 IEI-1209) MEI-1202 TEA-1035

    2SK1289

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD NEC ^ • B ! EFFECT POWER TRANSISTOR 2SK1289 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		PDF 2SK1289 IEI-1209) MEI-1202 TEA-1035

    2SK1749

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC M B MOS FIELD i EFFECT POWER TRANSISTOR 2SK1749 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		PDF 2SK1749 2SK1749 IEI-1209) MEI-1202 TEA-1035

    2SK1852

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC J H B DATA SHEET M OS FIELD EFFECT POWER TRANSISTOR 2SK1852 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		PDF 2SK1852 IEI-1209) MEI-1202 TEA-1035

    Untitled

    Abstract: No abstract text available
    Text: g iiK « mm h l j | b i t M *»»* a t i gMk E N 3 ICs for Communications Framing and Line Interface Component for PCM 30 and PCM 24 FALC-LH PEB 2255 Version 1.1 Preliminary Data Sheet 05.97 T2255-XV11-P1 -7600 PEB 2255 Revision History: Current Version: 05.97


    OCR Scan     		PDF T2255-XV11-P1 P-MQFP-80-1 120IA-BiDTCl8Ox 2IA-BIDI80x 2IA-BIDIH14x

    MC3386

    Abstract: MLM311 MLM339 MLM2901 transistor 2028 MLM139 CASE-646 MC3302 MC1414 MC1514
    Text: Gnd 1 C 3 8 2C □ 7 O u tp u t In p u ts V EE g £ 4 C □ 6 B a la n c e / S tr o b e □ B a la n c e 5 MC330Z MLM239 MLM239A - 4 0 to 85°C L Suffix — Case 632 P Suffix — Case 646 MLMI311 0 to 70°C G Suffix — Case 601 L Suffix — Case 632 P1 Suffix — Case 626


    OCR Scan     		PDF MLM111 MLM211 MLM311 MLM111 MLM211 MLM311 MC1514 MC1414 MC3301 MG3302 MC3386 MLM339 MLM2901 transistor 2028 MLM139 CASE-646 MC3302 MC1414 MC1514

    MLM2902

    Abstract: MC3386 mlm324 MC4141 MLM311 MC1709 MC1437 MC4741 MC1537 MC4202
    Text: G nd 1 C 3 8 2 C □ 7 O u tp u t In p u ts V EE g £ 4 C □ 6 B a la n c e / S t r o b e □ B a la n c e 5 MC330Z MLM239 MLM239A - 4 0 to 85°C L Suffix — Case 632 P Suffix — Case 646 MLMI311 0 to 70°C G Suffix — Case 601 L Suffix — Case 632 P1 Suffix — Case 626


    OCR Scan     		PDF MLM111 MLM211 MLM311 MLM111 MLM211 MLM311 MC1514 MC1414 MC3471 MC4202C MLM2902 MC3386 mlm324 MC4141 MC1709 MC1437 MC4741 MC1537 MC4202

    TIP147T

    Abstract: TIP140T TIP141T TIP142T TIP145T TIP146T PI46T
    Text: Datasheet T I P I AO T TI P 1 41 T T I P 1 4 2 T NPN T I P 1 4 5 T T I P I 46T T I P I 47T PNP G G IK ifl 1 Sem iconductor Corp. S I L I C O N POWER DARLINGTON TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824


    OCR Scan     		PDF TIP140T TIP141T TIP142T TIP145T TIP147T T0-220 TIP140T, TIP142T TIP146T PI46T