inverter 1000watt
Abstract: lambda ultraflex 1000w inverter circuit diagram 1000watt dc to ac power inverter 12v dc 240v ac 1000W inverter ULTRAFLEX ULTRAFLEX 600W make inverter 1000watt 1000W inverter circuit design 600w power supply unit
Text: INSTALLATION MANUAL ULTRAFLEX POWER SUPPLY UF2500 Series 3055 Del Sol Blvd. San Diego, CA 92154 Phone: 619 575-4400 Fax: (619) 429-1011 P/N: IMUG2500 Rev. B DATE:February 2002 TABLE OF CONTENTS INTRODUCTION 4 CERTIFICATION 4 WARRANTY 4 APPLICABILITY 4 PART NUMBER CONFIGURATION
|
Original
|
UF2500
IMUG2500
10/4A
50/48W
120/48W
120/45W
240VA)
inverter 1000watt
lambda ultraflex
1000w inverter circuit diagram
1000watt dc to ac power inverter
12v dc 240v ac 1000W inverter
ULTRAFLEX
ULTRAFLEX 600W
make inverter 1000watt
1000W inverter circuit design
600w power supply unit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Automation Controls Catalog Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat
|
Original
|
ASCTB258E
201402-T
|
PDF
|
8778401
Abstract: 8001601 HI-0201 8GHz transceiver specification MD-80 MD80C88/883 JM38510 HS 3182 HS 3282 MD82c82
Text: Military ICs 12 DIGITAL/MILITARY/SPACE PRODUCT TREES ANALOG Selection Guides Defense Selection Chart Analog Signal Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 Arrays, Transistor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
Original
|
MIL-PRF-38535
1-888-INTERSIL
8778401
8001601
HI-0201
8GHz transceiver specification
MD-80
MD80C88/883
JM38510
HS 3182
HS 3282
MD82c82
|
PDF
|
E43028
Abstract: NC2EBD-DC12V NC2D-JP-DC48V NC2-PS DC 3V relay 0.5A 220v ac DC 5V to DC 100V CIRCUIT DIAGRAM NC4D-JP-DC12V NC2EBD-DC24V NC2D-JP-DC12V NC2D-JP-DC24V
Text: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# BU2508AF Features • NPN Silicon Power Transistors With TO-3PFa Package TO-3PFa Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating
|
Original
|
BU2508AF
1500Vdc
1000mAdc,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# BU2508DF Features • With TO-3PFa package NPN Silicon Power Transistors Maximum Ratings Symbol VCEO VCBO VEBO ICP IC PC TJ TSTG Rating Collector-Emitter Voltage
|
Original
|
BU2508DF
100mA;
600mAdc)
1500Vdc
|
PDF
|
2SD1541
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SD1541 Features • • NPN Silicon Power Transistors With TOP-3Fa package Intended for use in horizontal deflection circuits of color television
|
Original
|
2SD1541
100mAdc
10Vdc)
75Adc)
2SD1541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# BU508AF Features • • • High-voltage, high-speed switching NPN transistor With TOP-3Fa package Primarily for use in horizontal deflection circuits of color television
|
Original
|
BU508AF
100mAdc,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTE2642 Silicon NPN Transistor Horizontal Deflection Output High Speed Switch TO3P Full Pack Features: D High Breakdown Voltage D High Reliability D High Speed Switching D Wide Area of Safe Operation ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
|
Original
|
NTE2642
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTE2641 Silicon NPN Transistor Horizontal Deflection Output for High Resolution Displays & Color TVs TO3P Full Pack Features: D High Voltage: VCBO = 1500V D Low Saturation Voltage: VCE sat = 3V Max D High Speed: tf = 0.1 s Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
|
Original
|
NTE2641
64kHz
100kHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTE2669 Silicon NPN Transistor Horizontal Deflection High Speed Switch TO3P Full Pack Description: The NTE2669 is a Horizontal Deflection Output for High Resolution Display−Color TV’s in High Speed Switching Applications. Features: D High Voltage D Low Saturation Voltage
|
Original
|
NTE2669
NTE2669
|
PDF
|
IFR 630 MF
Abstract: 4-bit parity checker mark/space odd/even DAP7 50 led flasher circuit with pdf format f2f decoder ic 2203F xck-p 5.5v 1.0f body marking MCL CSTCR4M00G55A-R0
Text: ST92F124xx ST92F150Cxx ST92F150JDV1 ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD • Memories – Internal Memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
|
Original
|
ST92F124xx
ST92F150Cxx
ST92F150JDV1
ST92F250CV2
8/16-bit
J1850
14x20
LQFP100
14x14
PQFP100
IFR 630 MF
4-bit parity checker mark/space odd/even
DAP7
50 led flasher circuit with pdf format
f2f decoder ic
2203F
xck-p
5.5v 1.0f
body marking MCL
CSTCR4M00G55A-R0
|
PDF
|
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: diode MARKING f54 stl motor control 64 lead
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
|
Original
|
ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
LQFP64
14x14
PQFP100
14x20
LQFP100
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
diode MARKING f54
stl motor control 64 lead
|
PDF
|
diode V6 96
Abstract: B-429 transistor
Text: U 429 B - F P - U 430 B - F P ITSyBPUKIKilNi e le c tro n ic Creative Technologies DR IV ER FOR IR TR AN S M I T T E R D I OD ES CUR RE NT SINK Technology: Bi po la r Features: o Constant current for IR signal 320 mA o Un de rvoltage control with in dicator dr iver
|
OCR Scan
|
|
PDF
|
|
|
BD429
Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in
|
OCR Scan
|
fl23Sfc
Q62702-D1069
BD429
fnb33
D1069
Q62702-D1069
fcdc
2SC 102
bD 106 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Transistors SMBT 6428 SMBT 6429 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6428 SMBT 6429
|
OCR Scan
|
Q68000-A8321
Q68000-A8322
OT-23
|
PDF
|
2SA429
Abstract: C780A u225 c011m 2SA429-O 2SA42 Produced by Perfect Crystal Device Technology nztl IR00
Text: /UD>PNP=*ffii0Bh5:/S>;*5> PCT7DÍC LICON PNP TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS), iiif INDUSTRIAL APPLICATIONS o •= • 9 -y « & a m o N ix ie Tube D r iv e r A p p lic a tio n s o H igh V o lta g e S w itc h in g Applications- ; : V C B0 =-150V
|
OCR Scan
|
-150V
2sa429Â
-251C
2SA429
C780A
u225
c011m
2SA429-O
2SA42
Produced by Perfect Crystal Device Technology
nztl
IR00
|
PDF
|
MRC 453
Abstract: No abstract text available
Text: am sm u t R F P r o je c ts M * ic r o s e m i 140CommerceDrive Montgomeryville, PA18936-1913 Tel: 215 631-9840 ^ , SD 1429 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C, MOBILE APPLICATIONS C U S S C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN COMMON EMITTER
|
OCR Scan
|
450-512MHz
J30AREJ
MRC 453
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSR2111 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R=22K f!) • Complement to KSR1111 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
|
OCR Scan
|
KSR2111
KSR1111
OT-23
0024TÃ
|
PDF
|
MMCFA43
Abstract: No abstract text available
Text: MMŒA93 SILICON FLIP-CHIP PNP HIGH-VOLTAGE TRANSISTOR F lip -C tip — PNP silicon annular transistor designed fo r applications requiring high breakdown voltages w ith lo w saturation voltages. • C om plem ent to NPN T ype M M C FA43 MAXIMUM RATINGS Emitter-Base Voltage
|
OCR Scan
|
MMCFA43
160Vdc,
MMCFA43
|
PDF
|
B-429 transistor
Abstract: No abstract text available
Text: KSR2102 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri “ 1<M, R2=10kß) • Com plem ent to KSR1102 ABSOLUTE MAXIMUM RATINGS (TA=25t)
|
OCR Scan
|
KSR2102
KSR1102
-10mA,
-100M
-10mA
B-429 transistor
|
PDF
|
928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
|
OCR Scan
|
2SC5008
2SC5008
928 606 402 00
|
PDF
|
marking LG sot-23
Abstract: SOT-23 MARKING mn
Text: Central" CMPTA14E Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR The Central Semiconductor CMPTA14E is an Enhanced version of the CMPTA14 NPN Darlington Transistor. This device is manufac tured by the epitaxial planar process, epoxy
|
OCR Scan
|
CMPTA14E
OT-23
CMPTA14E
CMPTA14
CP307
20-February
OT-23
marking LG sot-23
SOT-23 MARKING mn
|
PDF
|
PS502
Abstract: PS-502
Text: A C INTERFACE INC IDE D | 0023333 00QQ4?E fl | _ PS502 Ssm*i STANLEY PHOTO TRANSISTOR unit : mm+ 0.2 • Package Dimensions ■ FEATURES (1) Midget resin package of 3 .4 mm dia. permits use in lim ited space {2} High photocurrent (Typ. 15m A at Ee = 10m W /cm 2 )
|
OCR Scan
|
PS502
10mW/cm2)
PS502
PS-502
|
PDF
|
