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    B1009 TRANSISTOR Search Results

    B1009 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B1009 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT December 2006 - Rev 12-Dec-06 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package


    Original     		PDF B1009-QT 12-Dec-06 XB1009-QT

    B1009

    Abstract: amplifier TRANSISTOR 12 GHZ qfn 3x3 16L XB1009-QT XB1009-QT-0G00 XB1009-QT-EV1 XP1022-QF XU1002 XU1002-QD
    Text: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package


    Original     		PDF B1009-QT 08-Feb-07 XB1009-QT B1009 amplifier TRANSISTOR 12 GHZ qfn 3x3 16L XB1009-QT-0G00 XB1009-QT-EV1 XP1022-QF XU1002 XU1002-QD

    B1009

    Abstract: DM6030HK TS3332LD XB1004 XB1009-BD XU1002 B1009-BD
    Text: 14.0-30.0 GHz GaAs MMIC Buffer Amplifier B1009-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 18.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF B1009-BD 05-Feb-07 MIL-STD-883 XB1009-BD-000V XB1009-BD-EV1 XB1009-BD B1009 DM6030HK TS3332LD XB1004 XU1002 B1009-BD

    B1009

    Abstract: XB1009-QT XB1009-QT-0G00 XB1009-QT-EV1 XP1022-QF XU1002 XU1002-QD XB1004-QC
    Text: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package


    Original     		PDF B1009-QT 08-Feb-07 XB1009-QT B1009 XB1009-QT-0G00 XB1009-QT-EV1 XP1022-QF XU1002 XU1002-QD XB1004-QC

    Untitled

    Abstract: No abstract text available
    Text: 14.0-30.0 GHz GaAs MMIC Buffer Amplifier B1009-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 18.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF B1009-BD 05-Feb-07 MIL-STD-883 XB1009-BD-000V XB1009-BD-EV1 XB1009-BD

    b1009 transistor

    Abstract: B1009 ba656 ba9700-series BA6566
    Text: Regulator ICs Switching regulator for DC-DC converters BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF and BA9700AFV are switching regulators that use a pulse width modulation PWM system. They use a transistor switch to stabilize the output voltage. By the use of the transistor, power loss is decreased, fluctnation efficiency is improved, and the circuit is made more


    Original     		PDF BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF BA9700AFV 470kHz) BU8874lBU8874F BU8874 BU8874F 03iOl b1009 transistor B1009 ba656 ba9700-series BA6566

    ecg semiconductors master replacement guide

    Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
    Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei


    Original     		PDF