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    B1182 TRANSISTOR Search Results

    B1182 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    B1182

    Abstract: Transistor B1182 B1182 transistor BTB1182J3 power transistors B1182 BTD1758J3 btd1758
    Text: CYStech Electronics Corp. Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1182J3 Features • Low VCE sat , VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics


    Original     		PDF C812J3 BTB1182J3 BTD1758J3 O-252 UL94V-0 B1182 Transistor B1182 B1182 transistor BTB1182J3 power transistors B1182 BTD1758J3 btd1758