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    B1182 TRANSISTOR Search Results

    B1182 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    B1182 TRANSISTOR Datasheets Context Search

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    B1182

    Abstract: Transistor B1182 B1182 transistor BTB1182J3 power transistors B1182 BTD1758J3 btd1758
    Text: CYStech Electronics Corp. Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1182J3 Features • Low VCE sat , VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics


    Original     		C812J3 BTB1182J3 BTD1758J3 O-252 UL94V-0 B1182 Transistor B1182 B1182 transistor BTB1182J3 power transistors B1182 BTD1758J3 btd1758 PDF