ZENER B18
Abstract: b18 zener
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
|
Original
|
PDF
|
BZX55B
ZENER B18
b18 zener
|
BZX55
Abstract: BZX55-B82 ZENER B18 zener b27 BZX 3,3 B2V7 BZX55-B15 BZX55B Zener B12 b2v4
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
|
Original
|
PDF
|
BZX55B
BZX55
BZX55-B82
ZENER B18
zener b27
BZX 3,3
B2V7
BZX55-B15
BZX55B
Zener B12
b2v4
|
BZX55
Abstract: zener b27 b16 zener b2v4 B20 zener diode glass BZX55B zener BZX 180 b9v1 B2V7
Text: BZX55B min. 27.5 SILICON PLANAR ZENER DIODES max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.5 Glass case JEDEC DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 oC Parameter Symbol Power Dissipation Ptot Value Unit 1) mW
|
Original
|
PDF
|
BZX55B
DO-34
BZX55
zener b27
b16 zener
b2v4
B20 zener diode glass
BZX55B
zener BZX 180
b9v1
B2V7
|
BZX55
Abstract: BZX55-B15 zener b27 bzx b27 bzx55 024 BZX55B equivalent ZENER B18 zener B51 BZX b18 bzx b22
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
|
Original
|
PDF
|
BZX55B
BZX55
BZX55-B15
zener b27
bzx b27
bzx55 024
BZX55B equivalent
ZENER B18
zener B51
BZX b18
bzx b22
|
bzx55 024
Abstract: zener b27 ZENER B18 b16 zener BZX55 bzx b27 b2v4 b5v6 diode zener B16 BZX55B
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
|
Original
|
PDF
|
BZX55B
bzx55 024
zener b27
ZENER B18
b16 zener
BZX55
bzx b27
b2v4
b5v6
diode zener B16
BZX55B
|
MBC50-10B12
Abstract: 68b1 MBC50-8B1 MBC50-20B12 MBC50-82B1
Text: Capacitors: MNOS Series Bare Die • Low leakage current The Aeroflex / Metelics MIS capacitors utlize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low leakage current and insertion loss with excellent long-term stability. The
|
Original
|
PDF
|
MC2DXXX010-010
MC2DXXX01
MC2DXXX020-020
MSS20
MSS39
MBC50-10B12
68b1
MBC50-8B1
MBC50-20B12
MBC50-82B1
|
Power DIODE A30
Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
Text: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs
|
Original
|
PDF
|
QS34XR245
32-Bit
QS34XR245Q3
QS3R245
80-pin
QS34XR245
MDSL-00253-02
Power DIODE A30
b12 diode
DIODE B12 41
QS3R245
|
diode b29
Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
Text: QS34XVH245 QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS34XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND
|
Original
|
PDF
|
QS34XVH245
32-Bit
150MHz
80-pin
QS34XVH245
MDSL-00273-03
diode b29
B14 diode on semiconductor
b12 diode
DIODE B12 51
DIODE B21
DIODE B31
a30 DIODE
DIODE A30
|
DIODE B12 51
Abstract: TSG60N100CE IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A
Text: TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers
|
Original
|
PDF
|
TSG60N100CE
O-264
TSG60N100CE
25pcs
DIODE B12 51
IGBT 1000V .200A
tsg60n100
B12 68 diode
IGBT 1000V 60A
|
diode A23
Abstract: QS3245 QS34X2245 QS34X245
Text: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs
|
Original
|
PDF
|
QS34X245,
QS34X2245
32-Bit
QS34X245
QS34X245
QS3245
QS34X2245
80-pin
diode A23
QS3245
|
Untitled
Abstract: No abstract text available
Text: IDTQS34X2245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES FEATURES: • • • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc
|
Original
|
PDF
|
IDTQS34X2245
32-BIT
IDTQS34X2245
80-pin
L0201-02,
|
TA141
Abstract: diode td13 TD-101 TA22 TD-121 TD13 TB-23 BU7988KVT g171
Text: BU7988KVT LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT No.12057EAT05 ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number by 3(1/3) or less. The
|
Original
|
PDF
|
BU7988KVT
56bit
12057EAT05
150MHz
112MHz
224MHz)
TQFP100V
R1120A
TA141
diode td13
TD-101
TA22
TD-121
TD13
TB-23
BU7988KVT
g171
|
BZX55-B200
Abstract: BZX55B BZX55B2V0 BZX55B2V2 BZX55B2V4 BZX55B2V7 BZX55B3V0 BZX55B3V3 BZX55B3V6 BZX55B3V9
Text: BZX55B SILICON PLANAR ZENER DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Power Dissipation Ptot
|
Original
|
PDF
|
BZX55B
DO-35
BZX55-B200
BZX55B
BZX55B2V0
BZX55B2V2
BZX55B2V4
BZX55B2V7
BZX55B3V0
BZX55B3V3
BZX55B3V6
BZX55B3V9
|
TA141
Abstract: HSYNC, VSYNC, DE TB-141
Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT No.12057EAT05 ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number by 3(1/3) or less. The
|
Original
|
PDF
|
56bit
BU7988KVT
12057EAT05
150MHz
112MHz
224MHz)
TQFP100V
R1120A
TA141
HSYNC, VSYNC, DE
TB-141
|
|
|
bzx b27
Abstract: BZX55B27 13 BZX bzx 180 BZX 2.7 v BZX 5.1 15 BZX 18 BZX BZX55B equivalent BZX55B
Text: BZX55B SILICON PLANAR ZENER DIODES Max. 0.5 Max. 0.45 Min. 27.5 Max. 1.9 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX Max. 3.9 ST Black Part No. XXX Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC
|
Original
|
PDF
|
BZX55B
DO-35
DO-34
bzx b27
BZX55B27
13 BZX
bzx 180
BZX 2.7 v
BZX 5.1
15 BZX
18 BZX
BZX55B equivalent
BZX55B
|
BU7988KVT
Abstract: DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15
Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number
|
Original
|
PDF
|
56bit
BU7988KVT
150MHz
112MHz
224MHz)
TQFP100V
500pcs
08T241A
BU7988KVT
DIODE B12 51
TQFP100V Package
TA10
TA12
TA16
TQFP100V
B12 2N DIODE
diode b22
diode td15
|
ZENER B18
Abstract: b16 zener zener b27 zener 5B6 5B1 IR zener 5B1 zener 6b8 zener 3b9 zener B13 zener b30
Text: MM3Z2B4 . MM3B47 200 mW - 2% MM3Z2B4 . MM3B47 (200 mW - 2%) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2012-08-22 Maximum power dissipation Maximale Verlustleistung 1.7±0.1 1±0.1 Nominal Z-voltage – Nominale Z-Spannung
|
Original
|
PDF
|
MM3B47
OD-323
UL94V-0
ZENER B18
b16 zener
zener b27
zener 5B6
5B1 IR
zener 5B1
zener 6b8
zener 3b9
zener B13
zener b30
|
Untitled
Abstract: No abstract text available
Text: 2BZX84B3V0 . 2BZX84B47 300 mW 2BZX84B3V0 . 2BZX84B47 (300 mW) Surface mount Silicon Planar Dual Zener Diodes Silizium-Planar-Zener-Doppel-Dioden für die Oberflächenmontage Version 2014-04-04 Maximum power dissipation Maximale Verlustleistung 2.9 1.1
|
Original
|
PDF
|
2BZX84B3V0
2BZX84B47
OT-23
O-236)
UL94V-0
|
Untitled
Abstract: No abstract text available
Text: BZX84B2V4 . BZX84B47 300 mW BZX84B2V4 . BZX84B47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-01-03 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung
|
Original
|
PDF
|
BZX84B2V4
BZX84B47
OT-23
O-236)
UL94V-0
|
IDTQS34XVH2245
Abstract: QS34XVH2245
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
|
Original
|
PDF
|
IDTQS34XVH2245
32-BIT
10MHz;
34XVH2245
80-Pin
IDTQS34XVH2245
QS34XVH2245
|
Untitled
Abstract: No abstract text available
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
|
Original
|
PDF
|
IDTQS34XVH245
32-BIT
500MHz
80-Pin
34XVH245
|
Untitled
Abstract: No abstract text available
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
|
Original
|
PDF
|
IDTQS34XVH245
32-BIT
IDTQS34XVH245
500MHz
80-Pin
34XVH245
|
Untitled
Abstract: No abstract text available
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
|
Original
|
PDF
|
IDTQS34XVH2245
32-BIT
IDTQS34XVH2245
80-Pin
34XVH2245
|
Untitled
Abstract: No abstract text available
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
|
Original
|
PDF
|
IDTQS34XVH2245
32-BIT
80-Pin
34XVH2245
|
