Untitled
Abstract: No abstract text available
Text: Datasheet DC Brushless Fan Motor Drivers Multifunction Single-phase Full-wave Fan Motor Driver BD6974FV-LB General Description Package SSOP-B16 This is the product guarantees long time support in Industrial market. BD6974FV-LB is a pre-driver that controls the motor
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BD6974FV-LB
SSOP-B16
BD6974FV-LB
BD6973FV-LB
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Untitled
Abstract: No abstract text available
Text: Datasheet DC Brushless Fan Motor Drivers Multifunction Single-phase Full-wave Fan Motor Driver BD6973FV-LB General Description Package SSOP-B16 This is the product guarantees long time support in Industrial market. BD6973FV-LB is a pre-driver that controls the motor
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BD6973FV-LB
SSOP-B16
BD6973FV-LB
BD6974FV-LB
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PDF
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Untitled
Abstract: No abstract text available
Text: Datasheet DC Brushless Fan Motor Drivers Multifunction Single-phase Full-wave Fan Motor Driver BD6974FV-LB General Description Package SSOP-B16 This is the product guarantees long time support in Industrial market. BD6974FV-LB is a pre-driver that controls the motor
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Original
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BD6974FV-LB
SSOP-B16
BD6974FV-LB
BD6973FV-LB
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PDF
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Untitled
Abstract: No abstract text available
Text: Datasheet DC Brushless Fan Motor Drivers Multifunction Single-phase Full-wave Fan Motor Driver BD6973FV-LB General Description Package SSOP-B16 This is the product guarantees long time support in Industrial market. BD6973FV-LB is a pre-driver that controls the motor
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Original
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BD6973FV-LB
SSOP-B16
BD6973FV-LB
BD6974FV-LB
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PDF
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Untitled
Abstract: No abstract text available
Text: Si 4 7 0 3 - B16 B R O A D C A S T F M R A D I O TU N E R FOR P O R TA B L E A P P L I C A T I O N S Features ns ig d fo Portable navigation Consumer electronics de Description en The Si4703 integrates the complete tuner function from antenna input to
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AN231 silicon
Abstract: AN231 AN-284 si4702 code format AN284 SI4702-B16 Si4700 Silicon Laboratories an284
Text: Si 4 7 0 2 - B16 B R O A D C A S T F M R A D I O TU N E R FOR P O R TA B L E A P P L I C A T I O N S Features ns ig fo Portable navigation Consumer electronics de Description en The Si4702 integrates the complete tuner function from antenna input to stereo audio output for FM broadcast radio reception.
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Si4702
Si4702-GM
AN231 silicon
AN231
AN-284
si4702 code format
AN284
SI4702-B16
Si4700
Silicon Laboratories an284
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AN231 silicon
Abstract: Si4701 SI4703 Silicon Laboratories SI4703 AN231 "AN284: Si4700/01/02/03 Seek Adjustability and Settings
Text: Si 4 7 0 3 - B16 B R O A D C A S T F M R A D I O TU N E R F O R P O R TA B L E A P P L I C A T I O N S Features This data sheet applies to Si4703 Firmware 16 Worldwide FM band support 76–108 MHz Digital low-IF receiver Frequency synthesizer with
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Si4703
20-pin
37tial
AN231 silicon
Si4701
Silicon Laboratories SI4703
AN231
"AN284: Si4700/01/02/03 Seek Adjustability and Settings
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PDF
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AN231 silicon
Abstract: AN-231 AN231
Text: Si 4 7 0 2 - B16 B R O A D C A S T F M R A D I O TU N E R F O R P O R TA B L E A P P L I C A T I O N S Features This data sheet applies to Si4702 Firmware 16 Worldwide FM band support 76–108 MHz Digital low-IF receiver Frequency synthesizer with
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Si4702
20-pin
35tial
AN231 silicon
AN-231
AN231
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C532 diode
Abstract: b16/41289
Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
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FP50R06W2E3
14BBFB'
A4F32
F223B
1231423567896A4BC3D6E23F
61F7DC
C532 diode
b16/41289
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PDF
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MPND4005
Abstract: ir 0218 HPND-4005 beam lead pin diode
Text: Planar Beam Lead PIN Diode For High Isolation Description Features Metelics’ Planar Beam Lead PIN Diodes provide low microwave capacitance with exceptional lead strength. The high beam strength offers the users superior assemply yield. The Oxide / Nitride / Polyimide Passivation offers
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HPND-4005
MPND4005-B1
MPND4005-B16
A17005
MPND4005
ir 0218
beam lead pin diode
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3B MARKING
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
1E-02
1E-03
1E-04
1E-05
1E-06
3B MARKING
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PDF
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marking B16 diode
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
1E-02
1E-03
1E-04
1E-05
1E-06
marking B16 diode
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403D
Abstract: MBRA160T3
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
r14525
MBRA160T3/D
403D
MBRA160T3
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403D
Abstract: MBRA160T3 3B marking SMA MARKING 14
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
r14525
MBRA160T3/D
403D
MBRA160T3
3B marking
SMA MARKING 14
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MBRA160T3G
Abstract: SMA CASE 403D-02 footprint Diode SMA marking code PB MBRA160T3-D 403D MBRA160T3
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
MBRA160T3G
SMA CASE 403D-02 footprint
Diode SMA marking code PB
MBRA160T3-D
403D
MBRA160T3
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PDF
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403D
Abstract: MBRA160T3 MBRA160T3G
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
403D
MBRA160T3
MBRA160T3G
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PDF
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diode b29
Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
Text: QS34XVH245 QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS34XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND
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QS34XVH245
32-Bit
150MHz
80-pin
QS34XVH245
MDSL-00273-03
diode b29
B14 diode on semiconductor
b12 diode
DIODE B12 51
DIODE B21
DIODE B31
a30 DIODE
DIODE A30
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MBRA160T3G
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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MBRA160T3
MBRA160T3/D
MBRA160T3G
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PDF
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Untitled
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
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Power DIODE A30
Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
Text: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs
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QS34XR245
32-Bit
QS34XR245Q3
QS3R245
80-pin
QS34XR245
MDSL-00253-02
Power DIODE A30
b12 diode
DIODE B12 41
QS3R245
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MBRA160T3-D
Abstract: MBRA160T3G 403D MBRA160T3
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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MBRA160T3
MBRA160T3/D
MBRA160T3-D
MBRA160T3G
403D
MBRA160T3
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PDF
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Untitled
Abstract: No abstract text available
Text: IDTQS34X2245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES FEATURES: • • • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc
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IDTQS34X2245
32-BIT
IDTQS34X2245
80-pin
L0201-02,
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Untitled
Abstract: No abstract text available
Text: ATEI HDR2606 2 VA Output, Microprocessor Compatible 16-bit Digital-to-Resolver Converter Features • Fully protected 2 VA output current limiting (short circuit proof) (voltage feedback transients) • Optional Zener Diode output (additional protection against inductive
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OCR Scan
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HDR2606
16-bit
16-bit)
MIL-STD-883
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PDF
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Untitled
Abstract: No abstract text available
Text: S QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot SwaP Applications HotSwitch ductor Inc q s 34xvh 245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state
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OCR Scan
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32-Bit
34xvh
50MHz
80-pin
QS34XVH245
QS34Xropagation
MDSL-00273-03
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PDF
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