Contextual Info: IN EN IN A2 EN A2 B2 GND GND B2 OUT Bottom View Top View Top Marking

A1 marking

Contextual Info: OUT OUT A2 B2 B2 A1 B1 GND IN VCM IN A2 EN BOTTOM VIEW TOP MARKING

pic16c926

Abstract: PTC02 circuit diagram of LCD connection to pic PIC16C925 pic16c926-i
Contextual Info: PIC16C925/926 PIC16C925/926 Rev. B2 Silicon Data Sheet Errata The PIC16C925/926 Rev. B2 parts you have received conform functionally to the Device Data Sheet (DS39544A), except for the anomalies described below. Revision B2 parts can be identified by the following

d5038

Abstract: transistor d5038 equivalent transistor d5038 sj 2252 ssd1325 GE 048 TRANSISTOR SSD1325T6 d5038 test 50/transistor d5038 equivalent
Contextual Info: Crystalfontz America, Incorporated GRAPHIC OLED MODULE SPECIFICATIONS Shown actual size. Crystalfontz Model Number CFAL12864Z-Y-B2 Hardware Version Revision 2.2, May 2009 Data Sheet Version Revision 1.0 May 2009 Product Pages www.crystalfontz.com/product/CFAL12864Z-Y-B2.html

transistor d5038 equivalent

Abstract: d5038 transistor d5038 ssd1325 sj 2252 SSD1325Z 12864G technical library AVR SSD1325T6 29 K 104-400 E3
Contextual Info: Crystalfontz America, Incorporated GRAPHIC OLED MODULE SPECIFICATIONS Shown actual size. Crystalfontz Model Number CFAL12864Z-G-B2 Hardware Version Revision 2.2, May 2009 Data Sheet Version Revision 1.0 May 2009 Product Pages www.crystalfontz.com/product/CFAL12864Z-G-B2.html

KEP32

Abstract: HEP32 HP32 MC100 MC100EP32 MC10EP32 100EP32 power transistor 3055
Contextual Info: MC10EP32, MC100EP32 3.3V / 5VĄECL B2 Divider The MC10/100EP32 is an integrated B2 divider with differential CLK inputs. The VBB pin, an internally generated voltage supply, is available to this device only. For single–ended input conditions, the unused

KEP32

Abstract: MC100EP32 MC10EP32 HEP32 HP32 MC100
Contextual Info: MC10EP32, MC100EP32 3.3V / 5VĄECL B2 Divider The MC10/100EP32 is an integrated B2 divider with differential CLK inputs. The VBB pin, an internally generated voltage supply, is available to this device only. For single–ended input conditions, the unused

PIC16F877A PIN diagram

Abstract: PIC 877A PIC16F874A/877A PIC16F874A/877A DATASHEET PIC 16 F 877A c programming PIC16F877A circuit diagram PIC16F87XA PIC16f877a example code spi PIC16F877A PIC16F874A
Contextual Info: PIC16F87XA PIC16F87XA Rev. B2 Silicon/Data Sheet Errata The PIC16F87XA Rev. B2 parts you have received conform functionally to the Device Data Sheet DS39582A , except for the anomalies described below. All the problems listed here will be addressed in future

Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD201-B2-03LRH Bi-directional Dual Diode for ESD/Transient Protection ESD201-B2-03LRH Data Sheet Revision 1.1, 2012-09-26 Final Power Management & Multimarket Edition 2012-09-26 Published by Infineon Technologies AG

Contextual Info: MC10EP32, MC100EP32 3.3V / 5VĄECL B2 Divider The MC10/100EP32 is an integrated B2 divider with differential CLK inputs. The VBB pin, an internally generated voltage supply, is available to this device only. For single–ended input conditions, the unused

A1560

Contextual Info: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description The MC10/100EP32 is an integrated B2 divider with differential CLK inputs. The VBB pin, an internally generated voltage supply, is available to this device only. For single−ended input conditions, the unused

Contextual Info: FMB200 PNP Multi-Chip General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Block Diagram C2 E1 C2 B2 E1 E2 C1 B1 C1 B2 E2 pin #1 B1 SuperSOT -6

Contextual Info: FMBA56 PNP Multi-Chip General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Block Diagram C2 E1 C2 B2 E1 E2 C1 B1 C1 B2 E2 pin #1 B1 SuperSOT -6

Contextual Info: K7J323682M K7J321882M 1Mx36 & 2Mx18 DDR II SIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. July, 15 2001 Advance 0.1 1. Pin name change from DLL to Doff 2. Update JTAG test conditions.

Contextual Info: K7J323682M K7J321882M 1Mx36 & 2Mx18 DDR II SIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. July, 15 2001 Advance 0.1 1. Pin name change from DLL to Doff 2. Update JTAG test conditions.

C101E

Contextual Info: HD3SS3412 www.ti.com SLAS828A – FEBRUARY 2012 – REVISED FEBRUARY 2012 4-Channel High-Performance Differential Switch 1 B1+ B1C0+ NC Top View RUA Package GND VDD A1+ C0C1+ A1NC C1VDD SEL GND B2+ A2+ B2- A2- B3+ VDD GND B3C2+ GND Pad A3+ C2- GND 21 VDD 22

"MATERIAL DECLARATION SHEET"

Abstract: K7I321882M-FC16 marking 6J reset 7KB NC
Contextual Info: K7I323682M K7I321882M 1Mx36 & 2Mx18 DDRII CIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit DDRII CIO b2 SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to 1.5V~1.8V.

5b1x

Abstract: G552B1TA1U mar 705 sc70-5 G551 G552A2TA1U 85ma
Contextual Info: G551/G552 Global Mixed-mode Technology Inc. Current-Limit Switches Features „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ General Description 700mΩ On-Resistance 2 Versions of Current Limits, 85mA G551B1/ B2 & G552B1/B2 and 170mA (G551A1/A2 & G552A1/ A2)

Contextual Info: HD3SS3412 www.ti.com SLAS828A – FEBRUARY 2012 – REVISED FEBRUARY 2012 4-Channel High-Performance Differential Switch 1 B1+ B1C0+ NC Top View RUA Package GND VDD A1+ C0C1+ A1NC C1VDD SEL GND B2+ A2+ B2- A2- B3+ VDD GND B3C2+ GND Pad A3+ C2- GND 21 VDD 22

C101E

Abstract: HD3SS3412
Contextual Info: HD3SS3412 www.ti.com SLAS828A – FEBRUARY 2012 – REVISED FEBRUARY 2012 4-Channel High-Performance Differential Switch 1 B1+ B1C0+ NC Top View RUA Package GND VDD A1+ C0C1+ A1NC C1VDD SEL GND B2+ A2+ B2- A2- B3+ VDD GND B3C2+ GND Pad A3+ C2- GND 21 VDD 22

Contextual Info: HD3SS3412 www.ti.com SLAS828B – FEBRUARY 2012 – REVISED NOVEMBER 2013 4-Channel High-Performance Differential Switch 1 NC VDD A1+ C0C1+ A1NC C1VDD SEL GND B2+ A2+ B2- A2- B3+ VDD GND B3C2+ GND Pad A3+ C2- GND 21 VDD 22 18 21 C3+ C3- 17 A3GND 38 39 42 B1+

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363