B20200
Abstract: b20200 diode
Text: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
|
Original
|
PDF
|
MBRF20200CT
AN1040.
B20200
b20200 diode
|
B20200
Abstract: B20200 on
Text: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
PDF
|
MBRF20200CT
AN1040.
B20200
B20200 on
|
b20200
Abstract: b20200 diode 221D AN1040 MBRF20200CT 2-2-1D
Text: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide
|
Original
|
PDF
|
MBRF20200CT
r14525
MBRF20200CT/D
b20200
b20200 diode
221D
AN1040
MBRF20200CT
2-2-1D
|
B20200
Abstract: b20200 diode
Text: MBRB20200CT SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V
|
Original
|
PDF
|
MBRB20200CT
B20200
b20200 diode
|
B20200
Abstract: b20200 diode MBRB20200CT (B20200)
Text: MBRB20200CT Preferred Device SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power supplies and converters with up to 48 volt
|
Original
|
PDF
|
MBRB20200CT
B20200
b20200 diode
MBRB20200CT (B20200)
|
b20200 diode
Abstract: B20200 SCHOTTKY BARRIER RECTIFIER aka B20200 on
Text: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They
|
Original
|
PDF
|
MBR20200CT
25C/W
165C/W
b20200 diode
B20200
SCHOTTKY BARRIER RECTIFIER aka
B20200 on
|
b20200 diode
Abstract: B20200 SCHOTTKY BARRIER RECTIFIER aka
Text: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state- of- the- art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs.
|
Original
|
PDF
|
MBR20200CT
25C/W
165C/W
b20200 diode
B20200
SCHOTTKY BARRIER RECTIFIER aka
|
Untitled
Abstract: No abstract text available
Text: MBRB20200CT SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V
|
Original
|
PDF
|
MBRB20200CT
MBRB20200CT/D
|
b20200
Abstract: b20200 diode MBR20200CT B202
Text: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs.
|
Original
|
PDF
|
MBR20200CT
r14525
MBR20200CT/D
b20200
b20200 diode
MBR20200CT
B202
|
b20200
Abstract: MBRB20200CT MBRB20200CTT4
Text: MBRB20200CT SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V
|
Original
|
PDF
|
MBRB20200CT
MBRB20200CT/D
b20200
MBRB20200CT
MBRB20200CTT4
|
b20200 diode
Abstract: No abstract text available
Text: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs.
|
Original
|
PDF
|
MBR20200CT
r14525
MBR20200CT/D
b20200 diode
|
221D-03
Abstract: No abstract text available
Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
|
Original
|
PDF
|
MBRF20200CT
MBRF20200CT/D
221D-03
|
b20200
Abstract: b20200 diode MBR20200CTG 1505C MBR20200CT
Text: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They
|
Original
|
PDF
|
MBR20200CT
MBR20200CT/D
b20200
b20200 diode
MBR20200CTG
1505C
MBR20200CT
|
B20200
Abstract: MBRB20200CT MBRB20200CTT4 SMD310
Text: MBRB20200CT Preferred Device SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power supplies and converters with up to 48 volt
|
Original
|
PDF
|
MBRB20200CT
MBRB20200CT/D
B20200
MBRB20200CT
MBRB20200CTT4
SMD310
|
|
|
B20200G AKA
Abstract: B20200G
Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
|
Original
|
PDF
|
MBRF20200CT
MBRF20200CT/D
B20200G AKA
B20200G
|
B20200G
Abstract: B20200G AKA b20200 b20200 diode B2020 221D-03 1505C 221D MBRF20200CT MBRF20200CTG
Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
|
Original
|
PDF
|
MBRF20200CT
MBRF20200CT/D
B20200G
B20200G AKA
b20200
b20200 diode
B2020
221D-03
1505C
221D
MBRF20200CT
MBRF20200CTG
|
B20200
Abstract: hex head screws Rectifier 6 amp 200 volt b20200 diode 10 amp rectifier, TO 220 all silicon metal rectifier diode product List RECTIFIER DIODES Motorola DATA BOOK single phase fully controlled rectifier 221D AN1040
Text: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF20200CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features
|
Original
|
PDF
|
MBRF20200CT/D
MBRF20200CT
B20200
hex head screws
Rectifier 6 amp 200 volt
b20200 diode
10 amp rectifier, TO 220
all silicon metal rectifier diode product List
RECTIFIER DIODES Motorola DATA BOOK
single phase fully controlled rectifier
221D
AN1040
|
B20200G
Abstract: B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor
Text: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
|
Original
|
PDF
|
MBRF20200CT
MBRF20200CT/D
B20200G
B20200G AKA
b20200
SCHOTTKY BARRIER RECTIFIER aka
221D
MBRF20200CTG
1505C
MBRF20200CT
B2020
RECTIFIER DIODES ON Semiconductor
|
B20200G
Abstract: No abstract text available
Text: MBRJ20200CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
|
Original
|
PDF
|
MBRJ20200CTG
MBRJ20200CT/D
B20200G
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE S c h o ttk y P o w e r R e c tifie rs M BRF20200CT M o to ro la P referre d D evice The SW ITCHM O DE Power R ectifier em ploys the Schottky Barrier principle in a large area m e ta l-to -siilco n power diode. S ta te -o f-th e -a rt geom etry features
|
OCR Scan
|
PDF
|
AN1040.
|
Untitled
Abstract: No abstract text available
Text: M O TO RO LA Order this document by MBR20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Dual Schottky Rectifier MBR20200CT . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power
|
OCR Scan
|
PDF
|
MBR20200CT/D
MBR20200CT
3b7255
-220AB)
|
B20200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R20200CT Switchmode Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This s ta te -o f-th e -a rt device is designed for use in high frequency switching power supplies
|
OCR Scan
|
PDF
|
R20200CT
MBR20200CT
B20200
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA S w itchm ode P o w er M BRB20200CT Dual Schottky Rectifier M otorola Preferred Device . . . using Schottky B arrier te ch n olo gy with a platinum b arrier metal, This s ta te -o f-th e -a rt device is designed for use in high frequency switching pi3wer
|
OCR Scan
|
PDF
|
BRB20200CT
MBRB20200CT
|
BRF20200CT
Abstract: Schottky com anode TO220
Text: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF20200CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features
|
OCR Scan
|
PDF
|
MBRF20200CT/D
BRF20200CT
Schottky com anode TO220
|
