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    eeprom 24C16 5 pin

    Abstract: 24C16-S 24C08 CHIP 8-PIN 24c16 24c16 EEPROM 24c16 wp DATA SHEET 24C16 24c08 wp 24C16 application Q67100-H3226
    Text: • ÔE35h05 □□TûflTfl h3S ■ S IE M E N S 8/16 K bit 1024/2048 x 8 bit Serial C M O S EE P R O M s, I 2C Synchro n o us 2-W ire Bus S L x 2 4C 08 /1 6 Preliminary Features I • Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages x 16 bytes


    OCR Scan     		PDF 24C08/16 235b05 eeprom 24C16 5 pin 24C16-S 24C08 CHIP 8-PIN 24c16 24c16 EEPROM 24c16 wp DATA SHEET 24C16 24c08 wp 24C16 application Q67100-H3226

    BUZ102SL

    Abstract: E3045 Q67040-S4010-A2 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ
    Text: BUZ102SL Infineon te c h n o lo g ie } » m p f°v e d Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f l DS on 0.015 n 47 A t> V 55 • Logic Level


    OCR Scan     		PDF 102SL BUZ102SL_ P-TQ220-3-1 Q67040-S4010-A2 BUZ102SL E3045A P-TQ263-3-2 Q67040-S4010-A6 E3045 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ

    A4t 29 smd

    Abstract: smd a4t
    Text: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1310-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T A4t 29 smd smd a4t

    Untitled

    Abstract: No abstract text available
    Text: SPD 13N05L Infineon technologies w » p f°v e d SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancem ent mode Drain-Source on-state resistance ^DSion Continuous drain current b • Avalanche rated 55 V 0.064


    OCR Scan     		PDF 13N05L SPD13N05L P-T0252 Q67040-S4124 SPU13N05L P-T0251 Q67040-S4116-A2 S35bQ5 Q133777 SQT-89

    KT 117A

    Abstract: SMD CODE HBA
    Text: BSP 315P I nf ineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Typ Package BSP 315 P SOT-223 Ordering Code Q67042-S4004 Marking


    OCR Scan     		PDF OT-223 BSP315P Q67042-S4004 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T KT 117A SMD CODE HBA

    Untitled

    Abstract: No abstract text available
    Text: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current


    OCR Scan     		PDF 08N05L P-T0252 Q67040-S4134 P-T0251 SPD08N05L SPU08N05L Q67040-S4182-A2 S35bQ5 Q133777 SQT-89

    Untitled

    Abstract: No abstract text available
    Text: BSS98 In fin e o n t*ehnoiogi*i SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type Vbs BSS98 50 V Type BSS98 BSS98 BSS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 0.3 A °DS(on) Package


    OCR Scan     		PDF BSS98 Q62702-S053 Q62702-S517 Q62702-S635 E6288 E6296

    Untitled

    Abstract: No abstract text available
    Text: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6


    OCR Scan     		PDF BSP318S OT-223 Q67000-S127 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    kd smd transistor

    Abstract: No abstract text available
    Text: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated


    OCR Scan     		PDF 28N03L SPD28N03L Q67040-S4139-A2 P-T0252 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L S35bG5 Q133777 SQT-89 kd smd transistor

    smd diode code b54

    Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
    Text: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current


    OCR Scan     		PDF BUZ101S P-T0220-3-1 Q67040-S4013-A2 E3045A P-T0263-3-2 Q67040-S4013-A6 E3045 smd diode code b54 smd transistor c015 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA

    Untitled

    Abstract: No abstract text available
    Text: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1317-A2 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    SMD Transistor t30

    Abstract: transistor SMD t30
    Text: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level


    OCR Scan     		PDF 30N03L SPP30N03L P-T0220-3-1 Q67040-S4737-A2 P-T0263-3-2 Q67040-S4143-A3 SPB30N03L S35bQ5 Q133777 SQT-89 SMD Transistor t30 transistor SMD t30

    28N05L

    Abstract: No abstract text available
    Text: Infineon h te c imPr° n ol o g i Ive<& SPD 28N05L Hosion “ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage '/DS Drain-Source on-state resistance f l DS on) 0.026 Si A 28 t> • Enhancement mode Continuous drain current


    OCR Scan     		PDF 28N05L SPD28N05L SPU28N05L Q67040-S4122 P-T0251 P-T0252 Q67040-S4114-A2 S35bG5 Q133777 SQT-89 28N05L

    Transistor SMD SM 942

    Abstract: No abstract text available
    Text: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30


    OCR Scan     		PDF 30N03 67040-S 144-A -T0251-3-1 146-A S35bQ5 Q133777 SQT-89 B535bQ5 Transistor SMD SM 942

    transistor SMD 1gs

    Abstract: 46n03l smd 1Gs SD-46 Diode
    Text: , • - SPP 46N03L Inf ineon technology SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel ^D S Drain-Source on-state resistance . Enhancement mode f l D S o n Continuous drain current • Avalanche rated 30 V 0 .0 1 2


    OCR Scan     		PDF 46N03L SPP46N03L P-T0220-3-1 Q67040-S4147-A2 SPB46N03L P-T0263-3-2 Q67040-S4743-A2 S35bQ5 Q133777 SQT-89 transistor SMD 1gs 46n03l smd 1Gs SD-46 Diode

    Untitled

    Abstract: No abstract text available
    Text: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter


    OCR Scan     		PDF BUZ21 O-220 C67078-S1338-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: BSS 129 Infine on technologies SIPMOS Small-Signal Transistor • • • • • • • 240 V 0.15 A ^DSfon 20 O N channel Depletion mode High dynamic resistance Available grouped in VGs th> V DS 1D Type Pin C onfigu ration Marking Tape and Reel Information


    OCR Scan     		PDF Q62702-S015 E6288 Q67000-S116 E6296: 235b05 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5

    s43a

    Abstract: No abstract text available
    Text: SIEMENS 8M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 328020G D-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)


    OCR Scan     		PDF 328020G D-50/-60 32-bit flS35b05 B235bG5 00flS452 fl23Sb0S s43a

    Untitled

    Abstract: No abstract text available
    Text: BUZ 344 I nf ineon technologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^DS to flDS on Package Ordering Code BUZ 344 100 V 50 A 0.035 n TO-218AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-218AA C67078-S3132-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current


    OCR Scan     		PDF SIS0005Â Q67041-S4028 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 8-Bit CMOS Microcontroller SAB-C502 Preliminary • Fully compatible to standard 8051 microcontroller • Versions for 12 / 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing of program and external data memory


    OCR Scan     		PDF SAB-C502 SAB-C502-2R 10-bit 15-bit P-DIP-40 P-LCC-44 0El35tjDS fl23SbOS 00bl314

    amplitude modulator gilbert cell

    Abstract: of fsk modulator using 555 halbleiter schaltungen marking code C3G SMD RF mixer 920 Mhz siemens rs 1007 TRANSISTOR SMD MARKING CODE 702 fsk modulator using 555 MARKING SMD TRANSISTOR DQ siemens VFT
    Text: S IE M E N S ICs for Communications Mixer DC - 2.5GHz and Vector Modulator 0.8 - 1.5GHz PMB 2201 Version 1.2 Preliminary Data Sheet 05.97 • ö235bos o c n ö b iz cm 2 m This Material Copyrighted By Its Respective Manufacturer [ Edition 05.97 Published by Siemens AG,


    OCR Scan     		PDF a235bD5 1429MHz 1453MHz 235LQ5 P-TSSOP-24 S235bD5 amplitude modulator gilbert cell of fsk modulator using 555 halbleiter schaltungen marking code C3G SMD RF mixer 920 Mhz siemens rs 1007 TRANSISTOR SMD MARKING CODE 702 fsk modulator using 555 MARKING SMD TRANSISTOR DQ siemens VFT

    30N03

    Abstract: marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SPB30N03 SPP30N03 SMD transistor 2x sot 23 smd code book B3
    Text: SPP 30N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance ^ D S o n • Avalanche rated Continuous drain current b V 30 0.023 a A 30 • dy/df rated


    OCR Scan     		PDF SPP30N03 P-T0220-3-1 Q67040-S4736-A2 SPB30N03 P-T0263-3-2 Q67040-S4736-A3 VPT05I64 fiS35bG5 D133777 SQT-89 30N03 marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SMD transistor 2x sot 23 smd code book B3

    PSB4400P

    Abstract: PSB4400-P power supply luna siemens power supply luna 2 siemens Q67000-A6074 pj 75 sx 34 ITP0449J ITP04706 P-DIP-18 P-DSO-20
    Text: bSE D • ÖSBSbüS Ü Ü S n 2 7 S3S « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Standard Speech Circuit SSC PSB 4400-P;-T Prelim inary Data Bipolar 1C Features • • • • • • • • • • • • Operation down to a DC line voltage of 1.6 V


    OCR Scan     		PDF GSn27 4400-P PSB4400P PSB4400-P power supply luna siemens power supply luna 2 siemens Q67000-A6074 pj 75 sx 34 ITP0449J ITP04706 P-DIP-18 P-DSO-20