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    B2545 40 Price and Stock

    RAF Electronic Hardware M1940-b-2545-s

    Standoffs & Spacers 4.5mm Rd X 3mm X M2.5 Thd
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    Mouser Electronics M1940-b-2545-s
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    RAF Electronic Hardware M1940-b-2545-al

    Standoffs & Spacers 4.5mm Rd X 3mm X M2.5 Thd
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    RAF Electronic Hardware M1940-b-2545-ss

    Standoffs & Spacers 4.5mm Rd X 3mm X M2.5 Thd
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    RAF Electronic Hardware M1940-b-2545-b

    Standoffs & Spacers 4.5mm Rd X 3mm X M2.5 Thd
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    Mouser Electronics M1940-b-2545-b
    • 1 $2.93
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    • 100 $2.42
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    B2545 40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b2545

    Abstract: 221D AN1040 MBRF2545CT
    Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide


    Original     		PDF MBRF2545CT r14525 MBRF2545CT/D b2545 221D AN1040 MBRF2545CT

    b2545

    Abstract: b2545 40
    Text: MBRB2545CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • Center−Tap Configuration


    Original     		PDF MBRB2545CT O-220 1255C 55C/W b2545 b2545 40

    b2545

    Abstract: MBRF2545CT
    Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRF2545CT AN1040. b2545 MBRF2545CT

    b2545

    Abstract: No abstract text available
    Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		PDF MBRF2545CT AN1040. b2545

    b2545

    Abstract: b2545 transistor manual MBRB2545CT 418B-04 MBRB2545CTT4 418B-03 manual B2545 B2545 M b2545 40
    Text: MBRB2545CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • Center−Tap Configuration


    Original     		PDF MBRB2545CT O-220 MBRB2545CT/D b2545 b2545 transistor manual MBRB2545CT 418B-04 MBRB2545CTT4 418B-03 manual B2545 B2545 M b2545 40

    B2545

    Abstract: 221D-03
    Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRF2545CT MBRF2545CT/D B2545 221D-03

    B2545 AKA

    Abstract: b2545g B2545 b2545g aka B2545G diode mbrf2545ctg
    Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRF2545CT MBRF2545CT/D B2545 AKA b2545g B2545 b2545g aka B2545G diode mbrf2545ctg

    Motorola b2545

    Abstract: b2535 b2535 diode b2545 b2545 MOTOROLA 221A-06 MBR2535CT MBR2545CT
    Text: MOTOROLA Order this document by MBR2535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2535CT MBR2545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:


    Original     		PDF MBR2535CT/D MBR2535CT MBR2545CT MBR2545CT 26otorola, Motorola b2545 b2535 b2535 diode b2545 b2545 MOTOROLA 221A-06 MBR2535CT

    b2545g

    Abstract: B2545G diode b2545g aka B2545 AKA B2545g SCHOTTKY BARRIER RECTIFIER aka
    Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		PDF MBRF2545CT MBRF2545CT/D b2545g B2545G diode b2545g aka B2545 AKA B2545g SCHOTTKY BARRIER RECTIFIER aka

    b2545g

    Abstract: B2545 AKA b2545 b2545G AKA B2545G diode B2545g SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2545CTG b2545 transistor manual MBRF2545CT
    Text: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		PDF MBRF2545CT MBRF2545CT/D b2545g B2545 AKA b2545 b2545G AKA B2545G diode B2545g SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2545CTG b2545 transistor manual MBRF2545CT

    B2545 AKA

    Abstract: b2535 b2545 b2535 diode B2535 AKA b2535 on MBR2545CT MBR2535CT mbr2545 01 04 B2545 AKA
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 r14525 MBR2535CT/D B2545 AKA b2535 b2545 b2535 diode B2535 AKA b2535 on MBR2535CT mbr2545 01 04 B2545 AKA

    b2545g

    Abstract: b2545 aka b2545
    Text: MBRJ2545CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRJ2545CTG MBRJ2545CT/D b2545g b2545 aka b2545

    B2545 AKA

    Abstract: b2545g b2545 b2545 transistor manual b2545G AKA B2545G diode MBRB2545CTT4G MBRB2545CT MBRB2545CTG MBRB2545CTT4
    Text: MBRB2545CT Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features •


    Original     		PDF MBRB2545CT O-220 MBRB2545CT/D B2545 AKA b2545g b2545 b2545 transistor manual b2545G AKA B2545G diode MBRB2545CTT4G MBRB2545CT MBRB2545CTG MBRB2545CTT4

    Motorola b2545

    Abstract: B2545 b2545 MOTOROLA 221D AN1040 MBRF2545CT
    Text: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF2545CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features


    Original     		PDF MBRF2545CT/D MBRF2545CT Motorola b2545 B2545 b2545 MOTOROLA 221D AN1040 MBRF2545CT

    B2535

    Abstract: b2545 b2535 diode
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 r14525 MBR2535CT/D B2535 b2535 diode

    b2545g

    Abstract: B2545 AKA b2545 b2545G AKA B2545G diode MBRB2545CT MBRB2545CTG MBRB2545CTT4 MBRB2545CTT4G B2545g SCHOTTKY BARRIER RECTIFIER aka
    Text: MBRB2545CT Preferred Device SWITCHMODE] Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • • • • • •


    Original     		PDF MBRB2545CT O-220 MBRB2545CT/D b2545g B2545 AKA b2545 b2545G AKA B2545G diode MBRB2545CT MBRB2545CTG MBRB2545CTT4 MBRB2545CTT4G B2545g SCHOTTKY BARRIER RECTIFIER aka

    B2545G

    Abstract: B2545 AKA b2545g aka B2545 B2545 M B2545G diode
    Text: MBRB2545CT Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • • • • • •


    Original     		PDF MBRB2545CT O-220 MBRB2545CT/D B2545G B2545 AKA b2545g aka B2545 B2545 M B2545G diode

    b2545g

    Abstract: B2545G diode b2545 aka B2545 b2545g aka
    Text: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package http://onsemi.com The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal.


    Original     		PDF MBRB2545CTG, SBRB2545CTG MBRB2545CT/D b2545g B2545G diode b2545 aka B2545 b2545g aka

    b2545g

    Abstract: B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry
    Text: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • 


    Original     		PDF MBRB2545CTG, SBRB2545CTG O-220 AEC-Q101 MBRB2545CT/D b2545g B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry

    b2535

    Abstract: b2545 b2535 diode U4T DIODE Motorola b2545 2535c B2545 M BR2545CT
    Text: MOTOROLA Order this document by MBR2535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2535CT MBR2545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:


    OCR Scan     		PDF MBR2535CT/D B2535, B2545 MBR2535CT MBR2545CT MBR2545CT -220A b3b7255 b2535 b2535 diode U4T DIODE Motorola b2545 2535c B2545 M BR2545CT

    b2535

    Abstract: b2545 B2545 M b2535 diode
    Text: MOTOROLA MBR2535CT MBR2545CT SEM ICONDUCTOR TECHNICAL DATA MBR2545CT is a Motorola Preferred Device Sw itchm ode Power R e ctifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:


    OCR Scan     		PDF MBR2535CT MBR2545CT MBR2545CT MBR2535CT, b2535 b2545 B2545 M b2535 diode

    B2545

    Abstract: Motorola b2545
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifiers M B R F2545C T M otorola P referred D evice The SW ITCHM O DE Power Rectifier em ploys the Schottky Barrier principle in a large area m e ta l-to -silico n power diode. S ta te -o f-th e -a rt geom etry features


    OCR Scan     		PDF

    MOTOROLA B2545

    Abstract: b2545 MOTOROLA B2545
    Text: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e ctifier The SW ITCHM O DE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-the-art geometry features


    OCR Scan     		PDF MBRF2545CT/D MOTOROLA B2545 b2545 MOTOROLA B2545

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S chottky Pow er R ectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-sllicon power diode. S tate-of-the-art geometry features


    OCR Scan     		PDF MBRF2545CT/D