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    JRH Electronics D38999-23HB2XD

    D38999/23HB2XD
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    DigiKey D38999-23HB2XD 1
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    TE Connectivity D38999-23HB2XD

    D38999/23HB2XD
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    JRH Electronics D38999-21HB2XD

    D38999/21HB2XD
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    DigiKey D38999-21HB2XD 1
    • 1 $3211.75
    • 10 $1908.818
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    TE Connectivity D38999-21HB2XD

    D38999/21HB2XD
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    TE Connectivity D38999-27HB2XD

    D38999/27HB2XD
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    B2XD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TMS320C54x program to multiply two q15 numbers

    Abstract: spra454 4 bit left shift circuit for dsp iir filter applications 32x16-bit tms320c54x MEMORY MAPPED REGISTERS ST0 ST1 iIR FILTER implementation in TMS320C54x
    Text: Extended Precision IIR Filter Design on the TMS320C54x DSP Application on an Audio Equalizer Literature Number: SPRA454 Texas Instruments Europe June 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their


    Original     		PDF TMS320C54x SPRA454 TMS320C54x program to multiply two q15 numbers spra454 4 bit left shift circuit for dsp iir filter applications 32x16-bit tms320c54x MEMORY MAPPED REGISTERS ST0 ST1 iIR FILTER implementation in TMS320C54x

    kje x6

    Abstract: kje y4 KJE T5 256x16e KJE T3 kje y9 KJE T4 Y1 kje
    Text: IS 42S 16128 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION MAY 1998 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's4M b Synchronous DRAM IS42S16128 is organized as


    OCR Scan     		PDF 400-mil 50-pin IS42S16128 131072-word 16-bit performanS42S16128 DR005-OC IS42S16128 DR005-OC kje x6 kje y4 KJE T5 256x16e KJE T3 kje y9 KJE T4 Y1 kje

    d4564841

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.


    OCR Scan     		PDF 64M-bit uPD4564441 864-bit 54-pin d4564841

    tdq4-M

    Abstract: HP 2231 IS42S16128
    Text: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.


    OCR Scan     		PDF 131072-word 16-bit 50-pin DR005-0A tdq4-M HP 2231 IS42S16128

    Untitled

    Abstract: No abstract text available
    Text: ISSI' IS 4 2 S 1 6 1 2 8 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.


    OCR Scan     		PDF IS42S16128 131072-word 16-bit 16-bit DR005-0A IS42S16128

    Untitled

    Abstract: No abstract text available
    Text: ISSI' IS 4 2 S 1 6 1 2 8 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION DECEMBER 1997 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as


    OCR Scan     		PDF IS42S16128 131072-word 16-bit IS42S16128 005-0B

    Untitled

    Abstract: No abstract text available
    Text: 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer


    OCR Scan     		PDF IS42S16128 131072-word 16-bit 16-bit 1DD4404 DR005-OA IS42S16128 DR005

    Untitled

    Abstract: No abstract text available
    Text: ISSI' IS 4 2 S 1 6 1 2 8 ADVANCE INFORMATION MAY 1998 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as


    OCR Scan     		PDF IS42S16128 131072-word 16-bit PK13197T2

    SMD marking s07

    Abstract: smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191
    Text: SIEM EN S 16 MBit Synchronous DRAM • HYB 39S16400/800/160CT-8/-10 High Performance: /c K M A X ?CK3 -8 -10 Units 125 100 MHz 8 10 ns ! AC3 6 7 ?CK2 10 12 ns ?AC2 6 8 ns ns • Multiple Burst Read with Single Write Operation • Autom atic and Controlled Precharge


    OCR Scan     		PDF 39S16400/800/160CT-8/-10 fl235b05 SMD marking s07 smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191

    A91A

    Abstract: pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jUPD45256441,45256841,45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.


    OCR Scan     		PDF uPD45256441 uPD45256841 uPD45256163 256M-bit 216x4x4, 608x8x4, 304x16x4 54-pin M13394EJ3V0DS00 A91A pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA

    A2XD

    Abstract: Silicon Integrated System IS42S16128 kjg x6 0020665
    Text: ISSI’ IS 4 2 S 1 6 1 2 8 _ 12ÔK Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION DECEMBER 1997 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply


    OCR Scan     		PDF IS42S16128_ 400-mil 50-pin DR005-OB A2XD Silicon Integrated System IS42S16128 kjg x6 0020665