Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers CDBB320-HF Thru. CDBB3100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free DO-214AA SMB Features -Low Profile surface mount applications in order to optimize board space. 0.087 (2.20) 0.075 (1.90)
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CDBB320-HF
CDBB3100-HF
DO-214AA
UL94-V0
QW-JB024
CDBB320-HF
CDBB340-HF
CDBB360-HF
SK310
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers CDBB320-HF Thru. CDBB3100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free DO-214AA SMB Features -Low Profile surface mount applications in order to optimize board space. 0.087 (2.20) 0.075 (1.90)
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CDBB320-HF
CDBB3100-HF
DO-214AA
UL94-V0
QW-JB024
CDBB320-HF
CDBB340-HF
CDBB360-HF
SK310
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marking B32 diode SCHOTTKY
Abstract: B32 diode smd
Text: Low VF Low IR SMD Schottky Barrier Rectifiers CDBB320LR-HF Thru. CDBB3200LR-HF Reverse Voltage: 20 to 200 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free Features DO-214AA SMB -Low Profile surface mount applications in order to optimize board space.
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CDBB320LR-HF
CDBB3200LR-HF
DO-214AA
UL94-V0
QW-JL028
CDBB320LR-HF
CDBB340LR-HF
CDBB360LR-HF
CDBB3100LR-HF
KL310
marking B32 diode SCHOTTKY
B32 diode smd
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b31 smd diode
Abstract: smd diode code b3 QW-JB024 smd diode smb marking code 31 Diode SMB marking code 14 smd Product type marking code 039 schottky diode SMB marking code 120 ON smd diode marking SMB package smd diode B3 JEDEC DO-214AA diode
Text: SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBB320-HF Thru. CDBB3200-HF Reverse Voltage: 20 to 200 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free DO-214AA SMB Features -Low Profile surface mount applications in order to optimize board space.
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CDBB320-HF
CDBB3200-HF
DO-214AA
UL94-V0
DO-214AA
CDBB340-HF
CDBB360-HF
CDBB3100-HF
CDBB3150-HF
b31 smd diode
smd diode code b3
QW-JB024
smd diode smb marking code 31
Diode SMB marking code 14
smd Product type marking code 039
schottky diode SMB marking code 120
ON smd diode marking SMB package
smd diode B3
JEDEC DO-214AA diode
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Untitled
Abstract: No abstract text available
Text: Document Number: 93493 www.vishay.com B-29 Document Number: 93493 www.vishay.com B-30 Document Number: 93493 www.vishay.com B-31 Document Number: 93493 www.vishay.com B-32 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
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08-Mar-07
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B-30
Abstract: B-31
Text: Document Number: 93493 www.vishay.com B-29 Document Number: 93493 www.vishay.com B-30 Document Number: 93493 www.vishay.com B-31 Document Number: 93493 www.vishay.com B-32 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
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12-Mar-07
B-30
B-31
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transponder chip
Abstract: EM4056 EM4056B6CB2RC EM4056B6CI2LC EM4056B6WP11 EM4056B6WW11E marin transponder EM4056B
Text: EM MICROELECTRONIC - MARIN SA EM4056 2KBIT Read/Write with ANTICOLLISION Contactless Identification Device • Description The EM4056 is a CMOS integrated circuit intended for use in contactless Read/Write transponders. The user’s configurable 2 kbits EEPROM memory
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EM4056
EM4056
D/438
transponder chip
EM4056B6CB2RC
EM4056B6CI2LC
EM4056B6WP11
EM4056B6WW11E
marin transponder
EM4056B
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em marin
Abstract: RF pcb antenna 125khz ID 13 transponder EM4056 EM4056B6CB2RC EM4056B6CI2LC EM4056B6WP11 EM4056B6WW11E ta1p marin transponder
Text: EM MICROELECTRONIC - MARIN SA EM4056 2KBIT Read/Write with ANTICOLLISION Contactless Identification Device • Description The EM4056 is a CMOS integrated circuit intended for use in contactless Read/Write transponders. The user’s configurable 2 kbits EEPROM memory
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EM4056
EM4056
em marin
RF pcb antenna 125khz
ID 13 transponder
EM4056B6CB2RC
EM4056B6CI2LC
EM4056B6WP11
EM4056B6WW11E
ta1p
marin transponder
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intel 2102 Static RAM
Abstract: AF000047 50-pin lcd connector pinout sata hot plug CIRCUIT diagram 50-pin ATAPI dimensions hot swap connectors SR2500AL lsi 7622 r1 SR2500 pcie riser
Text: Intel Server Chassis SR2500 Intel® Server System SR2500AL Technical Product Specification Intel order number D31980-004 Revision – 1.00 June 2006 Enterprise Platforms and Services Division - Marketing Revision History Intel® Server System SR2500AL Revision History
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SR2500
SR2500AL
D31980-004
S5000PAL
SR2500
intel 2102 Static RAM
AF000047
50-pin lcd connector pinout
sata hot plug CIRCUIT diagram
50-pin ATAPI dimensions
hot swap connectors
SR2500AL
lsi 7622 r1
pcie riser
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Untitled
Abstract: No abstract text available
Text: XR, HVB, PBA-X-Ray and Power Board High Voltage Rectifiers HVCA Repetitive Peak Reverse Voltage VRRH Peak Reverse Voltage, Test V Volts V (Volts) Number Max. Forward Voltage Drop VF@ IF Avg. Forward Current Max. ' favm 55^ A (Amps) Max. Reverse Current
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OCR Scan
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XRB100
XRB125
19-X-Ray
27Qbfl4b
G0001Ã
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3PBA50
Abstract: XRB125 XRB150 b31 rectifier 3PBA50RC 6PBA25 HVB300 XR10 XRB100 XRB175
Text: XR, HVB, PBA-X-Ray and Power Board High Voltage Rectifiers HVCA Number Repetitive Peak Reverse Voltage VRRM V Vofts Peak Reverse Voltage, Test VTOM V(Voits) ' favm 55“ 0 A (Amps) Max. Forward Voltage Drop VF@ IF V (Volts) Max. Reverse Current ' r @V r r m @ 2 5 ^
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OCR Scan
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XRB100
XRB125
XRB150
XRB175
19-X-Ray
20-High
3PBA50
b31 rectifier
3PBA50RC
6PBA25
HVB300
XR10
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diodes byt
Abstract: 16P-200 16P-400 T0220AB diodes byt 400 byt 400
Text: r z ^ T 7 S G S -T H O M S O N # B Y T 1 6 P - 2 0 0 - > 4 0 0 FAST RECOVERY RECTIFIER DIODES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING Cathode connected to case H ï-N - Ai SUITABLE APPLICATIONS : • The BYT 16 P can be used :
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OCR Scan
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16P-200
T0220AB
BYT16P-
200av)
024If2
012If
7SES237
00b024fl
diodes byt
16P-400
T0220AB
diodes byt 400
byt 400
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scr 606
Abstract: CL - 606 N tys 606 marking 606
Text: / 7 7 SGS-THOMSON TYS 606 SENSITIVE GATE SCR FEATURES • LOW Iqt < 200 nA ■ LOW lH < 6 mA ■ It RMS = 6 A DESCRIPTION The TYS 606 Silicon Controlled Rectifiers are high performance MESA diffused PNPN devices glass passivated sensitive gate technology.
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OCR Scan
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PDF
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712T237
scr 606
CL - 606 N
tys 606
marking 606
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1nu9
Abstract: 1N1199A 1N1200A 1N1201A 1N1202A 1N3670A international rectifier silicon rectifier D0203AA
Text: INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL l&ÊTJ MÖSS4S5 0004^53 55 C R EC TIFIER 04923 D Data Sheet No. PD-2.084 T - o t ~ /7 INTERNATIONAL RECTIFIER I O R A ,nN3 B-7 0 A S E R IE S 1S Amp Medium Power Silicon Rectifier Diodes D escription/Features
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1N1199A,
1N3B-70A
1N1199A
1N3670A
L-S-19500/260
1nu9
1N1200A
1N1201A
1N1202A
international rectifier silicon rectifier
D0203AA
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IOR 5250
Abstract: 1N1183A IN1183 1N212BA IOR 136 1N1183 1N2128A 1N3765 1N11B3 N1190
Text: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 Amp Power Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics ' f îAVi 1N1183 1N3765 1N1183A 35* 35* 40* 1N2128A Units
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1N11B3,
1N3765,
1N11S3A,
1N212BA
1N1183
1N3765
1N1183A
1N2128A
IOR 5250
IN1183
IOR 136
1N11B3
N1190
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150L120A
Abstract: 150LA 45L100 2088a BS3934 cr 29c BS9300 45L15 150K-A 150L80A
Text: 73 DE|4fi5545H 0007350 3 | Data Sheet No. PD-2.088A 73C 07350 4855452 INTERNATIONAL RECTIFIER D T -a /-3-/ in t e r n a t io n a l r e c t if ie r 45L, 15QK-A, 1SOL-A, 150K5 SERIES 1 5 0 Amp Power Silicon Rectifier Diodes Description Major Ratings and Characteristics
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150K-A,
150L-A,
150KS
150K-A/150KS
150L-A/45L
152K-A
V1/2-20
152L-A
3/8-24-UNF-2A
150L120A
150LA
45L100
2088a
BS3934
cr 29c
BS9300
45L15
150K-A
150L80A
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U214
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRFR214/U214 FEATURES D -P A K • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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OCR Scan
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IRFR214/U214
IRFR214
IRFU214
7Tb4142
DDEflti40
G020b41
U214
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rbs 5000
Abstract: rbs 6000 RBS 6000 -ericsson BP107 G-117 G-119 nsm 4000
Text: 7 E TM b 21 OOGbBSb 7 T 5 H P R X R BS8 7000A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 v POWEREX Twr b4E HîClh PO W G i G rill P lttp O S G
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BP107,
/12UV
DUCT10N
G-120
rbs 5000
rbs 6000
RBS 6000 -ericsson
BP107
G-117
G-119
nsm 4000
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ir2110 circuit DIAGRAM
Abstract: No abstract text available
Text: International IQ R Rectifier DataSheelNo-PD-6011E IR 2 1 1 0 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 500 V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V
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IR2110STj
IRFBC20)
IR2110S
IRFBC30>
IRFBC40)
tR2110STj
IRFPE50i
ir2110 circuit DIAGRAM
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Untitled
Abstract: No abstract text available
Text: International IÖR Rectifier Data Sheet No. P D -6.01 1E IR2110 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 500V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V
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PDF
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IR2110
SS45E
00E7SL7
IR2110S
IRFBC20)
IR2110STj
IRFBC40)
IRFBC30)
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1N1199A
Abstract: 1N1200A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A 1N3670A 10-32UMF-2A 1N3670A Series
Text: Data Sheet No. PD-2.084 IN T E R N A T IO N A L R E C T IF I E R 1N 1 1 9 9 A , 1N 3 B 7 a A lion I S E R IE S I E A m p M edium P o w er Silicon R e c t if ie r Diodes Major Ratings and Characteristics @ 50 HZ @ 60 Hj Description/Features • Voltage rati ngs from 50 to 1,000 volts
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1N11S9A,
1N3670A
MIL-S-19500/260
10-32UMF-2A
1N1199A,
1N1199A
1N1200A
1N1202A
1N1203A
1N1204A
1N1205A
1N1206A
10-32UMF-2A
1N3670A Series
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IRFS9530
Abstract: IRFS9531
Text: P-CHANNEL POWER MOSFETS IRFS9530/9531 FEATURES • • • • • • • Lower Rds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
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PDF
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IRFS9530/9531
IRFS9530
-100V
IRFS9531
O-220F
IRFS9530
IRFS9531
GG2R10S
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Untitled
Abstract: No abstract text available
Text: 4 Ö 5 5 4 5 2 D O I S T SE International i“R RectifioI N T E R N A T I O N A L R E C T I F I E R OST I bâE HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Surface Mount IRLR014 Straight Lead (IRLU014) Available in Tape & Reel Logic-Level Gate Drive
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OCR Scan
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PDF
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IRLR014)
IRLU014)
IRLR014
IRLU014
48S5tS2
001S1S7
IRLR014.
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Untitled
Abstract: No abstract text available
Text: fZ T S G S -T H O M S O N K lIO T M O lg l ] M S T T B 2 0 0 6 P(I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 20A V rrm 600V trr (typ) 55ns Vf K. 1.3V (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA
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OCR Scan
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STTB2006P
STTB2006PI
2500Vrms
GG73b3fi
|
