J0350
Abstract: JO3501 FTE801 JO3502 PTE801 J03501
Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SM 00*141% 3 ■NOTb -R 53-O I MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA J03501 J03502 PTE801 The RF Line NPN Silicon UHF Power Transistors . . . designed fo r 24 Volt UHF large-signal applications in industrial and commercial FM
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b3b725M
-R53-OI
FTE801
J03501
J03SQ2
PTE801
JO3501
JO3502
J03502
J0350
J03501
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marking 25b sot23
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4bE D b3b72SM 0Cm 25b no Tb b MOTOROLA •l SEM ICONDUCTOR TECHNICAL DATA The RF Line MMBR5179L Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . d e s ig n e d fo r sm a ll-sig n a l a m p lifica tio n at fre q u e n cie s to 500 M H z. S p e c if
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b3b72SM
MMBR5179L
2N5179
marking 25b sot23
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MTP8N50
Abstract: TMOS Power FET 221A-06 AN569 TO-220-A6
Text: MOTOROLA SC XSTRS/F F tflE D • b3b72SM DDTfl7DH SHT ■ M O T b MOTOROLA ■ SE M IC O N D U C T O R TECHNICAL DATA MTP8N50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silico n Gate Y This T M O S Power FET is designed for high voltage, high speed
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MTP8N50
MTP8N50
TMOS Power FET
221A-06
AN569
TO-220-A6
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AMs03
Abstract: BU1008AF C4815 BU1008ADF p6302 AM503 AN1040 BU100
Text: MOTOROLA SC XSTRS/R F 4bE D b3b72SM QDS37Ô3 2 noTb Order this data sheet by BU1008AF/D MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BU1008AF BU1008ADF Full Pak NPN Silicon Power Transistors Horizontal Deflection . . . specifically designed fo r use in large screen color T V deflection circuits o peratin g at
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BU1008AF/D
O-218
AN1040.
BU1008AF
BU1008ADF
AMs03
BU1008AF
C4815
p6302
AM503
AN1040
BU100
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MJ8502
Abstract: MJ8503 J8503 1N4934 AN-222 MJE200 Avalanche B00 J850
Text: MOTO R O L A SC XSTRS/R 12E 0 § b3b72SM 0004^^7 ^ | F i~ MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 5 .0 A M P E R E NPN SILICON POWER TRANSISTORS SW IT C H M O D E S E R IE S NPN S IL IC O N POW ER T R A N S IS T O R S
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b3b72SM
MJ8502
MJ8503
Time-25Â
J8503
1N4934
AN-222
MJE200
Avalanche B00
J850
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BC817
Abstract: BC818 BC818-16L BC817-16L BC817-25L BC817-40L BC818-25L BC818-40L 25L MARKING
Text: motorola XSTRS/R F sc 1EE D | b3b72SM QGflSaô3 T | M A X I M U M R A T IN G S R ating Colle ctor-E m itte r V oltag e Co llector-B ase V olta g e •t E m itter-Base V olta g e Sym bol BC817 BC818 U n it V cE O 45 25 V VCBO 50 30 V Ve b o 5.0 5.0 V ic 500
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b3b72SM
BC817
BC818
BC817-16L
BC818-16L
BC817-25L
BC818-25L
BC817-40L
BC818-40L
25L MARKING
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but16
Abstract: No abstract text available
Text: MOTOROLA SC ÎXSTRS/R F> 6367254 MOTOROLA SC Tt XSTRS/R DF|b3b72SM 96D F> 80785 □□fl07flS D l~-3 3 -«3e? MOTOROLA BUT16 SEM ICO N D U CTO R TECHNICAL DATA 12 AMPERES SW ITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN SILICON POWER DARLINGTON TRANSISTORS
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b3b72SM
fl07flS
BUT16
but16
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tip 33 c
Abstract: TIP-33 C T1P34 tip33a T1P34C 31a7 p/514 asm 1543 d lf
Text: MOTORCLA SC XSTRS/R F 12E D | b3b72SM 0DÖ552S Q • MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS pup TIP33 TIP33A T1P33B T1P33C T1P34 TIP34A TIP34B T1P34C T-B3-Ì5 r-3 3-OI 1 0 A M PER E C O M P L E M E N T A R Y SILIC O N
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b3b72SM
TIP33
TIP33A
T1P33B
T1P33C
T1P34
TIP34A
TIP34B
T1P34C
tip 33 c
TIP-33 C
T1P34C
31a7
p/514 asm 1543 d lf
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2N706
Abstract: 2N706A J 2N706 2N706AB 2N706B 2N706 JAN 2N2368
Text: MOTOROLA SC XSTRS/R F D | b3b72SM OOflbait. 1 | M A X IM U M R A T IN G S R ating Collector-Em itter V olta g e 2N 706A,B C ollector-E m itter Voltag eO C o llector-Base V olta g e Em itter-Base V olta g e 2N706 2N 706A 2N706B C o llector Current 2N706AB
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2n706a
2n706
2n706b
2n706ab
2N706B
10Vdc
J 2N706
2N706 JAN
2N2368
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2N2894
Abstract: No abstract text available
Text: M O T O R O L A SC X S T R S / R F bflE D • b3b72SM DDTRmM bl2 ■ M A X IM U M R A T IN G S Rating Unit S ym bol V alue Vq eO -1 2 Vdc Collector-Base V oltage v CEO -1 2 Vdc Emitter-Base Voltage C ollector-E m itter Voltage(1) vebo - 4 .0 Vdc C ollector C urrent — C ontinuous
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b3b72SM
2N2894
O-206AA)
-30mAdc,
2N2894
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CL 2181 ic
Abstract: J04045 CL 2181 C14A J101 VK-211 QT4E05
Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SM 00=14201 3 ■MOTb MOTOROLA ■ SEM IC O N D U CTO R TECHNICAL DATA J04045 The RF Line NPN Silicon VHF Power Transistor 45 W — 175 MHz RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for 12.5 Volt wideband, large-signal amplifier applications in
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b3b72SM
J04045
16A-01.
VK-211-07/38
CL 2181 ic
J04045
CL 2181
C14A
J101
VK-211
QT4E05
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MTD3055E
Abstract: dgtn 369A-10 AN569 MTD3055E1 diode zener 3144 voltage
Text: M O T O R O L A SC X S T R S / R F bflE ]> b3b72SM 00^0535 330 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor DPAK for Surface or Insertion Mount
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b3b72S4
MTD3055E
MTD3055E
dgtn
369A-10
AN569
MTD3055E1
diode zener 3144 voltage
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BUZ-10L
Abstract: mtp23n BUZ10L
Text: MOTOROLA SC X STRS/R F 2bE D b3b72SM OGICHDG 1 O rder this d ata sheet by B U Z 10U D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ10L M TP23N 05L Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate These T M O S Power FETs are designed for high speed,
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b3b72SM
BUZ10L
TP23N
BUZ10L
C65M6
BUZ-10L
mtp23n
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2N3422
Abstract: 2N3442 2n4347 2N4327 C0440
Text: MOTOROLA SC XSTRS/R F 1EE D | b3b72SM G0â44b0 MOTOROLA r - 3 3 -/ 3 T | 2N3442 2N4347 SEMICONDUCTOR TECHNICAL DATA 5.0 AND 10 AMPERE POWER TRANSISTORS NPN SILICON HIGH-POWER INDUSTRIAL TRANSISTORS 1 2 0 ,1 4 0 V O L T S 1 0 0 ,1 1 7 W A T T S NPN silicon power transistors designed for applications in
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b3b72SM
2N3442
2N4347
2N4347
2N3442
2N3422
2N4327
C0440
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T2721
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F •4bE D ■ b3b72SM OOReSOT T ■ MOTb / MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete M ilitary Products DM0 lllllll NPN Silicon Small-Signal Transistor . . . designed for general-purpose switching and am plifier applications M M 5682
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b3b72SM
MM5682
MIL-S-19500/xxx
O-205AD
T2721
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kd 116 transistor
Abstract: No abstract text available
Text: M O T O R O L A SC -CXSTRS/R F> it 6367254 MOTOROLA SC XSTRS/R D Ë J b3b72SM 00024^2 96D F 82492 D — - T-^3 -as MHQ6001 MHQ6002 M AXIM UM RATINGS Sym bol V alu e U n it C o lle ctor-E m itte r V o lta g e V C EO 30 Vdc Co lle ctor-B ase V olta g e
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b3b72SM
MHQ6001
MHQ6002
O-116
kd 116 transistor
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motorola 2961
Abstract: 2961 motorola MRF1015MC
Text: 15E 0 I b3b72SM M OTOROLA SC 0007^00 XSTRS/R 1 | F M OTOROLA •I SEM ICONDUCTOR MRF1015MA MRF1015MB MRF1015MC T E C H N IC A L DATA The RF Line 15 W P E A K 9 6 0 -1 2 1 5 M Hz MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS N P N S IL IC O N
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b3b72SM
MRF1015MA
MRF1015MB
MRF1015MC
MRF1015MA,
MRF1015MB,
RF1015M
motorola 2961
2961 motorola
MRF1015MC
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET
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OT-223
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MTM12N10
Abstract: 221A-06 25CC MTP12N10E
Text: MOTOROLA SC XSTRS/R F bflE D • b3b72S4 00TÔ57Û 72b »nOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M TP 12N 10E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silico n Gate •Motorola Preferred Device
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b3b72S4
MTM12N10
MTP12N10E
MTM12N10,
MTM12N10
221A-06
25CC
MTP12N10E
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MRH80NHXV
Abstract: No abstract text available
Text: M O T O R O L A SC X ST RS /R F SbE D • t.3b?SSM O C H O S l ? T ■ T-3>£-1 ( MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA PRELIMINARY DATA DM0 MRH80NHXV, MRH80NHS mini PROCESSED TO MIL-S-19500 RADIATION TOLERANT TRANSISTOR Discrete Military Operation 80 VOLT, 500 MILLIAMPERE BIPOLAR NPN
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MRH80NHXV,
MRH80NHS
MIL-S-19500
O-206AA
10HAdc
MRH80NHXV
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TP10N25
Abstract: No abstract text available
Text: MOTOROLA SC CXSTRS/R F bftE D • b3fc.7ES4 GO' i f l TBl 557 « M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t Tran sistor N-Channel Enhancement M ode Silicon Gate TMOS POWER FET 10 AMPERES RDS on) = 0 « OHM
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21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
TP10N25
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2N4265
Abstract: 2904S
Text: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Unit Collector-Emltter Voltage Characteristic VCEO 15 12 Vdc Collector-Base Voltage v CBO Emitter-Base Voltage 30 v EBO 6.0 Vdc Collector Current — Continuous ic 200 mAdc Total Device Dissipation @ Ta = 25°C
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2N4264
2N4265
2N4265
O-226AA)
010332b
2904S
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221A-06
Abstract: AN569 MTP10N25 TMOS Power FET
Text: M O T O R O L A SC CX S T R S / R F bflE D • b3fc,7ES4 GO'iflTBl 557 « n O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement M ode Silicon Gate TMOS POWER FET 10 AMPERES RDS on) = 0.45 OHM
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b3b72S4
MTP10N25
221A-06
AN569
MTP10N25
TMOS Power FET
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2N10E
Abstract: MTM12N10
Text: MOTOROLA SC XSTRS/R F bfl E J> m b3b72S4 0 0 T ÔS 7 Û 72b » n O T b MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M T P 1 2N 10 E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T h e se T M O S Pow er F ET s are d e sign e d for m ed iu m voltage,
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b3b72S4
O-204AA)
97A-01
97A-03
97A-03
O-204AE)
2N10E
MTM12N10
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