3B2S
Abstract: df3p03
Text: M OTOROLA Order this document by MMDF3P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 100 m ii
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MMDF3P03HD/D
3B2S
df3p03
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Untitled
Abstract: No abstract text available
Text: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,
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b3b72S4
MJ10014
MJ10014
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2C3866AHV
Abstract: chip die npn transistor 2C3866A
Text: b3b72SH O O ^ f e ? 7 4bE I> •H0TbT:3 l*3 3 Î10T0R0LA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 2C3866AHV Chip NPN Silicon High-Frequency Transistor u m Discrete Military Operation . .designed for amplifier and oscillator applications. Suitable for use as output, driver or
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b3b72SH
10T0R0LA
2C3866AHV
71TESTS
chip die npn transistor
2C3866A
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MRF581A
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1,R2 NPN Silicon High-Frequency Transistors D e signed for high current low power amplifiers up to 1.0 GHz. • Low N oise 2.0 d B @ 5 0 0 M H z • Low Intermodulation Distortion
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MRF581
MRF581A
MRF5812,
56-590-65/3B
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