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    LTND

    Abstract: MMT3960 050 B3L
    Text: MOTOROLA SC OIODES/OPTO} .6-36725 S MOTOROLA 34 SC DËT|b3b7Z55 DIODES/OPTO MICRO-T (continued) 3^C fl 0G3Ö53D 38230 M M T3960-N PN 7=3/-/7 RF AND HIGH/SPEED SWITCHING TRANSISTOR • designed for high-speed current-mode logic switching applications. TOP


    OCR Scan     		PDF 636J255 MMT3960-NPN MMT3960 LTND 050 B3L

    MPX7010DP

    Abstract: MPX7010 MPX7010GP max2997
    Text: MOTOROLA Order this document by MPX7010/D SEMICONDUCTOR TECHNICAL DATA M PX7010 M PX7014 SERIES Advance Information 0 to 1.5 PSI, High Zjn, Low Pressure On-Chip TemperatureCompensated and Calibrated, Silicon Pressure Sensors Motorola Preferred Devices 0-1 .5 PSI


    OCR Scan     		PDF MPX7010/D MPX7010 MPX7014 371D-02 2PHX34049S-0 MPX7010DP MPX7010GP max2997

    schottky b37 diode

    Abstract: No abstract text available
    Text: MOTOROLA Order th is docum ent by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF2060CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features


    OCR Scan     		PDF MBRF2060CT/D MBRF2060CT h3b725 schottky b37 diode