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    B40 DIODE Search Results

    B40 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    B40 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5v 10mA reed relay

    Abstract: B40-0002 B40-0003
    Text: B40 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B40 is four independent form A channels in one quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter


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    PDF 40Sec 2000Hz 5v 10mA reed relay B40-0002 B40-0003

    oxygen sensor operational amp

    Abstract: amplifier 5.1 surrounding system circuit diagram Capacitive layout LMC662 equivalent spice model pressure sensor sp 20 Rail to rail operation amplifier in DIP case LMC6492 LMC6492AEM LMC6492AEMX LMC6492AEN
    Text: LMC6492 Dual LMC6494 Quad CMOS Rail-to-Rail Input and Output Operational Amplifier General Description Features Typical unless otherwise noted The LMC6492 LMC6494 amplifiers were specifically developed for single supply applications that operate from b40 C


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    PDF LMC6492 LMC6494 LMC649onductor 20-3A oxygen sensor operational amp amplifier 5.1 surrounding system circuit diagram Capacitive layout LMC662 equivalent spice model pressure sensor sp 20 Rail to rail operation amplifier in DIP case LMC6492AEM LMC6492AEMX LMC6492AEN

    B250 Bridge Rectifiers

    Abstract: transistor C1000 b40 bridge "Bridge Rectifiers" b380 b40 bridge rectifier BRIDGE B380 C1000 B250C1000 B380C1000 B250 bridge diode
    Text: B40-B380/C1000 SILICON BRIDGE RECTIFIERS WOB PRV : 100 - 900 Volts Io : 1.0 Amperes 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop


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    PDF B40-B380/C1000 UL94V-O MIL-STD-202, 50mVp-p B250 Bridge Rectifiers transistor C1000 b40 bridge "Bridge Rectifiers" b380 b40 bridge rectifier BRIDGE B380 C1000 B250C1000 B380C1000 B250 bridge diode

    power supplies

    Abstract: diode 4007 smd diode P6KE diode SMD package P6KEC EM513 DIODE BY255 S5 DIODE smd schottky diode s3 b40 zener diode P6KE SMD UF4004 SMD
    Text: Diotec Products for Power Supplies Typical Applications: AC/DC-, DC/DC-Converters, Battery Chargers, Off-Line PS Line Protection Î TVS-Diodes Input Rectification Î Bridge Rectifiers, Standard-/Fast Rectifiers Voltage Regulation Î Zener Diodes Boost-Diode for PFC


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    PDF 1N4001. 1N5391. 1N5400K. 1N5400. BY251. BY550-. P1000. P1200. SB120. SB220. power supplies diode 4007 smd diode P6KE diode SMD package P6KEC EM513 DIODE BY255 S5 DIODE smd schottky diode s3 b40 zener diode P6KE SMD UF4004 SMD

    Untitled

    Abstract: No abstract text available
    Text: 301U R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range • High voltage rating up to 2500 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version


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    PDF DO-205AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MSS30

    Abstract: b20 diode MSS-30 248-H30 442-E4
    Text: MSS30,000 Series Low Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum


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    PDF MSS30 MIL-PRF-19500 MIL-PRF-38534 b20 diode MSS-30 248-H30 442-E4

    448-e45

    Abstract: 048-P86 448-H40 MSS50 B10B mss50 aeroflex 244-B20 018pF
    Text: MSS50,000 Series High Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum


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    PDF MSS50 MIL-PRF-19500 MIL-PRF-38534 448-e45 048-P86 448-H40 B10B mss50 aeroflex 244-B20 018pF

    1N4001-7

    Abstract: snubber FOR 3PHASE BRIDGE RECTIFIER b40 bridge rectifier diode 1n4007 melf smd UF4003 SMD 5V power supply using bridge rectifier bridge rectifier using the diode 1N4007 smd diode sk14 diotec smd schottky diode s3
    Text: Home Appliances and Metering Application Note Home Appliances and Metering More and more home appliances are now using electronics to make them more efficient and to give them extra control features. In the past, these features would be limited to timers or simple


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    PDF EN61000-4-x BZW04, BZW06, TGL41, 1N4001-7 snubber FOR 3PHASE BRIDGE RECTIFIER b40 bridge rectifier diode 1n4007 melf smd UF4003 SMD 5V power supply using bridge rectifier bridge rectifier using the diode 1N4007 smd diode sk14 diotec smd schottky diode s3

    C1995

    Abstract: CGS74CT2524 M08A
    Text: CGS74CT2524 1 to 4 Minimum Skew 300 ps Clock Driver General Description Features These minimum skew clock drivers are designed for Clock Generation and Support (CGS) applications operating at high frequencies This device guarantees minimum output skew across the outputs of a given device


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    PDF CGS74CT2524 CGS74CT2524 C1995 M08A

    64 CERAMIC LEADLESS CHIP CARRIER LCC

    Abstract: F-115 54ABT374J 74ABT374 74ABT374CPC 74ABT374CSC 74ABT374CSJ M20D N20B ABT374
    Text: 54ABT 74ABT374 Octal D-Type Flip-Flop with TRI-STATE Outputs Y General Description Y The ’ABT374 is an octal D-type flip-flop featuring separate D-type inputs for each flip-flop and TRI-STATE outputs for bus-oriented applications A buffered Clock CP and Output


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    PDF 54ABT 74ABT374 ABT374 64 CERAMIC LEADLESS CHIP CARRIER LCC F-115 54ABT374J 74ABT374 74ABT374CPC 74ABT374CSC 74ABT374CSJ M20D N20B

    1156

    Abstract: G0-3-80 74HC 74VHC574 74VHC574M 74VHC574SJ 74VHCT574 74VHCT574M 74VHCT574SJ HCT574
    Text: 74VHC574  74VHCT574 Octal D-Type Flip-Flop with TRI-STATE Outputs General Description Features The VHC574 VHCT574 is an advanced high speed CMOS octal flip-flop with TRI-STATE output fabricated with silicon gate CMOS technology It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation This 8-bit D-type


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    PDF 74VHC574 74VHCT574 VHC574 VHCT574 1156 G0-3-80 74HC 74VHC574 74VHC574M 74VHC574SJ 74VHCT574 74VHCT574M 74VHCT574SJ HCT574

    115.023

    Abstract: ABT541 74ABT2541 74ABT2541CMSA 74ABT2541CMTC 74ABT2541CSC 74ABT2541CSJ M20D MSA20 ABT2541
    Text: 74ABT2541 Octal Buffer Line Driver with 25X Series Resistors in the Outputs Y General Description The ’ABT2541 is an octal buffer and line driver designed to drive the capacitive inputs of MOS memory drivers address drivers clock drivers and bus-oriented transmitters receivers Functionally identical to the ’ABT541


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    PDF 74ABT2541 ABT2541 ABT541 115.023 ABT541 74ABT2541 74ABT2541CMSA 74ABT2541CMTC 74ABT2541CSC 74ABT2541CSJ M20D MSA20

    64 CERAMIC LEADLESS CHIP CARRIER LCC

    Abstract: 54ABT373J 74ABT373 74ABT373CPC 74ABT373CSC 74ABT373CSJ ABT373 M20D N20B
    Text: 54ABT 74ABT373 Octal Transparent Latch with TRI-STATE Outputs Y General Description Y The ’ABT373 consists of eight latches with TRI-STATE outputs for bus organized system applications The flip-flops appear transparent to the data when Latch Enable LE is


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    PDF 54ABT 74ABT373 ABT373 64 CERAMIC LEADLESS CHIP CARRIER LCC 54ABT373J 74ABT373 74ABT373CPC 74ABT373CSC 74ABT373CSJ M20D N20B

    B40C800DM

    Abstract: B125 B380C800DM JESD22-B102D J-STD-002B B80 diode B80C800DM
    Text: B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL Recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder Dip 260 °C, 40 seconds ~ • Component in accordance to RoHS 2002/95/EC


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    PDF B40C800DM B380C800DM E54214 2002/95/EC 2002/96/EC 08-Apr-05 B125 B380C800DM JESD22-B102D J-STD-002B B80 diode B80C800DM

    Untitled

    Abstract: No abstract text available
    Text: B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder dip 260 °C, 40 s ~ ~ • Component in accordance to RoHS 2002/95/EC


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    PDF B40C800DM B380C800DM E54214 2002/95/EC 2002/96/EC 08-Apr-05

    B80 diode

    Abstract: No abstract text available
    Text: B40C800G thru B380C800G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA


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    PDF B40C800G B380C800G 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 08-Apr-05 B80 diode

    Untitled

    Abstract: No abstract text available
    Text: B40C1500G thru B380C1500G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA


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    PDF B40C1500G B380C1500G 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 08-Apr-05

    B125

    Abstract: B380 B380C800G B40C800G JESD22-B102 J-STD-002 B125 bridge diode b40 diode B40 bridge diode
    Text: B40C800G thru B380C800G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA


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    PDF B40C800G B380C800G 2002/95/EC 2002/96/EC 18-Jul-08 B125 B380 B380C800G JESD22-B102 J-STD-002 B125 bridge diode b40 diode B40 bridge diode

    54ACQ

    Abstract: 74LVQ373 74LVQ373QSC 74LVQ373QSCX 74LVQ373SC 74LVQ373SCX 74LVQ373SJ 74LVQ373SJX LVQ373
    Text: 74LVQ373 Low Voltage Octal Transparent Latch with TRI-STATE Outputs General Description Features The LVQ373 consists of eight latches with TRI-STATE outputs for bus organized system applications The latches appear transparent to the data when Latch Enable LE is


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    PDF 74LVQ373 LVQ373 54ACQ 74LVQ373 74LVQ373QSC 74LVQ373QSCX 74LVQ373SC 74LVQ373SCX 74LVQ373SJ 74LVQ373SJX

    RKBU4B

    Abstract: B 80 C3700 - 2200 bridge B250 C5000 KBU diode bridge KPBC10 gp20 diode B80 smd diode DD0333S kbu8k 304 GENERAL INSTRUMENT b80
    Text: GENL INSTR/ POWER 25E D • 36=10137 DD0333S 7 ■ SINGLE PHASE BRIDGE RECTIFIERS continued PGK T Y P E 4.0 3.0 IM A ) 5.0 BC KB PC1 6.0 KBU KB PC6 f VRRM (volts) 50 K B P C 10 0 5 B40 C 3 700 /2200 K B L0 0 5 ff KBU4A RKBU4A B40 C 5000/3300 KBU6A# KB PC6005


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    PDF DD0333S PC6005 RKBPC600 C5000/3300 RKBPC601 C3700 C5000/330Q RKBPC602 RKBPC604 RKBU4B B 80 C3700 - 2200 bridge B250 C5000 KBU diode bridge KPBC10 gp20 diode B80 smd diode kbu8k 304 GENERAL INSTRUMENT b80

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP5NB40 STP5NB40FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP5N B40 STP5N B40FP . . . . . V dss R dS(oii ) Id 400 V 400 V < 1 .8 Q. < 1 .8 Q. 4 .7 A 3.1 A TYP IC A L Ros(on) = 1.47


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    PDF STP5NB40 STP5NB40FP B40FP STP5NB40/FP O-22QFP

    TP11N

    Abstract: T0220F
    Text: STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48Q - 10.7A - T0-220/T0-220FP PowerMESH MOSFET TYPE V dss RDS on Id STP11 N B40 S TP11N B40FP 400 V 400 V < 0 .5 5 Q < 0 .5 5 Q 1 0 .7 A 6.0 A . TYPICAL RDS(on) = 0.48 Q EXTREMELY HIGH dV/dt CAPABILITY . 100% AVALANCHE TESTED


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    PDF STP11NB40 STP11NB40FP T0-220/T0-220FP STP11 TP11N B40FP T0220F

    RB031B-40

    Abstract: RB031 rb031b
    Text: £ -f K/Diodes RB031B-40 RB031 B-40 y ' J = i> x t f $ y a v h+ t K Silicon Epitaxial Schottky Barrier Diodes • Îtê • W fé ^ Ü B I/D im e n s io n s Unit : mm & & (C P D -F 5 )0 1) 2) -So 3) ( v F)c • Features 1) Surface mounte type (CPD-F5). o


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    PDF RB031B-40 RB031 RB031B-40 rb031b

    S0068

    Abstract: BA423A
    Text: Philips Semiconductors Product specification AM band-switching diode BA423A FEATURES DESCRIPTION • Continuous reverse voltage: max. 20 V Planar band-switching diode in a hermetically sealed glass SOD68 DO-34 package. • Continuous forward current: max. 50 mA


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    PDF BA423A S0068 BA423A