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    B41 MARKING Search Results

    B41 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    B41 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b40 550

    Abstract: No abstract text available
    Text: 301U R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range RoHS • High voltage rating up to 2500 V COMPLIANT • High surge current capabilities • Stud cathode and stud anode version • High resistance to acceleration


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    PDF DO-205AB 11-Mar-11 b40 550

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    Abstract: No abstract text available
    Text: 301U R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range • High voltage rating up to 2500 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version


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    PDF DO-205AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    b40 550

    Abstract: N301U b40 5000 R305UR
    Text: 301U R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range RoHS • High voltage rating up to 2500 V COMPLIANT • High surge current capabilities • Stud cathode and stud anode version • High resistance to acceleration


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    PDF DO-205AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 b40 550 N301U b40 5000 R305UR

    b40 550

    Abstract: No abstract text available
    Text: 301U R Series Vishay Semiconductors Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range RoHS • High voltage rating up to 2500 V COMPLIANT • High surge current capabilities • Stud cathode and stud anode version • High resistance to acceleration


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    PDF DO-205AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 b40 550

    b41 Marking

    Abstract: 250V T85 16 6 5E4 T85 "Rocker Switches" 1E4 T85 1e4 Switch on/off switch T85 5e4 Switch UL94V-2 250V T85 16 4 1E4
    Text: New ! RH SERIES SNAP-IN ROCKER SWITCHES B ● Cost effective illuminated or non-illuminated models. ● Single pole maintained action models. ● Actuator and case color selections. ● Standard actuator marking options. SPECIFICATIONS Contact ratings: 16A 125VAC 1/4 HP UL/CSA . 16A 250VAC 1/4 HP (UL/CSA).


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    PDF 125VAC 250VAC 250VAC 250VAC: RH130C6GLBR B38-B53 b41 Marking 250V T85 16 6 5E4 T85 "Rocker Switches" 1E4 T85 1e4 Switch on/off switch T85 5e4 Switch UL94V-2 250V T85 16 4 1E4

    Untitled

    Abstract: No abstract text available
    Text: VS-301U R , VS-303U(R), VS-305U(R), VS-307U(R), VS-309U(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range • High voltage rating up to 2500 V • High surge current capabilities • Stud cathode and stud anode version


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    PDF VS-301U VS-303U VS-305U VS-307U VS-309U DO-205AB 2002/95/EC. 2002/95/EC 2011/65/EU.

    panduit

    Abstract: No abstract text available
    Text: Terminals PANDUIT Termination Solutions Success Depends on the Crimp. A proper crimp is the key element of an overall wire termination assembly that unfortunately is all too often overlooked. Proper terminal selection, application and crimping are critical factors to


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    PDF SA-ELCB03 SA-NCCB34 panduit

    Untitled

    Abstract: No abstract text available
    Text: VS-301U R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range • High voltage rating up to 2500 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version


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    PDF VS-301U DO-205AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: NZ5638 NZ5638 Preliminary Data Sheet Multiband Power Amplifier Module TD-LTE Band 7, 38, 40 & 41 Preliminary Data Sheet Description Features The NZ5638 is a 16-pin power amplifier module developed for LTE applications. With advanced InGaP HBT technology, the module supports multi-band 2300-2690MHz for


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    PDF NZ5638 NZ5638 16-pin 2300-2690MHz 2300-2400MHz) 2500-2570MHz) 2570-2620MHz) 2496MHz-2690MHz)

    Standard 10K 103 Trimmer Potentiometer

    Abstract: b41 Marking
    Text: T53 Vishay Sfernice 5 mm Through Hole Trimmer Single-Turn Cermet FEATURES • Fully sealed • 0.25 W at 70 °C • Wide ohmic range 10 Ω to 1 MΩ • Low contact resistance variation (2 % or 3 Ω) • Small size for optimum packaging density • Suitable for both manual or automatic operation


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    PDF TS53Y 2002/95/EC 18-Jul-08 Standard 10K 103 Trimmer Potentiometer b41 Marking

    Device marking code B12 B13 B14 B15 B16

    Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
    Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


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    PDF 128Mb 144Mb HS032N02E HS032N02D HS032N02C HS032N02B HS032E02E HS032E02D HS032E02C HS032E02B Device marking code B12 B13 B14 B15 B16 MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B

    700-PK400A1

    Abstract: 700-PK400-A1 199-FSMA11 NEMA P600 199-FSMA10 4 pole relay
    Text: Bulletin 700 Control Relays Type P, PK, and PH Bulletin 700 S S S S Cat. No. 700-P400A1 Cat. No. 700DC-P200 S Cat. No. 700-PK400A1 Cat. No. 700-PH200 S Direct Drive Convertible Contact Cartridge Relays Type P, PK, and PH 600V Maximum AC/DC Overlapping Contact


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    PDF 700-P400A1 700DC-P200 700-PK400A1 700-PH200 700-CP1 700-CPM 700-CPH 700-CPR 700-PS, 700-N31 700-PK400A1 700-PK400-A1 199-FSMA11 NEMA P600 199-FSMA10 4 pole relay

    Untitled

    Abstract: No abstract text available
    Text: T53 Vishay Sfernice 5 mm Through Hole Trimmer Single-Turn Cermet FEATURES • Fully sealed • 0.25 W at 70 °C • Wide ohmic range 10 Ω to 1 MΩ • Low contact resistance variation (2 % or 3 Ω) • Small size for optimum packaging density • Suitable for both manual or automatic operation


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    PDF TS53Y 2002/95/EC 11-Mar-11

    marking code B49

    Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
    Text: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


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    PDF 256MB 288Mb HS256N08E HS256N08D HS256N08C HS256N08B HS256E08E HS256E08D HS256E08C marking code B49 MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking

    Untitled

    Abstract: No abstract text available
    Text: T53 www.vishay.com Vishay Sfernice 5 mm Through Hole Trimmer Single-Turn Cermet FEATURES • Fully sealed • 0.25 W at 70 °C • Wide ohmic range 10  to 1 M • Low contact resistance variation (2 % or 3  • Small size for optimum packaging density


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    PDF TS53Y 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    B0250

    Abstract: SMD code V12 b41 Marking
    Text: T53 Vishay Sfernice 5 mm Through Hole Trimmer Single-Turn Cermet FEATURES • Fully sealed • 0.25 W at 70 °C • Wide ohmic range 10 Ω to 1 MΩ • Low contact resistance variation (2 % or 3 Ω) • Small size for optimum packaging density • Suitable for both manual or automatic operation


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    PDF TS53Y 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 B0250 SMD code V12 b41 Marking

    OPA343

    Abstract: No abstract text available
    Text: OPA 2341 OPA341 OPA2341 OPA 341 SBOS202A – AUGUST 2001 SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIER WITH SHUTDOWN microAmplifier Series FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● RAIL-TO-RAIL INPUT AND OUTPUT SWING MicroSIZE PACKAGES


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    PDF OPA341 OPA2341 SBOS202A OPA343

    470 D 10

    Abstract: B41857 B41857A3107M00 B41857A3227M00 B43857 B41857A5107
    Text: Single-Ended Capacitors B41857 High Reliability – 105 °C B43857 B41857, B43857 Long-life grade capacitors Applications • High reliability equipment in industrial and automotive electronics Features ■ High reliability and long useful life ■ High ripple current capability


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    PDF B41857 B43857 B41857, KAL0707-F 470 D 10 B41857 B41857A3107M00 B41857A3227M00 B43857 B41857A5107

    B83 004

    Abstract: marking a86 b72 voltage regulator
    Text: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.


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    PDF MN18R162 MP18R162 288Mbit 144MB 16Mx18) 288Mb 16K/32ms B83 004 marking a86 b72 voltage regulator

    MARKING W2 SOT23 TRANSISTOR

    Abstract: SAMSUNG SEMICONDUCTOR
    Text: SAMSUNG S EM ICONDUCTOR INC_14 E 0 J _ 7 Ü b41 MMBC1622D8 0007245 T I. NPN EPITAXIAL SILICON TRANSISTOR T -A ^ -lS AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cotlector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    PDF MMBC1622D8 OT-23 MMBC1622D6 100mA, MARKING W2 SOT23 TRANSISTOR SAMSUNG SEMICONDUCTOR

    Untitled

    Abstract: No abstract text available
    Text: r i 7 SGS-THOMSON ^7# e U STO «! S O A 56 SMALL SIGNAL PNP TRANSISTOR Type Marking SOA56 2GT . SILICON EPITAXIAL PLAN AR PN P T R A N S IS T O R S • MINIATURE P LA ST IC P A C K A G E FO R APPLICATION IN S U R F A C E MOUNTING CIR C U IT S . MEDIUM C U R R E N T A F AMPLIFICATION


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    PDF SOA56 OT-23 OT-23

    BFR92

    Abstract: BFR92A P1 BFR92A b41 Marking BFR92A Transistor BFR92 transistor
    Text: / = T SGS-THOMSON ^ 7 # MOrami@ra M©t BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR Type Marking BFR92 P1 BFR92A P2 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GOLD METALLIZED TRANSISTOR FOR


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    PDF BFR92 BFR92A BFR92A OT-23 SC06960 BFR92/BFR92A OT-23 BFR92A P1 b41 Marking BFR92A Transistor BFR92 transistor

    b41 Marking

    Abstract: 210117 MARK dl B43 marking marking B44 2B421 DL050
    Text: MARK PI N 1 AREA' PRDDUCT MARKI NG TOP VIEW e INDICATOR BOTTOM VIEW COMMON DIMENSIONS VARIABLE DIMENSIONS A 0,62+0,05-0,08 PKG, CODE Al 0,29±0,02 B4-1 1,00+0,05 1,00+0,05 NONE A2 0,33 REF, B4-2 1,05±0,05 1,05±0,05 NONE b 00,35+0,03 B4-3 1,10+0,05 1,10+0,05


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    PDF

    Dale Electronics

    Abstract: dale FP CMF FP
    Text: MODELS C M F-55-39/-60-64, FP55/60 M etal Film R esistors XÜKÖ C o m e , Special Purpose, Fusible, Flameproof FEATURES • Special filming and coating processes • Fusible - Circuit protection in case of other component failure • Flameproof - Meets EIA RS-325, will not flame


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    PDF F-55-39/-60-64, FP55/60 RS-325, CMF-55-39 CMF-60-64 100PPM/ C55-39 C60-64) Dale Electronics dale FP CMF FP