2SK786

Abstract: fsjc EER 35 kd
Contextual Info: E m C ELECTRONICS T| b42752S INC ÜDiflT34 98D 18934 D T - 3 9 -1 3 =J . P R E LIM IN A R Y S P E C IF IC A T IO N F A S T S W IT C H IN G N -Ç H A N N EL S IL IC O N PO W ER Absolute Maximum Rat¡ngs Ta=25*C 800V VOSS Drain to Source Voltage ± 2j V vcss

Contextual Info: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N

nec A2C

Abstract: A50A CERAMIC FLATPACK 20pin
Contextual Info: N E C ELECTRONICS I NC L.1E D • b42752S G03S3E4 77S B N E C E P P B 10480 L U IjV * NEC Electronics Inc. 16,384 X 1-Bit 10K ECL RAM T - Description Pin Configurations The ¿/PB10480 is a very high-speed 10K interface ECL RAM organized as 16,384 words by 1 bit and designed

UPD23C512

Contextual Info: N E C ELECTRONICS INC Tfl De J b42752S OaiSVbD S | SEC NEC Electronics Inc. ADVANCE PRODUCT INFORMATION Decem ber 1986 uPD 23C 512E 65,536 X 8-Bit Mask-Programmable CMOS ROM Data Sheet Th e information contained in this document is being issued in advance of the production cycle lor the device. The

Optical repeaters

Contextual Info: F e C ELECTRONICS INC ST B • b42752S DGDSSIE h ■ NECE~ ~ ~ V T-41-07~ NEC K Fiber Optic Devices OD-8303- D LD Module OD-8303 is designed to couple LD Laser Diode output light to optical fiber through connector. PIN photodiode is installed in OD-8303 for APC (Automatic Power Control) and moni­

Contextual Info: N E C ELECT RO NI C S INC 7 5 D e J b42752S 0000713 Ì D ¿¿PC1658A 1658C SILICON M O N O L IT H IC BIPOLAR INTEGRATED C IR C U IT LOW NOISE W ID E -B A N D AMPLIFIER A b s o lu te M a x im u m R atings UPC1658A UPC1658C 12 12 V 40 40 mA 750 600 mW Vcc XQ3

Contextual Info: N E C ELECTRONICS INC 30E D • b42752S 0ü2Tb25 7 ■ T-'*f/-£‘3 PHO TO D IO D E PH314 S IL IC O N E P IT A X IA L P L A N A R P IN PH O T O D IO D E D E T E C T O R for D A D , V D P A C K A G E D IM E N S IO N S Unit : mm t 97 0 8 ± 0 .2 - 1.8 ± 0.2

PH302B

Abstract: rtk 32 B427 pcb diagram ethanol
Contextual Info: N E C ELECTRONICS INC 3QE D • b42752S ODSTbGB ñ ■ T - ty - S 3 / 1 PHOTO DIODE /_ PH 302B P L A S T IC M O LD E D P IN PHOTO D IO D E D E S C R IP T IO N P A C K A G E D IM E N S IO N S Unit: mm P H 30 2B is a photo diode with P IN structure. It has a wide

dbx vca

Abstract: pc1252 1252H PC1253HA2 PC1252H HPC1253HA2 DBX application note JPC1252HA2 upc1253ha2 UPC1253
Contextual Info: M E C 64 2 7 5 2 5 N E C ELECTRONICS ELECTRONICS INC OSE D | b42752S GGEEfllE 4 05E 22812 INC BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PCI253H A2 ' T-7Ÿ-0S-0/ ' RM S LEVEL SENSOR FOR dbx NOISE REDUCTION SYSTEM DESCRIPTION The fiPC1253HA2 is dbx noise reduction system RMS Root Mean Square level sensor, used in tape deck and other audio

PC2500AH

Abstract: PC2500 12-pin stereo amplifier GD4C5423 22NEC UPC2500A
Contextual Info: PRELIMINARY DATA SHEET b42752S DOHTMES 340 • NECE BIPOLAR ANALOG INTEGRATED CIRCUIT ELECTRON DEVICE M PC2500A 45 W AF POWER AMPLIFIER DESCRIPTION The ;iPC2500A is an audio power amplifier in a 12-lead single in-line package, specifically designed for car stereo appli­

mpc1252h2

Abstract: dbx vca PC1253h2 DBX application note dbx noise reduction marking WV1 UPC1253H2 VC200 82M SENSOR
Contextual Info: N E C E L E C T R 0 NIC S I N ClE DE j b42752S OOOflblS T | ~ J £ j- ô i „ ft" BIPOLAR ANALO G INTEGRATED C IR C U IT fJ- PC1253H2 RMS LEVEL SEN SO R FOR dbx NOISE REDU CTIO N SYSTEM DESCRIPTION PACKAGE DIMENSIONS in m illim e te rs inches The ¿/PC1253H2 is dbx noise reduction system RMS

Contextual Info: N E C ELECTRONICS INC b?E » • b42752S 0030^4=1 202 * N E C E JUPD46258L 32,768 X 8-Bit Static BiCMOS RAM NEC N E C Electronics Inc. Preliminary November 1993 Description Pin Configuration The /JPD46258L is a 32,768-word by 8-bit static RAM

c034

Abstract: C045 GA08 ga01
Contextual Info: N E C ELECTRONICS I NC 7S Ï Ë | b42752S % DODflni S |~" T - 4 2 - 11-Ï3 //P B 6 3 0 0 1 0 K H S ER IES B IPO LA R ECL GATE A R R A YS 1 N E C Electronics Inc. ( • December 1984 Description //PB6311 Specifications The //PB6300 (10KH) series consists of three ultrahigh-speed ECL gate arrays, compatible with an

Contextual Info: b42752S QOSOOn ‘ìOS H N E C E " * “mm : ’> P A T^ A-TT»- -rr S 'y^ H~E E•*'-T BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C I 8 9 1 A M ATRIX SURROUND-SOUIMD PROCESSOR The fiPC1891 A is a specific 1C to reproduce surround-sound by using a signal matrix.

Contextual Info: 'NEC ELECTRONICS INC a / ° 7 30E D • b42752S 002^577 Q ■ PHOTO T R A N S IS T O R PH101 NPN EPIT A X IA L DARLINGTON P H O T O T R A N SIST O R PHOTO DETECTOR D ESC R IPT IO N The PH101 is a miniature NPN sillicon phototransistor hawing exceptionally stable characteristics and high illuminance sensiti­

JJPB10476LL

Abstract: 6BH6 GD35323 FM-8862A 83FM-8861A
Contextual Info: E C ELECTRONICS INC blE SEC NEC Electronics Inc. J> m b42752S DD3S31b bTT H N E C E JL/PB10476LL 1024 X 4-Bit 10K ECL Synchronous RAM 7"^ V 4 - .2J - oÿ Preliminary Information Description Pin Configuration The/iPB10476LL is a very-high-speed 10K interface ECL

3ALF

Contextual Info: N E C ELECTRONICS INC b42752S Ü03Ô17Q Sb5 « N E C E bEE » PRELIMINARY - UNDER DEVELOPMENT VISIBLE LASER DIODE NEC NDL3310 ELECTRON DEVICE N D L 3 3 1 0 650nm VLD UNDER MAIN DEVELOPMENT Higher visibility than 67Onm LD FEATURES: RECOMMENDED OPTICAL OUTPUT POKES 3aM

U20100

Abstract: ICE300N
Contextual Info: b42752S □D4T3ÜG ATT « N E C E PRELIMINARY PRODUCT INFORMATION NEC ELECTRON DEVICE BIPOLAR ANALOG INTEGRATED CIRCUIT / ¿ P C I 852 1 CHIP LSI W I T H IZC BUS F O R P R O C E S S I N G U.S.TV MULTIPLEX AUDIO SIGNAL THe /¿PC1852 is an IC for processing U.S.TV nultiplex audio signal. In this IC, all the functions

83GL-9659B

Contextual Info: N E C b?E D ELECTRONICS INC b42752S 0036^57 381 H N E C E JUPD46259 32,768 x 9-Bit Static BiCMOS RAM NEC NEC Electronics Inc. Preliminary Information November 1993 Description Pin Configuration The JUPD46259 is a 32,768-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its

thermistor 054

Contextual Info: N EC b2E T> • ELECTRONI CS INC b42752S DQ3fiG5b EDM H N E C E DATA SHEET N EC LASER DIODE MODULE NDL5853P, NDL5853PA ELECTRON DEVICE 1 550 nm O PTICAL FIBER COMMUNICATIONS InGaAsP PH A SE-SH IFTED DFB-DC-PBH LA SER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTIO N

gg2h

Abstract: UPD8080AF
Contextual Info: NEC N E C ELECTRONICS INC 30E □ • b42752S DOSbSVb S ■ yuPD70108 V 2 0 8 /1 6 - B it Microprocessor: High-Perform ance, CMOS NEC Electronics Inc. T " * + * i— n - 6 ? ' i Description The/«PD70108 (V20 ) is a CMOS 16-bit microprocessor with internal 16-bit architecture and an 8-bit external

d78310

Abstract: PPD78312 PD78310 pd78312 NEC FIP rpoj 600V igbt dc to dc buck converter 7ROM D78312 NEC LF 312
Contextual Info: N E C ELECTRONICS INC Tñ 6427525 N E C SEC NEC Electronics Inc. D É b42752S 0Ql34b2 5 | ELECTRONICS INC _"T> 98D 13462 //P D 78310/312 8-B IT , SINGLE-CHIP CMOS MICROCOMPUTERS, REAL-TIM E CONTROL ORIENTED _T - W - Z I - O * Description

sccf

Contextual Info: N E C ELECTRONICS INC Tfl D E | b42752S DO lì 111 3 | T '*/3'XS PRELIMINARY SPECIFICATION M O S FI E L D E F F E C T T R A N S I S T O R ELECTRON DEV1CS u V A •• •; 'F A S T S W I T C H I N G : N - C H A N N E L . S I L I C O N P O W E R . M O S Features

NDL2208

Abstract: RL-50 A850 A850 10 fiber optical photo detector
Contextual Info: N E C ELECTRONICS INC b2E D •! b42752S 0037^52 172 MNECE DATA SH E E T IMEC PHOTO DIODE N D L 2208 ELECTRON DEVICE O P T IC A L FIB ER C O M M U N ICA TIO N S IL IC O N PIN PHOTO D IO DE D E S C R IP T IO N N D L 2 2 0 8 is a P IN p hotod iode detectors w ith excellent quantum efficiency, sw itching speed, and spectral range. This photo­