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    B50 DIODE Search Results

    B50 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    B50 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    b50 diode

    Abstract: DIODE B50
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES HL-PT-1608H181W-B50-04 WHITE Features •1.6mmX0.8mm SMT LED, 0.4mm THICKNESS. Description •LOW POWER CONSUMPTION. The White source color devices are made with DH InGaN


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    HL-PT-1608H181W-B50-04 4000PCS A0986 NOV/21/2005 b50 diode DIODE B50 PDF

    intel Q67

    Abstract: B50 diode smd FERRITE BEAD 1000 OHM 0805 LXT9785 RJ11 623 IC149-208-061-S5 sn74lvc244ad S54 SMD smd diode s4 2b S53 SMD diode
    Text: LXD9785 PQFP Demo Board with FPGA for RMII-to-MII Conversion Development Kit Manual January 2001 As of January 15, 2001, this document replaces the Level One document Order Number: 249324-001 LXD9785 PQFP Demo Board with FPGA for RMII-to-MII Conversion User Guide.


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    LXD9785 144QFP EPF10K10ATC14 EPF10K30ATC14 U14-29 SN74LVC244AD SC1566CM-2 NC7SZ125M5 EPM7032AETC4 intel Q67 B50 diode smd FERRITE BEAD 1000 OHM 0805 LXT9785 RJ11 623 IC149-208-061-S5 sn74lvc244ad S54 SMD smd diode s4 2b S53 SMD diode PDF

    calculator chip

    Abstract: DS8973N C1995 DS8973 N22A I-B0336
    Text: DS8973 9-Digit LED Driver General Description The DS8973 is a 9-digit driver designed to operate from 3-cell battery supplies Each driver will sink 100 mA to less than 0 7V when driven by only 0 1 mA Each input is blocked by diodes so that the input can be driven below ground with


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    DS8973 calculator chip DS8973N C1995 N22A I-B0336 PDF

    74LVX00

    Abstract: 74LVX00M 74LVX00MTC 74LVX00MTCX 74LVX00MX 74LVX00SJ 74LVX00SJX LVX00 M14A M14D
    Text: 74LVX00 Low Voltage Quad 2-Input NAND Gate General Description Features The LVX00 contains four 2-input NAND gates The inputs tolerate voltages up to 7V allowing the interface of 5V systems to 3V systems Y Y Y Y Logic Symbol Input voltage level translation from 5V to 3V


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    74LVX00 LVX00 C1996 74LVX00 74LVX00M 74LVX00MTC 74LVX00MTCX 74LVX00MX 74LVX00SJ 74LVX00SJX M14A M14D PDF

    Untitled

    Abstract: No abstract text available
    Text: STB4NB50 N - CHANNEL 500V - 2.5Û - 3.8A - D2PAK/I2PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 4N B50 500 V < 2.8 a 3.8 A • . . . . TYPICAL R D S (on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


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    STB4NB50 swi10 PDF

    1mb50-090a

    Abstract: ERD65-090 H150 1mb60-090
    Text: ERD65-090 30A * ± 'J K rHi FAST RECOVERY DIODE : Features • ¡ftMJ± High Voltage • Low forward Voltage drop. #/jvgu/\°.y4-—v Small Package Connection Diagram : Applications • W /ifc&tg ®® Voltage Resonance Power Supply Induction Heater • 1M B50-090A, 1 M B 6 0 -0 9 0 £ *fc f# ffl


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    ERD65-090 1MB50-090A, 1MB60-0903 1mb50-090a H150 1mb60-090 PDF

    Untitled

    Abstract: No abstract text available
    Text: STU16NB50 N-CHANNEL 500V - 0.28CI - 15.6A-Max220 PowerMESH MOSFET TYPE V STU 16N B50 • . . . . . dss 500 V R D S o n Id < 0.33 Q. 15.6 A TYPICAL RDS(on) = 0.28 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


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    STU16NB50 A-Max220 Max220 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB10NB50 N - CHANNEL 500V - 0.55Î2 - 1 0.6A - D2PAK PowerMESH MOSFET TYPE STB 10N B50 • . . . . . V dss R d S o ii 500 V < 0.60 Q. Id 1 0.6 A TYPICAL R D S (on) = 0.55 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


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    STB10NB50 O-263 PDF

    sc06140

    Abstract: powermesh mosfet STD3NB50
    Text: Zjï SGS-THOMSON STD3NB50 ¡ILIOTI^OKinei N - CHANNEL 500V - 2.5 ÌÌ - 3A - IPAK/DPAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STD 3N B50 500 V < 2.8 a 3 A • . . . . TYPICAL R D S ( o n ) = 2 . 5 EXTREMELY HIGH dv/dt CAPABILITY


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    STD3NB50 STD3NB50 0068771-E O-252 0068772-B sc06140 powermesh mosfet PDF

    STY34NB50

    Abstract: No abstract text available
    Text: STY34NB50 N - CHANNEL 500V - 0.11 - 34 A - Max247 PowerMESH MOSFET TYP E V S TY34N B50 dss 500 V R d S o ii Id < 0 .1 3 Q. 34 A . . TYPICAL RDs(on) = 0.11 EXTREMELY HIGH dv/dt CAPABILITY . ± 30V GATE TO SOURCE VOLTAGE RATING . 100% AVALANCHE TESTED


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    STY34NB50 Max247 TY34N GC75700 GC75710 Max247 STY34NB50 PDF

    Untitled

    Abstract: No abstract text available
    Text: • b 1353131 0024433 b50 « A P X N A HER PHILIPS/DISCRETE BBY42 b?E » J V V.H.F. VARIABLE CAPACITANCE DIODE The B B Y 4 2 is a variable capacitance diode in a microminiature plastic envelope SOT-23. It is intended for use in v.h.f. T V tuners and C A T V applications using S M D technology.


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    BBY42 OT-23. PDF

    3NB50

    Abstract: No abstract text available
    Text: SGS-THOMSON M TO »« STD3NB50 N - CHANNEL 500V - 2.5Q - 3A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE STD 3N B50 • . . . . V dss RDS on Id 500 V < 2.8 Q 3 A TYPICAL RDS(on) = 2.5 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


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    STD3NB50 3NB50 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STD1NB50 N - CHANNEL 500V - 7.5Î2 - 1 ,4A - IPAK PowerMESH MOSFET TYPE STD1N B50 V dss 500V Id R D S (o n ) < 9 Q. 1 .4 A . • TYPICAL RDS(on) = 7.5 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED


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    STD1NB50 O-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP10NB50 STP10NB50FP N - CHANNEL 500V - 0.55Î2 - 10.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE V dss R D S on Id S TP10N B50 S TP10N B50FP 500 V 500 V < 0.6 0 Q. < 0.6 0 Q. 1 0.6 A 1 0.6 A • . . . . TYPICAL RDS(on) = 0.55 £1 EXTREMELY HIGH dv/dt CAPABILITY


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    STP10NB50 STP10NB50FP O-220/TO-220FP TP10N B50FP PDF

    15NB50

    Abstract: 15N 50 mosfet SWITCHING WELDING SCHEMATIC BY MOSFET
    Text: s = 7 SGS-THOMSON ^ 7# K l « iL iM ( s iO ( g S S T W 15N B 50 N - CHANNEL ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOSFET PRELIMINARY DATA TYPE STW 15N B50 . m . . . . . V dss RDS(on) Id 500 V < 0 .3 6 Î2 14.6 A TYPICAL F tD S ( o n ) =0.33 £1 EXTREMELY HIGH dv/dt CAPABILITY


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: S G S -1H 0M S 0N M0 gfô l[L[i(3ra®«S STP9NB50 STP9NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V STP9N B50 STP9N B50FP dss 500 V 500 V R D S (o n Id < 0.8 5 Q. < 0.8 5 Q. 8 .6 A 4 .9 A . • TYPICAL R D S (on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY


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    STP9NB50 STP9NB50FP B50FP STP9NB50/FP O-22QFP PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 151MQ30 151MQ40 166A/30— 40V FEATURES o Hermetically Sealed Case • High Reliability Device 0 Low Power Loss, High Efficiency # High Surge Capability MAXIMUM RATIN GS \ type Voltage Rating ♦ 151MQ40 + 151MQ30 Unit Symbol\ Repetitive Peak


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    151MQ30 151MQ40 66A/30â 151MQ30 bbl5123 PDF

    50VF30

    Abstract: 50VF30F 50VF40 50VF40F
    Text: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300~400V/trr : 40nsec FEATURES 2.38M AX .094 ° T0-251AA Case n TO-252AA Case, Surface Mount Device • Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss » High Surge Capability


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    A/300 00V/trr 40nsec 50VF30 50VF40 50VF30F 50VF40F O-251AA O-252AA 50VF40F PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S Silicon Low Leakage Diode Array BAV 199 • Low-leakage applications • Medium speed switching times • Connected in series Type Marking Ordering Code tape and reel B A V 199 JY s Q62702-A921 Pin Configuration Package1) 3 SOT-23 EHA07005 Maximum Ratings per Diode


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    Q62702-A921 OT-23 EHA07005 fl535bOS D1ED421 PDF

    dd 76 N powerblock

    Abstract: powerblock dd 82 S 800 powerblock DD 76 N 1200 PB20S
    Text: Fast Diode Modules Type Schnelle Dioden-Module V RRM V Ifrm sm Ifsm ö3dt I f AV m / T c V TO A A A2s A/°C V 10 ms, 10 ms, T"v| max Tvi max ,103 V R SM = VRRm +100V (50Hz) rT m Irm A °c /w Tv,= Tv,= Tv,= 180° el Tvj max Tvi max max -di/dt = sin outline


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    DD122S PB50ND B50/1 43DP9 dd 76 N powerblock powerblock dd 82 S 800 powerblock DD 76 N 1200 PB20S PDF

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated


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    SQQ300BA60 200ns) hrEfe750 PDF

    SS2221

    Abstract: e31a
    Text: SILICON SW ITCHING DIODES 1SS222,1 SS223 HIGH SPEED SW ITCHING SILICON EPITAXIAL DIODES M IN I MOLD FE A T U R E S P A C K A G E D IM E N S IO N S in millimeters • L o w capacitance: Ct = 4 .0 pF M A X . • High speed sw itch ing: t rr = 3.0 ns M A X .


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    1SS222 SS223 1SS223 SS2221 e31a PDF

    1N2046-1

    Abstract: 1N1364 1N2048-1 1N1819 1N1826 1n260 1N1368 1N1604 1N1815 1N2041-1
    Text: SEHICON COMPONENTS INC 2ÖE D • Ö135157 0000023 2 ■ ZENER DIODES 10.0 WATT RATING DO-4 TYPE NUMBER NOMINAL ZENER VOLTAGE <V2) VOLTS 1N1351 1N1352 1N1353 1N1354 1N1355 NOMINAL ZENER VOLTAGE MAX. ZENER IMPED­ ANCE MAX, ZENER CURRENT *ZT MAX. ZENER IMPED­


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    1N1351 1N1821 1N1352 1N1822 1N1353 1N1823 1N1354 1N1824 1N1355 1N1B25 1N2046-1 1N1364 1N2048-1 1N1819 1N1826 1n260 1N1368 1N1604 1N1815 1N2041-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: E O PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23A1/2 PACKAGE DIMENSIONS DESCRIPTION I SECTION X-X LEAD PROFILE The H23A is a matched emitter-detector pair which consists of a gallium arsenide infrared emitting diode and a silicon phototransistor. The clear epoxy packaging


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    H23A1/2 ST1342 ST1220 ST1221 ST1222 4bbfl51 PDF