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    B54 MARKING Search Results

    B54 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    B54 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS540T3 MBRS540T3/D

    Untitled

    Abstract: No abstract text available
    Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS540T3 MBRS540T3/D

    CJ1H-CPU65H

    Abstract: CJ1G-CPU42H CJ1G-CPU45H CJ1M-CPU22 CJ1G-CPU43H CJ1M-CPU12 CJ1W-IC101 CJ1G-CPU44H CJ1M-CPU13 cj1w-oc211
    Text: CJ1 SERIES Contents Smallest, Most Powerful Solution for Tomorrow’s Advanced Production Systems We shrank our most powerful programmable controller by 40% to fit industry’s most space-confined cabinets. All of Omron’s outstanding performance was retained in the process: That includes the mix of standard and special I/O


    Original     		PDF B-108 CJ1G-CPU45H, CJ1H-CPU65H CJ1H-CPU66H CJ1G-CPU42H CJ1G-CPU43H CJ1G-CPU44H CJ1G-CPU45H CJ1M-CPU22 CJ1M-CPU12 CJ1W-IC101 CJ1M-CPU13 cj1w-oc211

    TESDV5V0

    Abstract: No abstract text available
    Text: TESDV5V0A Steering Diode Structure ESD Protection Array Small Signal Diode SOT-363 Features ­Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) ­Meet IEC61000-4-4 (EFT) rating. 40A (5/50 s) ­Protects four high speed I/O lines ­Working Voltage : 5V ­Pb free version, RoHS compliant, and Halogen free


    Original     		PDF OT-363 IEC61000-4-2 IEC61000-4-4 OT-363 MIL-STD-202, C/10s TESDV5V0

    MARKING CODE a11 sot363

    Abstract: POWER SUPPLY BOARD 94V
    Text: TESDV5V0A Steering Diode Structure ESD Protection Array Small Signal Diode SOT-363 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —Protects four high speed I/O lines —Working Voltage : 5V


    Original     		PDF OT-363 IEC61000-4-2 IEC61000-4-4 5/50s) OT-363 MIL-STD-202, C/10s MARKING CODE a11 sot363 POWER SUPPLY BOARD 94V

    B1C DIODE

    Abstract: IPB039N10N3 marking 1c marking a5 4r diode
    Text: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH


    Original     		PDF IPB039N10N3 B1C DIODE marking 1c marking a5 4r diode

    Untitled

    Abstract: No abstract text available
    Text: IPB039N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH


    Original     		PDF IPB039N10N3 381A75à C1A75Cà 931C9? C85AF9B5à

    Untitled

    Abstract: No abstract text available
    Text: IPB025N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc *&- Y I9 )0( 6 P฀GCA5=5<H฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH


    Original     		PDF IPB025N10N3 381A75à C1A75Cà 931C9? C85AF9B5à

    IPA105N15N3

    Abstract: IPA105N15N 81a diode
    Text: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H -( J R  , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P   S ? @5A1C9>7 C5=@5A1CDA5


    Original     		PDF IPA105N15N3 IPA105N15N 81a diode

    IPB025N10N3

    Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c
    Text: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH


    Original     		PDF IPB025N10N3 IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c

    Untitled

    Abstract: No abstract text available
    Text: IPA105N15N3 G TM  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H -( J R ,?>=1G฀ )(&- Y I9 +/ 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀ ฀S฀?@5A1C9>7฀C5=@5A1CDA5


    Original     		PDF IPA105N15N3 381A75à C1A75Cà 931C9? C85AF9B5à

    65A3

    Abstract: 5E DIODE marking c-9
    Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  I9   P ' 3 81>>5< >? A=1<<5E5<


    Original     		PDF IPB037N06N3 IPI040N06N3 IPP040N06N3 65A3 5E DIODE marking c-9

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB736A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA 1 0.55 Complementary to 2SD780A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original     		PDF 2SB736A OT-23 2SD780A.

    B52 transistor

    Abstract: MARKING B52 b53 SMD transistor b54 2SB736A B53 transistor PT-200 2SD780A b54 marking B52 MARKING
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB736A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA 1 0.55 Complementary to 2SD780A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Micro package.


    Original     		PDF 2SB736A OT-23 2SD780A. B52 transistor MARKING B52 b53 SMD transistor b54 2SB736A B53 transistor PT-200 2SD780A b54 marking B52 MARKING

    65a3

    Abstract: be5a IPB025N10N3G V9910 95E-9
    Text: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH


    Original     		PDF IPB025N10N3 726-IPB025N10N3G 65a3 be5a IPB025N10N3G V9910 95E-9

    Untitled

    Abstract: No abstract text available
    Text: IPB090N06N3 G IPP093N06N3 G Id\Q  3 Power-Transistor Product Summary Features P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H .( J R ,?>=1G฀,& 1 Y I9 -(


    Original     		PDF IPB090N06N3 IPP093N06N3 381A75à A53C96931C9? A1C54 C1A75Cà 931C9? C85AF9B5à

    Untitled

    Abstract: No abstract text available
    Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G  3 Power-Transistor Product Summary Features V 9H . J P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , R ,?>=1G฀,& +&/ Y P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ (&


    Original     		PDF IPB037N06N3 IPI040N06N3 IPP040N06N3 A53C96931C9? 381A75à A1C54 C1A75Cà 931C9?

    Untitled

    Abstract: No abstract text available
    Text: International k R ectifier HEXFET® Power MOSFET 4655452 0015b04 b54 • INR PD-9.618A IRFPF30 INTERNATIONAL RECTIFIER b5E T> • Dynamic dv/dt Rating • • • • • Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


    OCR Scan     		PDF 0015b04 IRFPF30 O-247 O-220 O-247

    Untitled

    Abstract: No abstract text available
    Text: PNP medium power transistor Die no. B-54 These are epitaxial planar PNP silicon transistors. Features • available in a MPT3 MPT, SOT-89 package, see page 300 • collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at lc = 1 mA • • Dimensions (Units : mm)


    OCR Scan     		PDF OT-89) BCX53 I70CP-C0LLECT0R

    transistor b54

    Abstract: b54 marking
    Text: PNP medium power transistor Die no. B-54 Dimensions Units : mm These are epitaxial planar PNP silicon transistors. MPT3 Features • • • available in a MPT3 (MPT, SOT-89) package, see page 300 1.6 ± 0 .1 -m collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at


    OCR Scan     		PDF OT-89) BCX53 BCX56, 170CP-C0LLECT0R transistor b54 b54 marking

    Untitled

    Abstract: No abstract text available
    Text: 3rd Angle System Unit : mm Drawing Not to Scale Tsuyama Matsushita Electric Co.,Ltd. Scope Control shown is designed in reference with our specifications. Also see samples attached. Mechanical Specifications : • Knob rotation angle • Knob stopper strength


    OCR Scan     		PDF

    marking g1

    Abstract: marking HA 7 sot23 transistor bfs20 BFS20
    Text: rZ 7 SGS-THOMSON WiCTOOieS BFS20 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS20 G1 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . COMMON EMITTER IF AMPLIFIER SOT-23 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BFS20 OT-23 OT-23 marking g1 marking HA 7 sot23 transistor bfs20 BFS20

    BFS55A

    Abstract: Bfs 60 60dBi transistor b54
    Text: SIEMENS BFS 55A NPN Silicon RF Transistor • For low-distortion broadband amplifiers up 1 at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFS 55A BFS 55A Q62702-F454


    OCR Scan     		PDF Q62702-F454 0Db7431 EHT08056 EHT03057 235fc BFS55A Bfs 60 60dBi transistor b54

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 17 SIPM O S Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • ^GS th = 2-1 4.0 V Type Vbs b f l DS(on) Package Marking BSP 17 50 V 3.2 A 0.1 ß SOT-223 BSP 17 Type BSP 17 Ordering Code Q67000-S220 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S220 E6327 fl235b05 235b05