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    B631 TRANSISTOR Search Results

    B631 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B631 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor D600k

    Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
    Text: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


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    2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K D600 PDF

    transistor D600k

    Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original
    ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor transistor B631K k b631k PDF

    2SB631K

    Abstract: D 600K
    Text: Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original
    ENN346G 2SB631, 631K/ 2SD600, 00V/120V, 100/120V, 2009B 631K/2SD600, O-126 2SB631K D 600K PDF

    2sb631 transistor

    Abstract: transistor b631 transistor D600k 2sb631 2sd600
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original
    ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 2sb631 transistor transistor b631 transistor D600k 2sd600 PDF

    b617

    Abstract: b649 b605 transistor b647 B647 b649 transistor transistor b647 bb pressure sensor circuit transistor B633 b63e
    Text: Signal Acquisition and Conditioning With Low Supply Voltages SLAA018 August 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information


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    SLAA018 TMS7000 MC68HC11 TLV1543 b617 b649 b605 transistor b647 B647 b649 transistor transistor b647 bb pressure sensor circuit transistor B633 b63e PDF

    SENSYM SX05

    Abstract: kty81 application note b627 B628 B658 b649 pressure sensor circuit Honeywell OR SenSym KTY81 Wheatstone Bridge operational amplifier
    Text: Signal Acquisition and Conditioning with Low Supply Voltages Heinz-Peter Beckemeyer Texas Instruments Deutschland GmbH June 1996 Contents 1. INTRODUCTION. 3 2. 3-V SUPPLY VOLTAGE . 4


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    TMS7000 MC68HC11 TLV1543 SENSYM SX05 kty81 application note b627 B628 B658 b649 pressure sensor circuit Honeywell OR SenSym KTY81 Wheatstone Bridge operational amplifier PDF

    HX8369

    Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
    Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010


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    HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A PDF

    S5 100 B112 MT RELAY

    Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
    Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1


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    VAT300 VAT300, ST-3450C E-08225 D-50677 F-93601 I-20092 B-9000 C/4566/E S5 100 B112 MT RELAY AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor PDF

    D600K

    Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
    Text: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.


    OCR Scan
    EN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K 2SD60 D600K B631k b631 k b631k D600K to 126 TO-126 D600 d600 2SB6 2Sd600 PDF

    D600K

    Abstract: B631K PNP 2SD 2SB631 631k D600K to 126
    Text: Ordering number:EN34SG 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications F e a tu re s • High breakdown voltage Vceo 100/120V, High current 1A. • Low saturation voltage, excellent hpE linearity.


    OCR Scan
    EN34SG 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K B631K, D600K B631K PNP 2SD 631k D600K to 126 PDF

    c4460

    Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
    Text: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4


    OCR Scan
    1503/C 1565/C 1574/C 1590/C 1616/C 1654/C C3820, 1782/C B1235/D C3151 c4460 d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895 PDF

    d1684

    Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
    Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249


    OCR Scan
    2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460 PDF

    d1878

    Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
    Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258


    OCR Scan
    A1527 A1528 A1537 A1540 A1573 A1574 A1575 A1580 A1590 A1607 d1878 D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459 PDF

    VEB mikroelektronik

    Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
    Text: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden


    OCR Scan
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