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    B6NB50

    Abstract: V435
    Text: B6NB50  N - CHANNEL 500V - 2.5Ω - 3.8A - D2PAK/I2PAK PowerMESH MOSFET TYPE ST B6NB50 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 5.8 Ω 3.8 A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


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    PDF STB6NB50 B6NB50 B6NB50 V435

    B6NB50

    Abstract: No abstract text available
    Text: B6NB50  N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAK PowerMESH MOSFET TYPE ST B6NB50 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 1.5 Ω 5.8 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original
    PDF STB6NB50 B6NB50 B6NB50