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    MSC2312A80YS9

    Abstract: MSC2312A-XX
    Text: > O K I 4 bE D • b724S4D □DDe1b7S BTT « O K U sem icon d u ctor MSC2312A-XXYS9/KS9 T - V<T- 23 1,048,576 BY 9 BIT DYNAMIC RAM MODULE O K I SEMICONDUCTOR GROUP GENERAL DESCRIPTION The Oki MSC2312A-XX YS9/KS9 is a fully decoded, 1,048,576 words x 9 bit CMOS dynamic random


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    PDF b724S4D MSC2312A-XXYS9/KS9 MSC2312A-XX MSM511000AJS) MSM511000A b724540 T-46-23-18 M777r/////////////////77777. MSC2312A80YS9

    256kx16 ucas zip

    Abstract: No abstract text available
    Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance


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    PDF MSM5416256/MSM54V16256 MSM5416256 256KX16 MSM54 DQ8-15 245MG 256kx16 ucas zip

    a10u

    Abstract: B724e
    Text: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.


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    PDF MSM514101B/BL 304-Word MSM514101B/BL 1024cycles/16ms, 128ms a10u B724e

    b72L

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V1000 1,048,576-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51V1000 is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM51V1000 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V1000 576-Word MSM51V1000 7E4240 b72L

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM27C101ZB 131,072-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C101ZB is a 1 Mb electrically Programmable Read-Only Memory organized as 131,072 words x 8 bits. The MSM27C101ZB operates on a single 5.0 V power supply and is TTL compatible. Since


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    PDF MSM27C101ZB 072-Word MSM27C101ZB 32pin 32-pin

    ic top 246 yn

    Abstract: MSM65514 MSM65P514 TSic 306
    Text: S &E D • b 7 2 4 E 4 D D D 1 3 Û 6 5 Sb4 H O K I J O K I Semlconauctor MSM65514/ 65P514 O K I S E M I C O N D U C T O R GR OU P T - OKI's ORIGINAL nX HIGH PERFORMANCE CMOS 8-BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION MSM65514 is a high-performance 8-bit single-chip controller that employs OKI's original nX-8/50 CPU core.


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    PDF b724B40 MSM65514/65P514_ MSM65514 nX-8/50 10MHz MSM65P514, -10MHz MSM65514/65P514 b724240 ic top 246 yn MSM65P514 TSic 306

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


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    PDF MSM56V16400 152-Word MSM56V16400 cycles/64 DD2D377

    BT 151 PIN DIAGRAM

    Abstract: MK31VT864A MK31VT864A-8YC
    Text: M K31VT864A-8YC 98.06.26 O K I Semiconductor M K 3 1 V T 8 6 4 A -8 Y C 8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK);_ DESCRIPTION The Oki MK31VT864A-8YC is a fully decoded, 8,388,608 x 64bit synchronous dynamic


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    PDF MK31VT864A-8YC MK31VT864A-8YC_ MK31VT864A-8YC 64bit 168-pin 64-Bit Lj7EM240 00271D1 BT 151 PIN DIAGRAM MK31VT864A

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23T/P1721 C-xxBS20 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D1721C-xxBS20 is a fully decoded 1,048,576-word x 72-bit CMOS Dynamic Random Access Memory Module composed of sixteen 4-Mb DRAMs 1M x 4 and four 2-Mb


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    PDF MSC23T/P1721 C-xxBS20 576-Word 72-Bit MSC23T/D1721C-xxBS20 168-pin 72-bit MSC23T1721C-xxBS20

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM6788 SBC SOLID-STATE RECORDER LSI GENERAL DESCRIPTION The MSM6788 is a solid-state-recorder developed using the Sub Band Coding SBC method. By externally connecting a microphone, a speaker, a speaker drive amplifier, and dedicated DRAM


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    PDF MSM6788 MSM6788 MSM6791 b724240 MSM6791,

    b72 voltage regulator

    Abstract: AN/URT-23E
    Text: O K I SEMI CONDUCTOR GROUP 23E D • b7S454D ~ T 'S L - \ Z □ OOti4=14 1 - o .s O K I semiconductor _ MSC1187-XX_ DOT DRIVER WITH DIMMING FUNCTION G ENERAL DESCRIPTION The MSC1187-XX is a vacuum fluorescent display tube driver IC using the Bi-CMOS process for


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    PDF b7S454D MSC1187-XX_ MSC1187-XX b72 voltage regulator AN/URT-23E