abb contactor b9 30 10
Abstract: IEC 158-1 VDE 0660 ABB EH550 contactors B75 contactor ABB ABB contactor B50 ABB EH300 Contactors abb EH700 B40 contactor ABB abb b12 contactor ABB EH175 Contactors
Text: Across the line contactors Type A, B & EH 1 B9 – B75, A95 – A110 • • • • • • • • • • • • • • • • • • • • AC 1000 – 2/97 • CONTACTORS: Selection: 1.4 - 1.7 EH145 – EH800 Maximum UL/CSA horsepower ratings • Maximum UL/CSA horsepower ratings
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EH145
EH800
EH300
EH450
abb contactor b9 30 10
IEC 158-1 VDE 0660
ABB EH550 contactors
B75 contactor ABB
ABB contactor B50
ABB EH300 Contactors
abb EH700
B40 contactor ABB
abb b12 contactor
ABB EH175 Contactors
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54B65
Abstract: 596B5
Text: MLX90121 13.56MHz RFID Transceiver Features and Benefits 1 1 1 1 Applications 1 Conforms with ISO14443B Conforms with ISO15693 Programmable encoder and decoder Low external component count (1) RATP / Innovatron 1 1 1 1 Portable data terminals Access control readers
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MLX90121
56MHz
ISO14443B
ISO15693
DAA-000
MLX90121EFR-DAA-000-RE
ISO14001
54B65
596B5
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Untitled
Abstract: No abstract text available
Text: SK50GH065F $ - ./ 01 Absolute Maximum Ratings Symbol Conditions IGBT ,2+ $3 - ./ 0 % $3 - 6./ 0 %:; 455 , /7 8 $ - 95 0 75 8 655 8 < .5 , $3 - 6./ 0 65 A $ - ./ 0 9. 8 $ - 95 0 /5 8 6.5 8 %:;- . % IGBT Module
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SK50GH065F
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Untitled
Abstract: No abstract text available
Text: SK50GH065F $ - ./ 01 Absolute Maximum Ratings Symbol Conditions IGBT ,2+ $3 - ./ 0 % $3 - 6./ 0 %:; 455 , /7 8 $ - 95 0 75 8 655 8 < .5 , $3 - 6./ 0 65 A $ - ./ 0 9. 8 $ - 95 0 /5 8 6.5 8 %:;- . % , - =55 ,> ,&2 ? .5 ,>
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SK50GH065F
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PDF
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SK50GH065F
Abstract: No abstract text available
Text: SK50GH065F $ - ./ 01 Absolute Maximum Ratings Symbol Conditions IGBT ,2+ $3 - ./ 0 % $3 - 6./ 0 %:; 455 , /7 8 $ - 95 0 75 8 655 8 < .5 , $3 - 6./ 0 65 A $ - ./ 0 9. 8 $ - 95 0 /5 8 6.5 8 %:;- . % , - =55 ,> ,&2 ? .5 ,>
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SK50GH065F
SK50GH065F
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PDF
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SK50GH065F
Abstract: No abstract text available
Text: SK50GH065F $ - ./ 01 Absolute Maximum Ratings Symbol Conditions IGBT ,2+ $3 - ./ 0 % $3 - 6./ 0 %:; 455 , /7 8 $ - 95 0 75 8 655 8 < .5 , $3 - 6./ 0 65 A $ - ./ 0 9. 8 $ - 95 0 /5 8 6.5 8 %:;- . % , - =55 ,> ,&2 ? .5 ,>
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SK50GH065F
SK50GH065F
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PDF
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ZENER B18
Abstract: b18 zener
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
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BZX55B
ZENER B18
b18 zener
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BZX55
Abstract: BZX55-B82 ZENER B18 zener b27 BZX 3,3 B2V7 BZX55-B15 BZX55B Zener B12 b2v4
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
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BZX55B
BZX55
BZX55-B82
ZENER B18
zener b27
BZX 3,3
B2V7
BZX55-B15
BZX55B
Zener B12
b2v4
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PDF
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F 407 Diode
Abstract: BBY31 BBY31 philips semiconductor SOT23 N1 "Variable Capacitance Diode"
Text: Philips Semiconductors_ • b b 5 3^31 □D5bl4l4D b75 W A P X Product specification Variable capacitance diode BBY31 b^E T> N AMER P H I L I P S / D I S C R E T E DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a m icrom iniature SOT23 envelope. It
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BBY31
BBY31
MBB110
F 407 Diode
BBY31 philips semiconductor
SOT23 N1
"Variable Capacitance Diode"
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NDL5003D
Abstract: NDL5003D1
Text: - 30 E D • b4 B75 S5 QQ^ERE 7 ■ N E C ELECTRONICS INC T'HI-O1? LASER DIODE J_NDL5003D 1 300 nm OPTICAL FIBER COM MUNICATIONS InGaAsP DC-PBH LASER DIODE D E SC R IPT IO N N D L 5 0 0 3 D is a 1 3 0 0 nm laser d io d e especially desig n ed fo r lo n g d ista n c e high c a p a c ity tra n sm issio n sy stem s. T h e DC-PBH
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b4B75S5
NDL5003D
NDL6003D
NDL5003D,
NDL5003D1.
b427SS5
N0LS100)
NDL5003D
NDL5003D1
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D 7^4142 IRF840/841/842/843 IRFP440/441 /442/443 D017323 b75 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R ds <on Im p ro ve d in du ctive r u g g e d n e s s F a s t sw itc h in g tim e s R u g g e d p o ly silic o n g a te cell stru ctu re
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IRF840/841/842/843
IRFP440/441
D017323
/IRFP441
IRFP440/441/442/443
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Untitled
Abstract: No abstract text available
Text: LA-601 BL Series F / Light Emitting Diodes LA-601 BL Series High-Efficiency Numeric Displays » LA-601 B L v ' J - X ' T ' l i , Dimensions Unit : mm I 'ilp f t T ' LED « fe , H fe , S fe , S e rie s iC iD x . T î i Ü S ® # f e f e f L A -6 0 1 BL
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LA-601
LA-601
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PDF
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nec 501 t
Abstract: NDL7800P iei-1209
Text: PRELIMINARY DATA SHEET LASER DIODE NDL7800P, NDL7801P 1 310 nm InGaAsP STRAINED MQW LASER DIODE MINI-DIL PIGTAILED MODULE DESCRIPTION NDL7800P and NDL7801P are 1 310 nm strained Multiple-Quantum Well MQW laser modules with single mode fiber (SMF) pigtail. NDL7800P is packaged in ceramic and NDL7801P is packaged in plastic.
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NDL7800P,
NDL7801P
NDL7800P
NDL7801P
NDL7800P:
NDL7801P:
b427S25
NDL7800P.
nec 501 t
iei-1209
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI -CDGTL L O GI C! b S l4ciñ27 0 D 1 S 2 5 7 b MITSUBISHI ASTTLs & M74AS832BP 7 -V 3 -ÏS HEX 2-IN PU T OR DRIVER 6249827 MITSUBISHI CD G T L LOGIC DESCRIPTION Th e M 74A S 832B P is a sem iconductor integrated circuit 91D D PIN CONFIGURATION TOP VIEW)
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M74AS832BP
24P4D
24-PIN
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Untitled
Abstract: No abstract text available
Text: OPTEK Product Bulletin OP168F June 1996 G aA s Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC Features • Flat lensed for wide radiation angle • Easily stackable on 0.100 inch 2.54mm hole centers • Mechanically and spectrally matched
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OP168F
OP168FA,
OP168FB,
OP168FC
OP508F
OP538F
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PDF
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24v 8 channel Relay driver
Abstract: M54562P darlington Mitsubishi npn transistor w27 20C01 Mitsubishi darlington NPN Darlington transistor 8-channel PNP darlington array
Text: 1 MITSUBISHI BIPOLAR DIGITAL ICs fe>3E • 1,24^057 0015D75 TbT B in iTB MITSUBISHI DGTL LOGIC M C A C ß O D l¥l54SoZP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY W ITH CLAM P DIODE DESCRIPTION The M54562P, 8-channel source driver, is designed for use
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001SD75
500mA
M54562P,
500mA
M54562P
1SD77
M54562P
-20-C
24v 8 channel Relay driver
darlington Mitsubishi
npn transistor w27
20C01
Mitsubishi darlington
NPN Darlington transistor
8-channel PNP darlington array
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PDF
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S-808b
Abstract: S808B
Text: M ITSUBISHI ASTTLs M 74A S808B P HEX 2-IN PUT AND DRIVER DESCRIPTION The M 74A S 808B P is a sem iconductor integrated circuit PIN CONFIGURATION TOP VIEW — w — consisting of six 2-input positive-logic A N D buffer gates, usable as n egative-log ic OR buffer gates.
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S808B
S-808b
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PDF
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54527p
Abstract: M54527
Text: M I T S U B I S H I B IP O L A R D IG I T A L ICs M54527P 6 -U N IT 150mA DARLINGTON TR A N S ISTO R ARRAY W IT H C L A M P DIODE DESCRIPTION The M54527P, 6-channel sink driver, consists of 12 NPN tran sistors connected to form high current gain driver pairs.
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M54527P
150mA
M54527P,
--40V
54527p
M54527
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PDF
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ym 238
Abstract: IC P 621
Text: LA-621 AK Series ' C ' t — F / Light Emitting Diodes LA-621 A K S e rie s Two color High Luminance LED Numeric Displays • W f i N f & E I / D im e n s io n s U n i t : m m LA-621 IC x -tf-f > i n t 2 6 S 3 t *s, m om Series LA-621AK represent 2-color,
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LA-621
LA-621
LA-621AK
ym 238
IC P 621
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PDF
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LC125A
Abstract: 54661P
Text: M IT S U B IS H I BIPOLAR DIGITAL ICs M 54661P 4 -U N IT HIGH VO LTAG E 1.5A DA RLIN G TO N T R A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION The M54661P, 4-channel sink driver, consists of 4 PNP and 3 NPN transistors to from four high current gain driver pairs.
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54661P
M54661P,
LC125A
54661P
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Transistor TT 2140
Abstract: npn transistor w27 b24jf 251C M54526P bipolar power transistor driver circuit bipolar dc clamp
Text: b 2 4 clflB 7 b3E D 0M 11D M IT S U B IS H I DGTL 51? H n iT 3 M ITSUBISHI BIPOLAR DIGITAL ICS M54526P LOGIC 7-U N IT 500m A DARLINGTON TR A N S IS TO R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 54526P, 7 -ch an n e l sink driver, consists of 14 N PN tran
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Jfl27
M54526P
M54526P,
500mA
M54526P
Transistor TT 2140
npn transistor w27
b24jf
251C
bipolar power transistor driver circuit
bipolar dc clamp
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PDF
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m54561
Abstract: No abstract text available
Text: M ITS U B IS H I B IP O L A R D IG IT A L ICs M54561P 7 -U N IT 300m A SOURCE T Y P E DA RLIN G TO N T R A N S IS T O R ARRAY W ITH C L A M P DIODE DESCRIPTION The M54561P, 7-channel source driver, consists of 7 PNP and PIN CONFIGURATION TOP VIEW TJ- 14 NPN transistors connected to form high current gain driv
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M54561P
M54561P,
300mA
m54561
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PDF
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M54527P
Abstract: transistor bipolar driver schematic
Text: t>3E • MITSUBISHI BIPOLAR DIGITAL ICs b24Tfl2? 0 0 1 4 ^ 3 22b ■ M I T 3 M 54527P MITSUBISHI DGTL LOGIC 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY W ITH CLAMP DIODE DESCRIPTION The M54527P, 6-channel sink driver, consists of 12 NPN tran PIN CONFIGURATION (TOP VIEW)
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M54527P
150mA
M54527P,
150mA
M54527P
310Hz
Ta-75t;
transistor bipolar driver schematic
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PDF
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Untitled
Abstract: No abstract text available
Text: • b3E bSMTôS? DGlSlMb MITSUBISHI D6 TL D4 T ■ M I T 3 M ITSU B ISH I BIPOLAR DIGITAL ICs M54594P LOGIC 4 -U N IT HIGH VO LTAGE 1.5A D ARLINGTON T R A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION The M 54594P 4-channel sink diver, consists of 8 NPN tran
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M54594P
54594P
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