MSM511665-10
Abstract: MSM511665-80
Text: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the MSM511665 is OKI's CMOS silicon gate process technology.
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b724240
MSM511665
536-WORD
16-BIT
MSM511665
W15/I015
Lj7BM240
MSM511665'
VOH-W15/1015
MSM511665-10
MSM511665-80
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MAX184
Abstract: MAX525 MSM27C256HZB
Text: 5ÖE D • b754240 O K I O K I s e m GG1333b BbO H O K I J SEM ICONDUCTOR GROUP ic o n d u c to r - r - ^ / s - a s " MSM27C256HZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory.
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242M0
001333b
MSM27C256HZB
768-Word
MSM27C256HZB
28-pin
32-tead
MAX184
MAX525
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Untitled
Abstract: No abstract text available
Text: 4bE 1 m b754240 0011635 445 H O K I J O K I semiconductor_ t-sz - i3-o r MSM6568 OKI SEMICONDUCTOR GROUP LCD Dot Matrix Common Driver TAB GENERAL DESCRIPTION The MSM6568 is a LCD dot matrix common driver of a CMOS 1C which consists of a 160-bit
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b754240
MSM6568
MSM6568
160-bit
FFMSM6549
MSM6568a
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MSM5116160
Abstract: dq8e N4409
Text: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er
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MSM5116160
576-Word
16-Bit
MSM5116160
42-pin
50/44-pin
dq8e
N4409
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transistor sl 431
Abstract: ZIP40-P-475
Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.
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MSM514190/SL_
144-Word
18-Bit
MSM514190/SL
theMSM514190/SL
cycles/16ms,
transistor sl 431
ZIP40-P-475
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PDF
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OCV CM 1092
Abstract: SP 1191 MSM6576
Text: O K I Semiconductor MSM6576-XX_ Operatable at 0.9V and 7-level Detector 4-Bit Microcontroller GENERAL DESCRIPTION M SM 6576 is a 4-bit, low -pow er m icrocontroller that is manufactured in a C M O S silicon-gate process. The m icrocontroller can be started and operated at a low supply voltage of 0.9 V.
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MSM6576-XX_
MSM6576
L72424G
0G24G13
OCV CM 1092
SP 1191
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MSM64162-XXX
Abstract: MSM64162 sis 496 Ml17
Text: O K I Semiconductor M S M 6 4 1 6 2 _ Built-in RC Oscillator type A/D Converter and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The M SM 64162 is a low pow er 4-bit m icrocontroller using O K I original C P U core n X -4 /2 0 . The M SM 64162 has the m inim u m instruction execution tim e o f 7.5 |is @ 400 kH z and has
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MSM64162_
MSM64162
nX-4/20.
2016-byte
128-nibble
MSM64162
b7e4E40
MSM64162-XXX
sis 496
Ml17
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active suspension
Abstract: m56v16 m56v1640010
Text: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-w ord x 4-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
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MSM56V16400_
152-Word
MSM56V16400
cycles/64
b7E424G
DD2Q377
active suspension
m56v16
m56v1640010
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MSM531021B
Abstract: No abstract text available
Text: O K I Semiconductor M SM 531021B 131,072-Word x 8-Bit Mask ROM DESCRIPTION i S ^ M 5310218 is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 8-bit capacity. The MSM531021B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro
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MSM531021B
072-Word
MSM531021B
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MSM511000
Abstract: ZIP20-P-400 msm511000h
Text: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power
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MSM511000H_
576-Word
MSM511000H
18-pin
26/20-pin
20-pin
MSM511000
ZIP20-P-400
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PDF
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Piezo sounder
Abstract: TONE/VOLUME CONTROL CIRCUIT MSM6895 MSM7502 MSM7502GS-BK MSM7543 RM01
Text: O K I Semiconductor MSM7502 Multi-Function PCM CODEC G E N E R A L D E S C R IP T IO N The M SM 7502, developed especially for low -pow er and m ulti-function applications in touch tone telephone sets and digital telephone term inals o f digital PBXs, is a single +5 V pow er supply
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MSM7502_
MSM7502,
MSM7543
MSM7502
Piezo sounder
TONE/VOLUME CONTROL CIRCUIT
MSM6895
MSM7502GS-BK
RM01
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The
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MSM511001B
576-Word
MSM511001B
R1001B
D0177fiD
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A5 GNC
Abstract: TSOP32-P-4QO-K 51V17400 5116100
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64m
A5 GNC
TSOP32-P-4QO-K
51V17400
5116100
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m51171
Abstract: No abstract text available
Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.
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MSM51V17180
576-Word
18-Bit
MSM51V17180
cycles/32ms
m51171
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Untitled
Abstract: No abstract text available
Text: O K I S E M I C O N D U C T O R GR O U P S3E D b 7 S 4 S M Q OOOTTfifl 1 T -41-07 84/im LED ¿iv*—T-i- -V ' .• . . ^ •>>;’ Sölili E804D/0E805D • DESCRIPTION The OE804D, OE805D are 840 nm AIGaAs Double Heterostructure LEDs developed as light sources'for fiber-optic communications.
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84/im
E804D/0E805D
OE804D,
OE805D
OE804D
QE805D
b754240
0E805D
T-41-07
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fluorescent Display driver
Abstract: No abstract text available
Text: _ SÔE D • b 7 2 M E M G O O l M M b ô 74R H O K I J O K I Semiconauctor M S L 917 O K I SEMICONDUCTOR CROUP — f - S 2 - [$- 1 9 8-BIT PARALLEL-IN PARALLEL-OUT GENERAL DESCRIPTION Input may be driven directly by the TTL or CMOS. The vacuum fluorescent display tube
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MSL917
MSL917
b754240
DD14471
fluorescent Display driver
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PDF
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MSM5116180-70
Abstract: MSM5116180-80
Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
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MSM5116180_
576-Word
18-Bit
MSM5116180
cycles/64ms
MSM5116180-70
MSM5116180-80
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PDF
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Bv 42 transistor
Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64ms
Bv 42 transistor
M5116
tsop50
42-PIN
50-PIN
MSM51V16190-70
MSM51V16190-80
TSQP28-P-400-K
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PDF
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001472
Abstract: No abstract text available
Text: Sfl E D • b7EMEM0 001M712 446 MOKIJ -S 2 / M 5 -Æ O K I MSC7125-XX ? SEMI CONDUCTOR GROUP 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-xx is a Bi-CMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-xx drives displays with up to
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b7EME40
MSC7125-XX
MSC7125-xx
16-bit
SEG36-40
SEG1-35
001472
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PDF
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cd 4069 pin data
Abstract: 82C43 CI 4069 cjne MSM80C31F MSM80C31 MSM80C51F *82c43 80C31F
Text: O K I SEMICONDUCTOR GROUP IDE D | t.754S4D Q003b78 7 | C 5 1 1 C .1 I s e m i c o n c a y c t o r M S M 8 0 C 3 1 F /M S M 8 0 C 5 1 F -t - w - h - p i - n '- * - * ! CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51F m icrocontroller is a low power, high performance 8-bit single
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Q003b78
-r-w-11-01
MSiVI80C31
F/MSM80C51F
MSM80C31F/MSM80C51F
MSM80C51F
16-bit
cd 4069 pin data
82C43
CI 4069
cjne
MSM80C31F
MSM80C31
*82c43
80C31F
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PDF
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32-PIN
Abstract: A10E MSM51V16900-70 MSM51V16900-80
Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.
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MSM51V16900_
152-Word
MSM51V16900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
32-PIN
A10E
MSM51V16900-70
MSM51V16900-80
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PDF
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Bv 42 transistor
Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
Bv 42 transistor
tsop50
42-PIN
MSM5116190-70
MSM5116190-80
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PDF
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MSM6351
Abstract: QFP100-P-1420-K SEG60 hz-02 IRQP20 OKI msm6351
Text: 5ÔE D • b ? 2 4 2 4 G Q D 1 3 b ? E 044 « O K I J OKI semiconductor \-^9-13-^4 MSM6351 O K I S E M I C O N D U C T O R GROUP CMOS 4-BIT HIGH PERFORMANCE AND VERY LOW POWER SINGLE CHIP MICROCONTROLLER WITH LCD DRIVER GENERAL DESCRIPTION O K I’s M S M 6 3 5 1 is a low -pow er, h ig h -p erfo rm an ce sin gle-ch ip m icrocontroller em ploying silicon
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b7E4240
MSM6351
QFP100-P-1420-K
SEG60
hz-02
IRQP20
OKI msm6351
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PDF
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dynamic ram binary cell
Abstract: No abstract text available
Text: O K I SEMICONDUCTOR GROUP AT ,6 7 ? 4 2 4 0 O K I O K I SEMICONDUCTOR GROUP 89D 0 2 7 4 6 D L724S40 0D0274L, 4 -c ? 3 '/7 semiconductor_ MSC2311YS8/KS8_ 1,048,576 BY 8 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2311Y S8/KS8 is a fu lly decoded, 1,048,576 words X 8 bit NMOS dynamic random
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L724S40
0G027ML,
MSC2311YS8/KS8
MSC2311YS8/KS8
MSM411000JS)
MSM411000JS;
dynamic ram binary cell
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PDF
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