D010
Abstract: OLD234 910nm
Text: O K I electronic com ponents OLP234 GaAIAs Infrared Light Emitting Diode G E N E R A L D ESC R IPT IO N The OLD234 is a high-output GaAIAs infrared light em ission micro-diode sealed w ith a transparent epoxy resin in a TO-46 case. Its light em ission w ave peaks at 910 nm.
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OLD234
OLD234
72424D
754E40
Ifm/100
b724240
001fifl72
D010
910nm
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M SC23109C/CL-XXPS3 1,048,576-Word x 9-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23109C/CL-xxDS3 is a fully decoded 1,048,576-word x 9-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs 1M x 4 in SOJ packages and
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SC23109C/CL-XXPS3
576-Word
MSC23109C/CL-xxDS3
30pin
30-Pin
MSC23109C
L724240
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B754
Abstract: S4240
Text: O K I Semiconductor MSM51 V16800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology.
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MSM51V16800_
152-Word
MSM51V16800
cycles/64ms
MSM51V16800
A0-A11
b724240
B754
S4240
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S82V16520
Abstract: 533 BA MS82V16520 QFP100-P-1420-0 AX2002 S82V
Text: E2L0056-28-91 % This version: Sep. 1998 O K I Semiconductor M S82V16 5 2 0 2 62 ,14 4 -W o rd x 3 2 -B it x 2 -B a n k Synchronous G raphics R AM D E S C R IP TIO N The MS82V16520 is a synchronous graphics random access m em ory organized as 256 K w o r d s x 3 2
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E2L0056-28-91
MS82V16520
MS82V16520
72424G
DD275Qti
S82V16520
533 BA
QFP100-P-1420-0
AX2002
S82V
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6981-01 32 kbps ADPCM TRANSCODER GEN ERA L DESCRIPTION The MSM6981-01 is for performing high-frequency compression to code an A /D converted audio-band PCM signal into an ADPCM signal with a transmission rate of 32 kbps, or conversely
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MSM6981-01
MSM6981-01
MSM6981-01.
b724240
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