Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
PD448012-X
Abstract: 12X18 PD448012
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
Original
|
PD448012-X
512K-WORD
16-BIT
PD448012-X
48-pin
I/O16)
12X18
PD448012
|
PDF
|
uPD444012AGY-B70X-MJH-A
Abstract: UPD444012AGY-B55X-MJH-A
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
Original
|
PD444012A-X
256K-WORD
16-BIT
PD444012A-X
48-pin
I/O16)
uPD444012AGY-B70X-MJH-A
UPD444012AGY-B55X-MJH-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
Original
|
PD442012L-X
128K-WORD
16-BIT
PD442012L-X
48-pin
I/O16)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
|
Original
|
PD4632312-X
32M-BIT
16-BIT
PD4632312-X
77-pin
I/O15)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
Original
|
PD444010L-X
512K-WORD
PD444010L-X
48-pin
|
PDF
|
442000L-C12X
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000L-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.
|
Original
|
PD442000L-X
256K-WORD
PD442000L-X
32-pin
36-pin
442000L-C12X
|
PDF
|
uPD4632312F9-BE95X-BT3
Abstract: uPD4632312-X
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
|
Original
|
PD4632312-X
32M-BIT
16-BIT
PD4632312-X
77-pin
I/O15)
-B85X)
uPD4632312F9-BE95X-BT3
uPD4632312-X
|
PDF
|
AM 5888
Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
Text: Through the latest technological advancements, we're developing new memory products to meet present and future needs. NEC Electronics is a market leader in memory products, continuously delivering products with the latest cutting-edge technology. Today, a new demand is
|
Original
|
M16000EJEV0SG00
AM 5888
SAMSUNG mcp Reliability
SAMSUNG MCP
PD23C32000A
B12 nec diode
cypress flash 370
SUNRISE TSOP 12 20
a85x
E40/16/12
pd442
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
Original
|
PD444012A-X
256K-WORD
16-BIT
PD444012A-X
48-pin
I/O16)
85ine
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444012L-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
Original
|
PD444012L-X
256K-WORD
16-BIT
PD444012L-X
48-pin
I/O16)
|
PDF
|
48-pin TSOP I flash memory
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD448010-X 8M-BIT CMOS STATIC RAM 1M-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448010-X is a high speed, low power, 8,388,608 bits 1,048,576 words by 8 bits CMOS static RAM. The µPD448010-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
Original
|
PD448010-X
PD448010-X
48-PIN
48-pin TSOP I flash memory
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000L-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.
|
Original
|
PD442000L-X
256K-WORD
PD442000L-X
32-pin
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The μPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
Original
|
PD444012A-X
256K-WORD
16-BIT
PD444012A-X
48-pin
I/O16)
|
PDF
|
UPD448012GY-B55X-MJH-A
Abstract: uPD448012GY-B70X-MJH
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
Original
|
PD448012-X
512K-WORD
16-BIT
PD448012-X
48-pin
I/O16)
UPD448012GY-B55X-MJH-A
uPD448012GY-B70X-MJH
|
PDF
|
PD448012-X
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
Original
|
PD442012L-X
128K-WORD
16-BIT
PD442012L-X
48-pin
I/O16)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿¿PD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The ^¡PD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
|
OCR Scan
|
PD442012L-X
128K-WORD
16-BIT
uPD442012L-X
PD442012L-X
48-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT _ ¿¿PD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ^¡PD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM.
|
OCR Scan
|
PD442000L-X
256K-WORD
PD442000L-X
uPD442000L-X
32-pin
P32GU-50-9KH-1
PD442000L-X.
D442000LGU-BX-9JH:
|
PDF
|
d44401
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 0 L - X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM.
|
OCR Scan
|
512K-WORD
uPD444010L-X
48-pin
PD444010L-X
PD444010L-X.
UPD444010LGY-B
12x18
d44401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 2 L - X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM.
|
OCR Scan
|
256K-WORD
16-BIT
uPD444012L-X
48-pin
M13961EJ3V0DS00
PD444012L-X.
juPD444012L-X
PD444012LGY-BxxX-MJH:
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.
|
OCR Scan
|
iuPD441000L-X
128K-WORD
uPD441000L-X
PD441000L-X
32-pin
36-pin
|
PDF
|