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    Banner Engineering Corp LEDRB85X220M

    PRESENCEPLUS 85 X 220 MM BACKLIG
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    DigiKey LEDRB85X220M Box 1 1
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    Newark LEDRB85X220M Bulk 1
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    Banner Engineering Corp LEDRB85X220W

    PRESENCEPLUS 85 X 220 MM BACKLIG
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    DigiKey LEDRB85X220W Box 1
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    Banner Engineering Corp LEDRB85X220QPMA

    LED Backlighting PresencePLUS 85 x 220 mm Backlight; Visible Red LED 24 V dc; 4-pin M12 male Connector Pin 2 OPEN
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    Mouser Electronics LEDRB85X220QPMA
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    Newark LEDRB85X220QPMA Bulk 1
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    Banner Engineering Corp LEDIB85X220M

    LED Backlighting PresencePLUS 85 x 220 mm Backlight; Infrared LED 24 V dc; 2 m (6.5 ft) cable with 3-pin male Connector; Connects to P4
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    Mouser Electronics LEDIB85X220M
    • 1 $767
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    Newark LEDIB85X220M Bulk 1
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    Banner Engineering Corp LEDIB85X220QPMA

    LED Backlighting PresencePLUS 85 x 220 mm Backlight; Infrared LED 24 V dc; 4-pin M12 male Connector Pin 2 OPEN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LEDIB85X220QPMA
    • 1 $767
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    Newark LEDIB85X220QPMA Bulk 1
    • 1 $781
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    B85X Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    PD448012-X

    Abstract: 12X18 PD448012
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    PD448012-X 512K-WORD 16-BIT PD448012-X 48-pin I/O16) 12X18 PD448012 PDF

    uPD444012AGY-B70X-MJH-A

    Abstract: UPD444012AGY-B55X-MJH-A
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    PD444012A-X 256K-WORD 16-BIT PD444012A-X 48-pin I/O16) uPD444012AGY-B70X-MJH-A UPD444012AGY-B55X-MJH-A PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    PD442012L-X 128K-WORD 16-BIT PD442012L-X 48-pin I/O16) PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.


    Original
    PD4632312-X 32M-BIT 16-BIT PD4632312-X 77-pin I/O15) PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    PD444010L-X 512K-WORD PD444010L-X 48-pin PDF

    442000L-C12X

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000L-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original
    PD442000L-X 256K-WORD PD442000L-X 32-pin 36-pin 442000L-C12X PDF

    uPD4632312F9-BE95X-BT3

    Abstract: uPD4632312-X
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.


    Original
    PD4632312-X 32M-BIT 16-BIT PD4632312-X 77-pin I/O15) -B85X) uPD4632312F9-BE95X-BT3 uPD4632312-X PDF

    AM 5888

    Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
    Text: Through the latest technological advancements, we're developing new memory products to meet present and future needs. NEC Electronics is a market leader in memory products, continuously delivering products with the latest cutting-edge technology. Today, a new demand is


    Original
    M16000EJEV0SG00 AM 5888 SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    PD444012A-X 256K-WORD 16-BIT PD444012A-X 48-pin I/O16) 85ine PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444012L-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    PD444012L-X 256K-WORD 16-BIT PD444012L-X 48-pin I/O16) PDF

    48-pin TSOP I flash memory

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD448010-X 8M-BIT CMOS STATIC RAM 1M-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448010-X is a high speed, low power, 8,388,608 bits 1,048,576 words by 8 bits CMOS static RAM. The µPD448010-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    PD448010-X PD448010-X 48-PIN 48-pin TSOP I flash memory PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000L-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.


    Original
    PD442000L-X 256K-WORD PD442000L-X 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The μPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    PD444012A-X 256K-WORD 16-BIT PD444012A-X 48-pin I/O16) PDF

    UPD448012GY-B55X-MJH-A

    Abstract: uPD448012GY-B70X-MJH
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    PD448012-X 512K-WORD 16-BIT PD448012-X 48-pin I/O16) UPD448012GY-B55X-MJH-A uPD448012GY-B70X-MJH PDF

    PD448012-X

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    Original
    PD442012L-X 128K-WORD 16-BIT PD442012L-X 48-pin I/O16) PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿¿PD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The ^¡PD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.


    OCR Scan
    PD442012L-X 128K-WORD 16-BIT uPD442012L-X PD442012L-X 48-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT _ ¿¿PD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ^¡PD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM.


    OCR Scan
    PD442000L-X 256K-WORD PD442000L-X uPD442000L-X 32-pin P32GU-50-9KH-1 PD442000L-X. D442000LGU-BX-9JH: PDF

    d44401

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 0 L - X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM.


    OCR Scan
    512K-WORD uPD444010L-X 48-pin PD444010L-X PD444010L-X. UPD444010LGY-B 12x18 d44401 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 2 L - X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM.


    OCR Scan
    256K-WORD 16-BIT uPD444012L-X 48-pin M13961EJ3V0DS00 PD444012L-X. juPD444012L-X PD444012LGY-BxxX-MJH: PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.


    OCR Scan
    iuPD441000L-X 128K-WORD uPD441000L-X PD441000L-X 32-pin 36-pin PDF