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    Untitled

    Abstract: No abstract text available
    Text: bL53131 005033S T 2SE D N AMER PHILIPS/DISCRETE P o w e rM O S tra n s is to r B U K 4 4 2-60 A B U K 442-60B T - G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    application for bt 151

    Abstract: LTE42005S LTE42008R R3305
    Text: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich


    OCR Scan     		PDF bL53131 LTE42005S LTE42008R LTE42005S application for bt 151 LTE42008R R3305

    philips cnx82a

    Abstract: CNX83A CNX82A DE0805 435A CNX83 PHHI BS415 BS7002 25KVDC
    Text: Produ ct sp ecification Philip» Semiconductors High-voltage optocouplers CNX82A/CNX83A FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL Integrated circuits • High degree of A C and DC insulation 3750 V (RMS and


    OCR Scan     		PDF CNX82A/CNX83A CNX82Aand CNX83Aare OT231 CNX82A CNX83A. CNX82A CNX83A bL53131 philips cnx82a CNX83A DE0805 435A CNX83 PHHI BS415 BS7002 25KVDC