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    BM574M Search Results

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    NE250

    Abstract: NE25000 dual-gate
    Text: I SEC N E C / CALIFORNIA 15E I • bM574m HIGH PERFORMANCE DUAL-GATE G aAs MESFET FEATURES • V E R Y HIGH fM Ax: 60 GHz • TWO IN DEPEN DENT G A T E S FO R DESIGN F L E X IB IL IT Y Ta = 25°C) SYM BO LS PA R A M ETER S UNITS RATINGS Vos Drain to Source Voltage


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    PDF b4S7414 NE25000 NE250 NE25000 dual-gate

    2SC1593

    Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
    Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is


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    PDF b427414 NE64300 NE64310 NE64320 NE643 NE64300) NE64310) NE64320) 2SC1593 2SC1041 GE-64 NEC k 2134 transistor NE64320 V020 transistor BU 189