BA244
Abstract: BA243 diode 243 diode 244 DIODE BA243 BA diode ba 243 rf Q62702-A4
Text: SIEM ENS BA 243 BA 244 Silicon RF Switching Diodes • For VHF band switching in TV tuners • Not for new design Type Marking Ordering Code Pin Configuration BA 243 yellow Q62702-A521 Q62702-A421 BA 244 ¿ Kl 1 Package1 o DO-35 DHD EHA07001 Maximum Ratings
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Q62702-A521
eha07001
DO-35
Q62702-A421
E35bOS
100MHz
BA244
BA243
diode 243
diode 244
DIODE BA243
BA diode
ba 243 rf
Q62702-A4
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diode 244
Abstract: diode 243 diode ba 244 BA244S BA244 BA243 ba 243 rf DIODE BA243 Q62702-A607 ba capacitance diode
Text: SIEM EN S BA 243 S BA 244 S Silicon RF Switching Diodes • For VHF band switching in TV tuners • Low forward resistance and low diode capacitance • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 243 S yellow Q62702-A607 DO-35 DHD
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Q62702-A607
eha07001
DO-35
Q62702-A618
0235bOS
diode 244
diode 243
diode ba 244
BA244S
BA244
BA243
ba 243 rf
DIODE BA243
ba capacitance diode
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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ba 243 rf
Abstract: BA244 BA243 diode 244 ba capacitance diode ba rf JEDEC to 243
Text: «H» BA 243 •BA 244 'W Silizium-Planar-Dioden Silicon planar diodes Anwendungen: Bereichsumschaltung in VHF-Tunern Applications: Band selector in VHF-tuners Besondere Merkmale: Features: • Niedriger differentieller Durchlaßwiderstand im VHF-Bereich • Low differential forward resistance in
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DIODE BA243
Abstract: BA243 BA243 diode 0588 JEDEC to 243 diode 244 BA244
Text: A E G CORP 17E QQETMab o o o ' m s D & 2 • BA 243 •BA 244 TjTSLGiiFüfllîiBSIMelectronic Creative Techno'ogres Silicon Planar Diodes A p p lica tio n s: Band selector in VHF-tuners Features: • Low differential forward resistance in VHF-range Low diode capacitance
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BA243
DIODE BA243
BA243 diode
0588
JEDEC to 243
diode 244
BA244
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BA389 PIN Diode
Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Text: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure
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BA282
BA284
BA389 PIN Diode
ba389
BA284
V/BA389 PIN Diode
BA389 diode
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BA163
Abstract: dk qs BA 30 C Diode BA 163 BA244 QS700
Text: Silicon Capacitance Diodes Germanium Diodes Silicon Epitaxial Planar C apacitance Diode in DO-7 glass package w itn w ide e ffective capacitance variation fo r tun ing over the total fre quency range in short-wave, medium-wave, and long-w ave circu its Type
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ba 243 rf
Abstract: No abstract text available
Text: POWER SPLITTERS/COMBINERS 2 WAY-180° 50 & 75Ω 10 kHz to 2 GHz SURFACE MOUNT SCPJ PSCJ-2 ZFSCJ-2 FREQ. RANGE MHz ZAPDJ-2 ISOLATION dB ZMSCJ-2 INSERTION LOSS, dB Above 3dB fL-fU L MJ U Typ.Min. Typ.Min. Typ.Min. Typ. Max. Typ. Max. Typ. Max. Max. Max. Max.
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WAY-180°
SCPJ-2-1W-75
SCPJ-2-750-75
PSCJ-2-1-75
ba 243 rf
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Untitled
Abstract: No abstract text available
Text: Pow er Sputters/C om biners 2 Way- 180° 50 & 7 5 0 io kHz to2 ghz SURFACE MOUNT SCPJ PSCJ-2 ZFSCJ-2 FREQ. RANGE MHz MODEL NO. • ISOLATION dB L M Typ.Min. 30 26 25 20 27 20 — — 1-200 100-600 0.01-20 1-200 35 30 35 35 25 30 35 30 30 31 ZFSCJ-2-1 ZFSCJ-2-2
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B66d
Abstract: B6650b
Text: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A4114 7F4 7A4 4 !459A$%E&525535 3'5 %E$%E55 %F ED)5*)+ 4 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/5%F)ED)5*)+55
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1232456773849AB732
4CDE457FC7A4
2F37F4
9AB732
4CDE457FC7A41
567897A94BC76DACEF4
5B65B
E25C5
0050BF/5D66
25FE5
B66d
B6650b
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sy 170
Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170
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N4001.
sy 170
SY 356
SY 360 05
sy 710
sy 360
Dioden SY 250
byx 21
SY 320
sy710
Halbleiterbauelemente DDR
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Untitled
Abstract: No abstract text available
Text: S I L I C . Q N SMALL CASKS: HIGH D I O D E S _ f f f l f T filfjifs / i iQ ljl v i 5j l i I S f i l S .A . SIGNAL,REFERENCES,MICROWAVE DO-35_ DO- 4 1_ F -126 SPEED SWITCHING DI ODES
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DO-35_
DO-35
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P6KE150A
Abstract: SMBJ130A SMBJ170A SMBJ120A
Text: Transient Voltage Suppressors Part ¿lumber TVS SMBG110 SMBG110A SMBJ110 SMBJ110A P6KE130A SMBG120 SMBG120A SMBJ120 SMBJ120A P6KE150 P6KE150A P6KE160 SMBG130 SMBG130A SMBJ130 SMBJ130A P6KE160A P6KE170 P6KE170A P6KE180 SMBG150 SMBG150A SMBJ150 SMBJ150A P6KE180A
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10/10O0usec,
TVS-36
P6KE150A
SMBJ130A
SMBJ170A
SMBJ120A
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MRF24XA
Abstract: PCB Antenna matching carrier frequency offset estimation
Text: MRF24XA Low-Power, 2.4 GHz ISM-Band IEEE 802.15.4 RF Transceiver with Extended Proprietary Features Features Low-Power • IEEE 802.15.4™-2003 and IEEE 802.15.4-2006 Standard Compliant RF transceiver • Multiple air data rates: - 250 kbps IEEE 802.15.4
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MRF24XA
4TM-2003
DS70005023B-page
MRF24XA
PCB Antenna matching
carrier frequency offset estimation
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28F256L18
Abstract: S29WS256N intel MLC flash
Text: Spansion S29WS256N vs. Intel 28F256L18 Application Note The S29WS256N is a 256 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory which is manufactured on MirrorBit Technology. The scope of this document is to compare Spansion S29WS256N with Intel
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S29WS256N
28F256L18
28F256L18.
S29WS256N
28F256L18
intel MLC flash
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ba3920
Abstract: BA 3922 BA3928 BA3930 9702FS 9329l BA3922 ba 243 rf 4S584 LZ 99
Text: IUHDU I l ZLV ZLl 8dOS/8dia BdOS ° 4 - —V Wl 951 —V ¥ P09fr 8SM-dOS 8Sdia (P00e)«dl0->IS £. _ ± <, 0\/ 0z zv 9£ 9‘0 9‘0 (A) mmm* (A) i/ a m # 9 6* 96> 9 9 (AlBfcCf m (A) 9 001 8 x >18 OV 9 001 8 x >12 (VUi)&^ia (A) 3 ra & * (su)xbw 01 (V '0 # a » £
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P09fr
TI0L-dVS939Ha
093J8
3x29x15
2x29x15
32X29X15
6149LS
6161N
BA9700A/AF
9702FS
ba3920
BA 3922
BA3928
BA3930
9329l
BA3922
ba 243 rf
4S584
LZ 99
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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NPN C1685
Abstract: C1685 transistor
Text: EO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 PACKAGE DIMENSIONS DESCRIPTION Æ db tft The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
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E90700
NPN C1685
C1685 transistor
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IEC61000-4-4
Abstract: MIL-PRF19500 UMA100A UMA12A UMA170CA UMA24A UMA51A
Text: UMA5.0A thru UMA170CA ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V SCOTTSDALE DIVISION PACKAGE BA package outlines except with a much lower profile height. Its robust configuration in a “2010” style MELF package prevents damage to extendedlead terminals and virtually eliminates inductive parasitics from fast rise-time
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UMA170CA
IEC61000-4-2
IEC61000-4-4.
IEC61000-4-4
MIL-PRF19500
UMA100A
UMA12A
UMA170CA
UMA24A
UMA51A
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do-214ac footprint
Abstract: IEC61000-4-4 MIL-PRF19500 UMA100A UMA12A UMA170CA UMA24A UMA51A BA 567
Text: UMA5.0A thru UMA170CA ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V SCOTTSDALE DIVISION PACKAGE BA package outlines except with a much lower profile height. Its robust configuration in a “2010” style MELF package prevents damage to extendedlead terminals and virtually eliminates inductive parasitics from fast rise-time
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UMA170CA
IEC61000-4-2
IEC61000-4-4.
do-214ac footprint
IEC61000-4-4
MIL-PRF19500
UMA100A
UMA12A
UMA170CA
UMA24A
UMA51A
BA 567
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Untitled
Abstract: No abstract text available
Text: 244pin DDR3L SDRAM ULP Mini UDIMM DDR3L SDRAM Unbuffered ULP Mini-DIMMs Based on 4Gb A-Die HMT451M7AFR8A *SK hynix reserves the right to change products or specifications without notice. Rev. 0.1 / Oct. 2012 1 Revision History Revision No. History Draft Date
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244pin
HMT451M7AFR8A
72bit-wide,
512Mx72
64Max
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5KE400A
Abstract: 5ke400 AN6277 1.5KE6A N6277A 5KE300A 1.5KE*CA 5KE-400 5ke220a N6303A
Text: M¡erosemi Corp. diOClP P xp p rf. SCOTTSDALE, AZ F o r m o r e i n f o r m a ti o n call: 602 941-6300 FEATU R ES • EC O N O M IC A L • 1500 W ATTS P EA K P U L S E PO W ER DISSIPATION • STA N D O FF VOLTAGES FR O M 5.5V - 171V • U N IPO LAR OR DIPOLAR
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1N6267
1N6303A
5KE400A
5KE400A
5ke400
AN6277
1.5KE6A
N6277A
5KE300A
1.5KE*CA
5KE-400
5ke220a
N6303A
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f15a
Abstract: IEC61000-4-4 MIL-PRF19500 UMAF100A UMAF12A UMAF170CA UMAF24A UMAF51A UMAF54A
Text: UMAF5.0A thru UMAF170CA ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V SCOTTSDALE DIVISION ENVIRONMENTALLY LEAD-FREE PACKAGE BA package outlines except with a much lower profile height. Its robust configuration in a “2010” style MELF package prevents damage to extendedlead terminals and virtually eliminates inductive parasitics from fast rise-time
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UMAF170CA
IEC61000-4-2
IEC61000-4-4.
f15a
IEC61000-4-4
MIL-PRF19500
UMAF100A
UMAF12A
UMAF170CA
UMAF24A
UMAF51A
UMAF54A
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IEC61000-4-4
Abstract: MIL-PRF19500 UMAF100A UMAF12A UMAF170CA UMAF24A UMAF51A do-214ac footprint UltraMite UltraMite Package
Text: UMAF5.0A thru UMAF170CA ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V SCOTTSDALE DIVISION ENVIRONMENTALLY LEAD-FREE PACKAGE BA package outlines except with a much lower profile height. Its robust configuration in a “2010” style MELF package prevents damage to extendedlead terminals and virtually eliminates inductive parasitics from fast rise-time
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UMAF170CA
IEC61000-4-2
IEC61000-4-4.
IEC61000-4-4
MIL-PRF19500
UMAF100A
UMAF12A
UMAF170CA
UMAF24A
UMAF51A
do-214ac footprint
UltraMite
UltraMite Package
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