ABE 444
Abstract: n408 BA408 A96J 31A7
Text: ;~< @JTNJU \4JFVWTJU r@Md~ PU_\XMe 5 ,444 r6a`[ LQ^[ RaZO`U[Z MZP =[XP RaZO`U[Z r2EQSYQZ` ?:9 9U_\XMe r8M_Q _UfQ Ne 9>A _\QOURUOM`U[Z p >OJFUJ TJFI q1FWVNRQ KRT [RWT UFKJV[q NQ RSJTFVNRQ PFQWFO GJKRTJ WUNQLx \=TIJTNQL NQKRTPFVNRQ o BA QKHO ICOCM 2 BA ?ILCMC ICOCM
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45057QBA
533QBA/5t
ABE 444
n408
BA408
A96J
31A7
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AP2420
Abstract: 1302h C166 I2C PEC single byte software 1303H AP2424 C161PI C167 SAB-C161PI-LF SAB-C161PI-LM SAF-C161PI-LF
Text: Microcontroller Components Errata Sheet July 6, 2001 / Release 1.4 Device: SAB-C161PI-LM, SAF-C161PI-LM, SAB-C161PI-LM3V SAB-C161PI-LF, SAF-C161PI-LF SAB-C161PI-LF3V Stepping Code / Marking: Package: ES-AA, AA ES-BA-H, BA-H P-MQFP-100-2, P-TQFP-100-1 This Errata Sheet describes the deviations from the current user documentation. The
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SAB-C161PI-LM,
SAF-C161PI-LM,
SAB-C161PI-LM3V
SAB-C161PI-LF,
SAF-C161PI-LF
SAB-C161PI-LF3V
P-MQFP-100-2,
P-TQFP-100-1
C161PI
AP2420
1302h
C166 I2C PEC single byte software
1303H
AP2424
C167
SAB-C161PI-LF
SAB-C161PI-LM
SAF-C161PI-LF
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diode 1079
Abstract: medical application of laser semiconductor laser 1064 nm laser diode
Text: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-1064-08000-4020-CMT04-0000 General Product Information Product Application
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EYP-BAL-1064-08000-4020-CMT04-0000
diode 1079
medical application of laser
semiconductor laser
1064 nm laser diode
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Laser Diode 808 nm
Abstract: eyp-bal-0808 semiconductor laser
Text: Version 0.90 26.05.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-0808-08000-4020-CMT04-0000 General Product Information Product Application
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EYP-BAL-0808-08000-4020-CMT04-0000
Laser Diode 808 nm
eyp-bal-0808
semiconductor laser
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medical application of laser
Abstract: M4000 980 nm laser diode
Text: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-0980-08000-4020-CMT04-0000 General Product Information Product Application
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EYP-BAL-0980-08000-4020-CMT04-0000
medical application of laser
M4000
980 nm laser diode
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rectifier MIP 144
Abstract: CRITCHLEY 9004 smd transistor gz "Critchley Components" acer adapter circuit diagram hpx series Critchley bcy58 siemens PABX critchley label
Text: ICs for Communications Audio Ringing Codec Filter Basic Function ARCOFI -BA PSB 2161 Version 1.1 User’s Manual 11.97 PSB 2161 Revision History: Current Version: 1997-11-01 Previous Version: Preliminary Data Sheet 08.95 Page Page in previous (in current
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ITD09527
ITD09528
ITD09529
rectifier MIP 144
CRITCHLEY 9004
smd transistor gz
"Critchley Components"
acer adapter circuit diagram
hpx series
Critchley
bcy58
siemens PABX
critchley label
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stv9937
Abstract: STV9212 OSD microcontroller vga crt monitor
Text: STV9937 120-MHz On-Screen Display for Monitors including PictureBooSTTM and 4 True Independent Window Displays DATASHEET Main Features • Horizontal frequency up to 150 kHz ■ I²C interface for microcontrollers with slave address BA h in Read and Write modes
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STV9937
120-MHz
STV9937P/AA
stv9937
STV9212
OSD microcontroller vga crt monitor
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LUCENT DSP1610
Abstract: mip 4140 DSP1610 Simulator DSP1605 DSP1609 RMM2 user guide PT 10000 lucent DSP 312C0
Text: Information Manual June 1998 DSP1609 Digital Signal Processor For additional information, contact your Microelectronics Group Account Manager or the following: http://www.lucent.com/micro INTERNET: docmaster@micro.lucent.com E-MAIL: N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103
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DSP1609
30L-15P-BA,
DSP1609
LUCENT DSP1610
mip 4140
DSP1610 Simulator
DSP1605
RMM2 user guide
PT 10000
lucent DSP
312C0
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STV9212
Abstract: STV9937 aa496
Text: STV9937 120-MHz On-Screen Display for Monitors including PictureBooSTTM and 4 True Independent Window Displays DATASHEET Main Features • Horizontal frequency up to 150 kHz ■ I²C interface for microcontrollers with slave address BA h in Read and Write modes
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STV9937
120-MHz
STV9937P/AA
STV9212
STV9937
aa496
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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diode LZ. 02
Abstract: diode LZ. 58 BZX88 BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67
Text: MICROE SILICON PLANAR HIGH-SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature T yp e Description M ax. V RWM Volts BA W 63 BAW 63A BA W 63B B A W 64 B A W 65 BA W 66 BA W 67 BA W 68 Single diode Single diode Single diode C o m m on cathode diode pair
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BAW63
BAW63A
BAW63B
BAW64
BAW65
BAW66
BAW67
BAW68
maximu15
BZX88-C10
diode LZ. 02
diode LZ. 58
BZX88
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ba10g
Abstract: BA-10R1UD ba-10g1ud A M E 26
Text: BAR GRAPH & ARRAY Part No. Emitted C o m m on Size Xp nm A>. Peak Pd (nm ) (m w ) If(mA) Max. Iv Typ. Per Seg. (m cd ) 0.7 Vf(V) If(mA) Typ. D raw ing BA-10R1UD Red 655 40 110 40 200 1,7 2.0 BA-10H1UD Bright red 700 90 50 15 50 2.1 2.6 1.0 10 BA-10G1UD Green
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BA-10R1UD
BA-10H1UD
ba10g
ba-10g1ud
A M E 26
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IC 7447
Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222
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LT 5238
Abstract: BA6587K ba6587 CTD100 6587K
Text: * ROHM CO LTD 7856^ MOE Q0D4Q4fi 2 •RHM OA i i f l f f l I C / I C s for OA Applications BA 6587K, B A 6 5 8 8 K IJ , y -K H K , 3 0 7 = vT 2 -3 § FD D ffly-K /9 -f h R e a d / W rig h t Amplifier for FD D B A S 5 S 7 IC M H 5 7 P 7 f c i- f '- f BA 6587K /B A 6588K
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6587K
6588K
6587K,
BA6587K/BA6588K
T-52-38
100mA]
LT 5238
BA6587K
ba6587
CTD100
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73001AB
Abstract: rtt 10 foxboro foxboro 931 foxboro control valve drum ic cxa 2165 sis 486 LK15 75XXX-XX cdb 4121 e
Text: 73001BA-02 FOX 1 Hardware System Overview and Reference Manual VOLUME 2 COMPUTER REFERENCE MANUAL tOXBORO FOX 1 USER DOCUMENTATION 73001AA 73001AB 73001EA 73001EB 73001EC 73001 BA-02 Hardware System Overview and Reference Manual VOLUME 2 COMPUTER REFERENCE MANUAL
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73001BA-
73001AA
73001AB
73001BA-2
rtt 10 foxboro
foxboro 931
foxboro control valve
drum ic
cxa 2165
sis 486
LK15
75XXX-XX
cdb 4121 e
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V20w
Abstract: goc1
Text: BAV20 / BAV21 SWITCHING DIODE Features Glass Package for High Reliability Planar Die Construction Low Reverse Leakage Current Also available in Surface Mount Package BA V20W and BAV21W T D DO-35 Mechanical Data_ • • • • Case: D O -35, Glass
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BAV20
BAV21
BAV21W
DO-35
IL-STD-202,
BAV21
DS22006
V20w
goc1
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1N5628
Abstract: 1N5826
Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5826 and 1N5628 are Motorola Preferred Devices Designer’s Data Sheet Pow er R ectifiers SCHOTTKY BA R R IE R RECTIFIERS . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5826
1N5827
1N5828
1N5628
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toshiba e35
Abstract: jalr TX39 R3000A cpo registers KERNEL MIPS R3000A
Text: TOSHI BA Architecture ^ mscm Chapter 1 Introduction 1.1 Features The TX39/H2 Processor Core is a high-performance 32-bit microprocessor core developed by Toshiba based on the R3000A RISC Reduced Instruction Set Computer microprocessor. The R3000A was developed by MIPS Technologies, Inc.
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TX39/H2
32-bit
R3000A
toshiba e35
jalr
TX39
cpo registers
KERNEL
MIPS R3000A
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HS350
Abstract: No abstract text available
Text: DATA SHEET CEL GaAs INTEGRATED CIRCUIT «PG2030TK L, S-BAND SPDT SWITCH <R> DESCRIPTION T h e ^P G 2 0 3 0 T K is a G aA s M M IC L, S -ba nd S P D T S in g le Pole Double T hrow sw itch fo r m ob ile phone and o th e r L, S -ba nd applications. T h is de vice can o p era te w ith dual control volta ge s from 2.7 to 5.3 V, at fre q u e n cie s from 0.5 to 2.5 G Hz, with
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PG2030TK
PG2030TK
HS350
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V2325FF-7 TOSHI BA MOS DI GI TAL I NTEGRATED CI RCUI T SILICON GATE CMOS 65,536-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V2325FF is a 2,097,152-bit synchronous pipelined burst static random access memory SRAM
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TC55V2325FF-7
TC55V2325FF
152-bit
LQFP100-P-1420-0
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IN3881
Abstract: fmx 1912 TI-1201 12FL 16FL 1N3879 1N3889 1N3893 L60S10 k 1452
Text: Data Sheet No. PD-2.030D INTERNATIONAL RECTIFIER I R 1N3879, 1IM388S, GFL, 1SFL, 16FL SERIES BA, 12A and 16A Past Recovery Rectifiers Description Major Ratings and Characteristics 1N3879 —1N3883 IN 3889 -1N3893 16FL. Unit 6* 12* 6 12 16 A 50Hz 72 145
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1N3B79,
1IM38BS,
N3879
-1N3893
1N3889
M3883I
IN3881
fmx 1912
TI-1201
12FL
16FL
1N3879
1N3893
L60S10
k 1452
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BAV21
Abstract: BAV20 J BAV21 0822006 BAV20W BAV21W
Text: 3IÌB5 BAV20 / BAV21 SWITCHING DIODE LITEMZI POWER SEMICONDUCTOR y Features • • • • Glass Package for High Reliability Planar Die Construction Low Reverse Leakage Current Also available in Surface Mount Package BA V20W and BAV21W T c D DO-35 Mechanical Data_
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BAV20
BAV21
BAV20W
BAV21W)
DO-35,
MIL-STD-202,
DO-35
BAV21
J BAV21
0822006
BAV21W
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BA N D 2ND BAND BLACK BLACK BROWN BLACK BLACK BROWN BLACK BROWN BROWN G RAY BLACK RED WHITE BROWN
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914/A/B
916/A/B
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
FDLL4148
FDLL4448
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BA176
Abstract: DIODE B2 51A-2 diode 12 kv aerial 2J26
Text: KEN BA 176 'W Silizium-Diode Silicon diode Anwendungen : Antennenschutzdiode Applications: Aerial protection Abmessungen in mm Dimensions in mm Normgehäuse Case - 7, 2 - 5 1 A 2 DIN 4 1 880 JEDEC DO 7 Gewicht • Weight max. 0,2 g Kenngrößen Min. Typ. Max.
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