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    BA256 Search Results

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    BA256 Price and Stock

    Micron Technology Inc MTFDKBA256TGE-1BL1AABYY

    2550 256GB M.2 SSD
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    DigiKey MTFDKBA256TGE-1BL1AABYY Tray 8 1
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    Avnet Americas MTFDKBA256TGE-1BL1AABYY Tray 10 20 Weeks 180
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    Mouser Electronics MTFDKBA256TGE-1BL1AABYY 140
    • 1 $57.49
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    Newark MTFDKBA256TGE-1BL1AABYY Bulk 10
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    Avnet Silica MTFDKBA256TGE-1BL1AABYY 27 Weeks 180
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    Lattice Semiconductor Corporation OR3T556BA256-DB

    IC FPGA 223 I/O 256BGA
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    DigiKey OR3T556BA256-DB Tray
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    Rochester Electronics LLC OR2C10A4BA256-DB

    FPGA, 256 CLBS, 12300 GATES
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    DigiKey OR2C10A4BA256-DB Bulk 11
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    Rochester Electronics LLC OR2T15B7BA256-DB

    FPGA, 400 CLBS, 19200 GATES
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    DigiKey OR2T15B7BA256-DB Bulk 12
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    Rochester Electronics LLC OR2C12A4BA256-DB

    FPGA, 324 CLBS, 15600 GATES
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    DigiKey OR2C12A4BA256-DB Bulk 10
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    BA256 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief February 1999 ORCA OR3TP12 Field-Programmable System Chip FPSC Embedded Master/Target PCI Bus Interface Introduction The Lucent Technologies Microelectronics Group has developed a solution for designers who need the many advantages of an FPGA-based design implementation, coupled with the high bandwidth of an


    Original     		OR3TP12 32-bit 32-bit PN99-047FPGA PN98-054FPGA) PDF

    OR2C12A

    Abstract: ps304 S208 ATT2C
    Text: Product Brief January 2002 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology


    Original     		16-bit 32-bit 100-Pin 144-Pin 160-Pin 256-Pin BA256 304-Pin S304/ PS304 OR2C12A ps304 S208 ATT2C PDF

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB PDF

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204 PDF

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175 PDF

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh PDF

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65 PDF

    IC TTL 7495 diagram and truth table

    Abstract: BA 5979 S AM 5766 BA 5979 motorola s240 pin diagram of ic 7495 Xilinx counter transistor on 4409 PR25D inverter design using plc
    Text: Data Sheet June 1999 ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, 0.35 µm OR3C and 0.3 µm (OR3T) 4-level metal technology, (4- or 5-input look-up table delay of 1.1 ns with -7 speed grade in


    Original     		DS99-087FPGA DS98-163FPGA-01) IC TTL 7495 diagram and truth table BA 5979 S AM 5766 BA 5979 motorola s240 pin diagram of ic 7495 Xilinx counter transistor on 4409 PR25D inverter design using plc PDF

    lowpass filter 10khz

    Abstract: p28 smd 11K-99K BA432 FE68 4000B POWR1208 lattice 22v10 programming lvds vhdl M132
    Text: H I G H P E R F O R M A N C E P R O G R A M M A B L E S O L U T I O N S Lattice Military/Aerospace Solutions Proven Programmable Technology Today’s military and aerospace systems designers have to satisfy multiple and often competing system objectives. Designers must balance issues such as system security, low


    Original     		1-800-LATTICE I0163A lowpass filter 10khz p28 smd 11K-99K BA432 FE68 4000B POWR1208 lattice 22v10 programming lvds vhdl M132 PDF

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash PDF

    TC58FVM7B5BTG65

    Abstract: TC58FVM7t5BTG65 BK-10 HA145
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145 PDF

    BA254

    Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
    Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features


    Original     		TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT PDF

    63D34

    Abstract: No abstract text available
    Text: 123456789AB89C5DEF6 695CA895C 19C8789A  8985CA   4!"4D1# 17 1234546789A8BC728DEF 25472888A8DEF  F3 !"# 1"!$FB5$%F3B9D7&936B62 1


    Original     		123456789AB89C5DEF 1234546789A8BC728DEF 12234567893A758BCD834E3F2 367D3 367D37D* D7D83 D73A758BC 6E34D3 D7936 934D25 63D34 PDF

    BA142

    Abstract: No abstract text available
    Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142 PDF

    Untitled

    Abstract: No abstract text available
    Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR


    Original     		K8C54 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H PDF

    BA188

    Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
    Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K8S5615ETC 256Mb 44FBGA, no180000h-018FFFFh 0170000h-017FFFFh 0160000h-016FFFFh 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh BA188 BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213 PDF

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379 PDF

    Untitled

    Abstract: No abstract text available
    Text: microelectronics Product Brief February 1999 group Lucent Technologies Bell Labs Innovations ORCA OR3TP12 Field-Programmable System Chip FPSC Embedded Master/Target PCI Bus Interface Introduction • PCI SIG Hot Plug (R1.0) compliant. The Lucent Technologies Microelectronics Group has


    OCR Scan     		OR3TP12 OR3TP12, 32-/64-bit PN99-047FPGA PN98-054FPGA) PDF

    tic 2250

    Abstract: 2c14r ap13 eam
    Text: Preliminary Data Sheet May 1998 m icroelectronics group Lucent Technologies Bell Labs Innovations ORCA 0R3Cxx 5 V and 0R3Txxx (3.3 V) Series Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 4-level metal technology, with a migration plan to 0.25


    OCR Scan     		16-bit two58) DS98-163FPGA DS97-282FPGA) tic 2250 2c14r ap13 eam PDF

    circuit diagram of MOD 100 counter using ic 7490

    Abstract: RSC14 plcf circuit diagram of MOD 8 counter using ic 7490 R14C11
    Text: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input


    OCR Scan     		DS99-087FPGA DS98-163FPGA-01) circuit diagram of MOD 100 counter using ic 7490 RSC14 plcf circuit diagram of MOD 8 counter using ic 7490 R14C11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input


    OCR Scan     		GD3T75fci PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet microelectronics group June 1999 Lucent Technologies Bell Labs Innovations ORCA Series 2 Field-Programmable Gate Arrays Features • High-performance, cost-effective, low-power 0.35 pm CMOS technology OR2CxxA , 0.3 pm CMOS technology (OR2TxxA), and 0.25 pm CMOS technology


    OCR Scan     		16-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet August 1996 microelectronics group Lucent Technologies Bell Labs Innovations ORCA OR2CxxA 5.0 V and OR2TxxA (3.3 V) Series Field-Programmable Gate Arrays Features • Flip-flop/latch options to allow programmable prior­ ity of synchronous set/reset vs. clock enable


    OCR Scan     		DS96-140FPG DS96-025FPGA) QQS110B PDF